StrongIRFET™
IRFB7740PbF
HEXFET® Power MOSFET
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
D
7.3m
87A
S
D
TO-220AB
IRFB7740PbF
D
Drain
Standard Pack
Form
Quantity
Tube
50
S
Source
Orderable Part Number
IRFB7740PbF
100
30
ID = 52A
25
80
20
15
TJ = 125°C
10
5
0
8
12
16
20
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
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60
40
20
TJ = 25°C
4
1
max
G
ID , Drain Current (A)
( )
RDS(on), Drain-to -Source On Resistance m
TO-220
6.0m
ID
G
Gate
IRFB7740PbF
RDS(on) typ.
S
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
Package Type
75V
G
Base part number
VDSS
© 2015 International Rectifier
0
25
50
75
100
125
150
175
TC , CaseTemperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
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IRFB7740PbF
Absolute Maximum Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Parameter
Max.
Continuous Drain Current, VGS @ 10V
87
Continuous Drain Current, VGS @ 10V
62
Pulsed Drain Current
275
Maximum Power Dissipation
143
Linear Derating Factor
0.95
VGS
Gate-to-Source Voltage
± 20
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
160
EAS (Thermally limited)
Single Pulse Avalanche Energy
241
EAS (Thermally limited)
Single Pulse Avalanche Energy
IAR
Avalanche Current
See Fig. 15, 16, 23a, 23b
Repetitive Avalanche Energy
EAR
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Junction-to-Case
RJC
–––
1.05
Case-to-Sink, Flat Greased Surface
RCS
0.50
–––
Junction-to-Ambient
RJA
–––
62
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
RG
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
75
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Units
A
W
W/°C
V
°C
mJ
A
mJ
Units
°C/W
Typ. Max. Units
Conditions
––– –––
V VGS = 0V, ID = 250µA
0.05 ––– V/°C Reference to 25°C, ID = 1mA
6.0
7.3 m VGS = 10V, ID = 52A
7.1
–––
VGS = 6.0V, ID = 26A
–––
3.7
V VDS = VGS, ID = 100µA
–––
1.0
VDS =75 V, VGS = 0V
µA
––– 150
VDS =75V,VGS = 0V,TJ =125°C
––– 100
VGS = 20V
nA
––– -100
VGS = -20V
2.0
–––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.117mH, RG = 50, IAS = 52A, VGS =10V.
ISD 52A, di/dt 503A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
R is measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 22A, VGS =10V.
2
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IRFB7740PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Min.
167
–––
–––
–––
–––
–––
–––
Typ.
–––
81
21
27
54
12
60
td(off)
Turn-Off Delay Time
–––
55
tf
Ciss
Coss
Crss
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
–––
–––
–––
–––
45
4650
370
240
–––
330
–––
VGS = 0V, VDS = 0V to 60V
–––
425
–––
VGS = 0V, VDS = 0V to 60V
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max. Units
–––
–––
87
–––
–––
275
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
dv/dt
Peak Diode Recovery dv/dt
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
–––
–––
–––
–––
–––
–––
10
41
51
46
62
2.3
–––
–––
–––
–––
–––
–––
Coss eff.(ER)
Coss eff.(TR)
Max. Units
Conditions
–––
S VDS = 10V, ID =52A
122
ID = 52A
–––
VDS = 38V
nC
–––
VGS = 10V
–––
–––
VDD = 38V
–––
ID = 52A
ns
–––
RG= 2.7
VGS = 10V
–––
–––
–––
–––
pF
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig.7
Diode Characteristics
Symbol
IS
ISM
3
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A
V
D
G
S
TJ = 25°C,IS = 52A,VGS = 0V
V/ns TJ = 175°C,IS =52A,VDS = 75V
TJ = 25°C
VDD = 64V
ns
TJ = 125°C
IF = 52A,
TJ = 25°C di/dt = 100A/µs
nC
TJ = 125°C
A TJ = 25°C
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IRFB7740PbF
1000
1000
100
BOTTOM
10
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.8V
4.5V
4.5V
BOTTOM
100
4.5V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 175°C
1
10
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
2.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
VDS = 25V
ID, Drain-to-Source Current (A)
100
Fig 4. Typical Output Characteristics
1000
60µs PULSE WIDTH
100
TJ = 175°C
10
TJ = 25°C
1
0.1
2.0
3.0
4.0
5.0
ID = 52A
VGS = 10V
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
6.0
-60 -40 -20
VGS, Gate-to-Source Voltage (V)
100000
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 5. Typical Transfer Characteristics
Fig 6. Normalized On-Resistance vs. Temperature
14
VGS = 0V,
f = 1 MHZ
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
10
VDS, Drain-to-Source Voltage (V)
Fig 3. Typical Output Characteristics
C oss = C ds + C gd
10000
Ciss
1000
Coss
Crss
ID= 52A
12
VDS= 60V
VDS= 38V
VDS= 15V
10
8
6
4
2
0
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
4
1
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0
10 20 30 40 50 60 70 80 90 100
QG Total Gate Charge (nC)
Fig 8. Typical Gate Charge vs.
Gate-to-Source Voltage
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IRFB7740PbF
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
TJ = 175°C
100
10
TJ = 25°C
1
10msec
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
DC
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1.4
1
10
VDS, Drain-toSource Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
0.8
95
Id = 1.0mA
0.6
90
Energy (µJ)
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
100µsec
1msec
100
85
0.4
0.2
80
0.0
75
0
-60 -40 -20 0 20 40 60 80 100120140160180
40
60
80
VDS, Drain-to-Source Voltage (V)
TJ , Temperature ( °C )
Fig 11. Drain-to-Source Breakdown Voltage
( )
RDS(on), Drain-to -Source On Resistance m
20
Fig 12. Typical Coss Stored Energy
20.0
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
16.0
VGS = 8.0V
VGS = 10V
12.0
8.0
4.0
0
50
100
150
200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5
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IRFB7740PbF
Thermal Response ( ZthJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C. (Single Pulse)
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width
160
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 52A
EAR , Avalanche Energy (mJ)
140
120
100
80
60
40
20
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
6
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Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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IRFB7740PbF
16
IF = 36A
VR = 64V
TJ = 25°C
TJ = 125°C
12
3.0
ID = 100µA
ID = 1.0mA
2.0
IRRM (A)
VGS(th) Gate threshold Voltage (V)
4.0
ID = 1.0A
1.0
8
4
0.0
-60 -40 -20
0
0
20 40 60 80 100 120 140 160 180
0
200
TJ , Temperature ( °C )
600
800
1000
diF /dt (A/µs)
Fig 18. Typical Recovery Current vs. dif/dt
Fig 17. Threshold Voltage vs. Temperature
16
280
IF = 52A
VR = 64V
240
IF = 36A
VR = 64V
TJ = 25°C
TJ = 125°C
200
TJ = 25°C
TJ = 125°C
QRR (nC)
12
IRRM (A)
400
8
160
120
80
4
40
0
0
0
200
400
600
800
1000
0
200
diF /dt (A/µs)
400
600
800
1000
diF /dt (A/µs)
Fig 19. Typical Recovery Current vs. dif/dt
Fig 20. Typical Stored Charge vs. dif/dt
QRR (nC)
280
240
IF = 52A
VR = 64V
200
TJ = 25°C
TJ = 125°C
160
120
80
40
0
0
200
400
600
800
1000
diF /dt (A/µs)
Fig 21. Typical Stored Charge vs. dif/dt
7
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IRFB7740PbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T
RG
IAS
20V
tp
+
V
- DD
A
I AS
0.01
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1 Qgs2
Fig 25a. Gate Charge Test Circuit
8
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Qgd
Qgodr
Fig 25b. Gate Charge Waveform
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IRFB7740PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
EXAM PLE:
T H IS IS A N IR F 1 0 1 0
LO T C O D E 1789
ASSEM BLED O N W W 19, 2000
IN T H E A S S E M B L Y L IN E "C "
N o t e : "P " in a s s e m b ly lin e p o s it io n
in d ic a t e s "L e a d - F r e e "
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
ASSEM BLY
LO T C O D E
PART NUM BER
D ATE C O D E
YEA R 0 = 2000
W EEK 19
L IN E C
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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IRFB7740PbF
Qualification Information†
Industrial
Qualification Level
(per JEDEC JESD47F) ††
Moisture Sensitivity Level
TO-220
N/A
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comment
8/29/2014
Updated latest package outline on page 9.
03/05/2015
Updated EAS (L =1mH) = 241mJ on page 2
Updated note 8 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 22A, VGS =10V” on page 2
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
10
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