IRFB7746PBF

StrongIRFET™ IRFB7746PbF HEXFET® Power MOSFET Application  Brushed motor drive applications  BLDC motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC inverters   10.6m 59A TO-220AB D Drain Standard Pack Form Quantity Tube 50 S Source Orderable Part Number IRFB7746PbF 60 25 ID = 35A 50 20 T J = 125°C 15 10 40 30 20 10 T J = 25°C 0 5 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 max S D G ID, Drain Current (A) RDS(on), Drain-to -Source On Resistance (m ) TO-220 9.0m ID G Gate IRFB7746PbF RDS(on) typ. S Benefits Improved gate, avalanche and dynamic dV/dt ruggedness Fully characterized capacitance and avalanche SOA Enhanced body diode dV/dt and dI/dt capability Lead-free, RoHS compliant Halogen-free Package Type 75V G      Base part number VDSS D www.irf.com © 2014 International Rectifier 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback November 7, 2014 IRFB7746PbF   Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Parameter Max. Continuous Drain Current, VGS @ 10V 59 Continuous Drain Current, VGS @ 10V 42   Pulsed Drain Current  219 Maximum Power Dissipation 99 Linear Derating Factor 0.66 VGS Gate-to-Source Voltage ± 20 TJ Operating Junction and -55 to + 175   TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)   Avalanche Characteristics  Symbol Max. Parameter 111 EAS (Thermally limited) Single Pulse Avalanche Energy  EAS (Thermally limited) 154   Single Pulse Avalanche Energy  IAR Avalanche Current  See Fig 15, 16, 23a, 23b Repetitive Avalanche Energy  EAR Thermal Resistance   Symbol Parameter Typ. Max. Junction-to-Case  RJC ––– 1.52 Case-to-Sink, Flat Greased Surface RCS 0.50 ––– Junction-to-Ambient  RJA ––– 62 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS RG Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance Min. 75 ––– ––– ––– 2.1 ––– ––– ––– ––– ––– Units A W W/°C V °C   Units mJ A mJ Units °C/W   Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 0.06 ––– V/°C Reference to 25°C, ID = 1mA 9.0 10.6 m VGS = 10V, ID = 35A  10.4 –––  VGS = 6.0V, ID = 18A  ––– 3.7 V VDS = VGS, ID = 100µA ––– 1.0 VDS =75 V, VGS = 0V µA ––– 150 VDS =75V,VGS = 0V,TJ =125°C ––– 100 VGS = 20V nA ––– -100 VGS = -20V 1.6 –––  Notes: Repetitive rating; pulse width limited by max. junction temperature.  Limited by TJmax, starting TJ = 25°C, L = 170µH, RG = 50, IAS = 35A, VGS =10V. ISD  35A, di/dt  432A/µs, VDD  V(BR)DSS, TJ 175°C. Pulse width  400µs; duty cycle  2%.  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.  R is measured at TJ approximately 90°C.  Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 18A, VGS =10V. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 IRFB7746PbF   Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg – Qgd) Turn-On Delay Time Rise Time Min. 132 ––– ––– ––– ––– ––– ––– Typ. ––– 55 12 16 39 9.9 36 td(off) Turn-Off Delay Time ––– 33 tf Ciss Coss Crss Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) ––– ––– ––– ––– 30 3049 255 150 ––– 236 ––– ––– 300 ––– VGS = 0V, VDS = 0V to 60V Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– 59 ––– ––– 219 Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 dv/dt Peak Diode Recovery dv/dt trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ––– ––– ––– ––– ––– ––– 8.0 28 33 30 42 1.8 ––– ––– ––– ––– ––– ––– Coss eff.(ER) Coss eff.(TR) Effective Output Capacitance (Time Related) Max. Units Conditions ––– S VDS = 10V, ID = 35A 83 ID = 35A ––– VDS = 38V nC   ––– VGS = 10V ––– ––– VDD = 38V ––– ID = 35A ns ––– RG= 2.7 VGS = 10V  ––– ––– ––– ––– VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 7 pF   VGS = 0V, VDS = 0V to 60V Diode Characteristics   Symbol IS ISM 3 www.irf.com © 2014 International Rectifier A V D G S TJ = 25°C,IS = 35A,VGS = 0V  V/ns TJ = 175°C,IS = 35A,VDS = 75V TJ = 25°C VDD = 64V ns TJ = 125°C IF = 35A, TJ = 25°C di/dt = 100A/µs  nC TJ = 125°C   A TJ = 25°C  Submit Datasheet Feedback November 7, 2014 IRFB7746PbF   1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 7.0V 6.0V 5.5V 5.0V 4.5V 4.0V 100 10 1 4.0V BOTTOM 10 4.0V 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 175°C Tj = 25°C 0.1 1 0.1 1 10 100 1000 0.1 1 V DS, Drain-to-Source Voltage (V) 1000 2.6 100 TJ = 175°C 10 TJ = 25°C 1 V DS = 25V 60µs PULSE WIDTH RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 100 Fig 4. Typical Output Characteristics 1000 2.4 2.2 ID = 35A V GS = 10V 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.1 2.0 3.0 4.0 5.0 6.0 -60 -40 -20 0 20 40 60 80 100120140160180 7.0 TJ , Junction Temperature (°C) V GS, Gate-to-Source Voltage (V) Fig 6. Normalized On-Resistance vs. Temperature Fig 5. Typical Transfer Characteristics 100000 14.0 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd V GS, Gate-to-Source Voltage (V) ID= 35A Coss = Cds + Cgd C, Capacitance (pF) 10 V DS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics 10000 Ciss 1000 Coss Crss 12.0 V DS= 60V V DS= 38V 10.0 V DS= 15V 8.0 6.0 4.0 2.0 0.0 100 1 10 100 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage 4 VGS 15V 10V 7.0V 6.0V 5.5V 5.0V 4.0V 4.0V www.irf.com © 2014 International Rectifier 0 10 20 30 40 50 60 70 QG, Total Gate Charge (nC) Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback November 7, 2014 IRFB7746PbF   1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 TJ = 175°C 100 TJ = 25°C 10 10 OPERATION IN THIS AREA LIMITED BY RDS(on) 1 10msec DC 0.1 Tc = 25°C Tj = 175°C Single Pulse V GS = 0V 1.0 0.01 0.2 0.6 1.0 1.4 0.1 1 V SD, Source-to-Drain Voltage (V) 10 VDS, Drain-to-Source Voltage (V) Fig 10. Maximum Safe Operating Area Fig 9. Typical Source-Drain Diode Forward Voltage 0.6 95 Id = 1.0mA 0.5 90 0.4 Energy (µJ) V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 100µsec 1msec 85 0.3 0.2 80 0.1 0.0 75 -10 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Temperature ( °C ) 0 10 20 30 40 50 60 70 80 VDS, Drain-to-Source Voltage (V) RDS(on), Drain-to -Source On Resistance ( m) Fig 11. Drain-to-Source Breakdown Voltage Fig 12. Typical Coss Stored Energy 60 50 Vgs = 5.5V Vgs = 6.0V Vgs = 7.0V Vgs = 8.0V Vgs = 10V 40 30 20 10 0 0 20 40 60 80 100 120 140 160 180 200 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 IRFB7746PbF   Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case Avalanche Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125°C and Tstart = 25°C (Single Pulse) 100 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 125°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Avalanche Current vs. Pulse Width EAR , Avalanche Energy (mJ) 120 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 35A 100 80 60 40 20 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature 6 www.irf.com © 2014 International Rectifier Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav   Submit Datasheet Feedback November 7, 2014 IRFB7746PbF 4.0 14 3.5 12 3.0 10 2.5 2.0 ID = 100µA ID = 250µA 1.5 ID = 1.0mA ID = 1.0A IRRM (A) V GS(th) , Gate threshold Voltage (V)   IF = 24A V R = 64V TJ = 25°C TJ = 125°C 8 6 4 1.0 2 0.5 0 -75 -50 -25 0 25 50 75 100 125 150 175 0 200 TJ , Temperature ( °C ) 600 800 1000 diF /dt (A/µs) Fig 18. Typical Recovery Current vs. dif/dt Fig 17. Threshold Voltage vs. Temperature 16 250 IF = 35A V R = 64V 14 TJ = 125°C QRR (nC) 10 IF = 24A V R = 64V TJ = 25°C 200 TJ = 25°C TJ = 125°C 12 IRRM (A) 400 8 6 4 150 100 50 2 0 0 0 200 400 600 800 1000 0 200 diF /dt (A/µs) 400 600 800 1000 diF /dt (A/µs) Fig 19. Typical Recovery Current vs. dif/dt Fig 20. Typical Stored Charge vs. dif/dt QRR (nC) 300 250 IF = 35A V R = 64V TJ = 25°C 200 TJ = 125°C 150 100 50 0 0 200 400 600 800 1000 diF /dt (A/µs) Fig 21. Typical Stored Charge vs. dif/dt 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 IRFB7746PbF   Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V DRIVER L VDS D.U.T RG IAS 20V tp + V - DD A 0.01 I AS Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Id Vds Vgs VDD  Vgs(th) Qgs1 Qgs2 Fig 25a. Gate Charge Test Circuit 8 www.irf.com © 2014 International Rectifier Qgd Qgodr Fig 25b. Gate Charge Waveform Submit Datasheet Feedback November 7, 2014 IRFB7746PbF   TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information EXAM PLE: T H IS IS A N IR F 1 0 1 0 LO T C O D E 1789 ASSEM BLED O N W W 19, 2000 IN T H E A S S E M B L Y L IN E "C " N o t e : "P " in a s s e m b ly lin e p o s it io n in d ic a t e s "L e a d - F r e e " IN T E R N A T IO N A L R E C T IF IE R LO G O ASSEM BLY LO T C O D E PART NUM BER D ATE C O D E YEA R 0 = 2000 W EEK 19 L IN E C TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 IRFB7746PbF   Qualification Information†   Industrial (per JEDEC JESD47F) †† Qualification Level   Moisture Sensitivity Level TO-220 N/A RoHS Compliant Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date 11/7/2014 Comments     Updated EAS (L =1mH) = 154mJ on page 2 Updated note 8 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 18A, VGS =10V” on page 2 Added “Halogen– Free” to the benefits on page1 Updated package outline on page 9. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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