IRFB7787PBF

StrongIRFET™ IRFB7787PbF IRFS7787PbF IRFSL7787PbF HEXFET® Power MOSFET Application  Brushed Motor drive applications  BLDC Motor drive applications  Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters D VDSS 75V RDS(on) typ. 6.9m max 8.4m G S ID 76A D D Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant S D G S G TO-220AB IRFB7787PbF D2Pak IRFS7787PbF G Gate Package Type IRFB7787PbF IRFSL7787PbF TO-220 TO-262 IRFS7787PbF D2-Pak 40 S Source Orderable Part Number IRFB7787PbF IRFSL7787PbF IRFS7787PbF IRFS7787TRLPbF 80 ID = 46A 30 20 TJ = 125°C 10 60 40 20 TJ = 25°C 0 4 8 12 16 20 VGS, Gate-to-Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 S D TO-262 IRFSL7787PbF D Drain Standard Pack Form Quantity Tube 50 Tube 50 Tube 50 Tape and Reel Left 800 ID , Drain Current (A) RDS(on), Drain-to -Source On Resistance ( m) Base part number G www.irf.com © 2015 International Rectifier 0 25 50 75 100 125 150 175 TC , CaseTemperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback April 22, 2015 IRFB/S/SL7787PbF Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting Torque, 6-32 or M3 Screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy  EAS (Thermally limited) Single Pulse Avalanche Energy  IAR Avalanche Current  EAR Repetitive Avalanche Energy  Thermal Resistance Symbol Parameter Junction-to-Case  RJC Case-to-Sink, Flat Greased Surface RCS Junction-to-Ambient  RJA Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS RG Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance Max. 76 54 280 125 0.83 ± 20 A W W/°C V -55 to + 175 °C 300 10 lbf·in (1.1 N·m) 144 209 mJ See Fig 15, 16, 23a, 23b A mJ Typ. ––– 0.50 ––– Min. 75 ––– ––– ––– 2.1 ––– ––– ––– ––– ––– Units Max. 1.2 ––– 62 Units °C/W Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 0.06 ––– V/°C Reference to 25°C, ID = 1mA  6.9 8.4 m VGS = 10V, ID = 46A 8.2 ––– VGS = 6.0V, ID = 23A ––– 3.7 V VDS = VGS, ID = 100µA ––– 1.0 VDS = 75 V, VGS = 0V µA ––– 150 VDS = 75V,VGS = 0V,TJ =125°C ––– 100 VGS = 20V nA ––– -100 VGS = -20V 2.1 –––  Notes:  Repetitive rating; pulse width limited by max. junction temperature.  Limited by TJmax, starting TJ = 25°C, L = 0.138mH, RG = 50, IAS = 46A, VGS =10V.  ISD  46A, di/dt  425A/µs, VDD  V(BR)DSS, TJ  175°C.  Pulse width  400µs; duty cycle  2%.  Coss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while VDS is rising from 0 to 80% VDSS.  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.  R is measured at TJ approximately 90°C.  Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 20A, VGS =10V.  When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback April 22, 2015 IRFB/S/SL7787PbF Dynamic Electrical Characteristics @ T J = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg– Qgd) Turn-On Delay Time Rise Time Min. 154 ––– ––– ––– ––– ––– ––– Typ. ––– 73 18 23 50 11 48 td(off) Turn-Off Delay Time ––– 51 Max. Units Conditions ––– S VDS = 10V, ID =46A 109 ID = 46A ––– VDS = 38V nC ––– VGS = 10V ––– ––– VDD = 38V ––– ID = 46A ns ––– RG= 2.7 tf Fall Time ––– 39 ––– VGS = 10V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) ––– ––– ––– 4020 330 205 ––– ––– ––– VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig.7 ––– 295 ––– VGS = 0V, VDS = 0V to 60V ––– 380 ––– VGS = 0V, VDS = 0V to 60V Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Min. Typ. Max. Units ––– ––– 76 ––– ––– 280 Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 dv/dt Peak Diode Recovery dv/dt trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ––– ––– ––– ––– ––– ––– 10 33 39 42 61 2.2 ––– ––– ––– ––– ––– ––– Coss eff.(ER) Coss eff.(TR) pF Diode Characteristics Symbol IS ISM 3 www.irf.com © 2015 International Rectifier A V D G S TJ = 25°C,IS = 46A,VGS = 0V  V/ns TJ = 175°C,IS =46A,VDS = 75V TJ = 25°C VDD = 64V ns TJ = 125°C IF = 46A, TJ = 25°C di/dt = 100A/µs  nC TJ = 125°C A TJ = 25°C Submit Datasheet Feedback April 22, 2015 IRFB/S/SL7787PbF 1000 1000 100 BOTTOM 10 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 100 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 10  60µs PULSE WIDTH Tj = 175°C  60µs PULSE WIDTH Tj = 25°C 1 1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 100 2.5 1000 100 TJ = 175°C 10 TJ = 25°C 1 VDS = 25V  60µs PULSE WIDTH 0.1 2.0 3.0 4.0 5.0 6.0 ID = 46A VGS = 10V 2.0 1.5 1.0 0.5 7.0 -60 -40 -20 VGS, Gate-to-Source Voltage (V) 100000 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 5. Typical Transfer Characteristics Fig 6. Normalized On-Resistance vs. Temperature 14 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = Cgs + C gd , Cds SHORT ED C rss = Cgd C oss = C ds + C gd C, Capacitance (pF) 10 Fig 4. Typical Output Characteristics Fig 3. Typical Output Characteristics 10000 Ciss 1000 Coss Crss ID= 46A 12 VDS= 60V VDS= 38V VDS= 15V 10 8 6 4 2 0 100 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage 4 1 VDS, Drain-to-Source Voltage (V) www.irf.com © 2015 International Rectifier 0 20 40 60 80 100 QG Total Gate Charge (nC) Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback April 22, 2015 IRFB/S/SL7787PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100µsec 100 TJ = 175°C 10 TJ = 25°C 1 100 1msec 10 1 Tc = 25°C Tj = 175°C Single Pulse V GS = 0V DC 0.1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1.6 1 10 VDS, Drain-toSource Voltage (V) V SD, Source-to-Drain Voltage (V) Fig 10. Maximum Safe Operating Area Fig 9. Typical Source-Drain Diode Forward Voltage 95 0.8 Id = 1.0mA 0.6 90 Energy (µJ) V(BR)DSS, Drain-to-Source Breakdown Voltage (V) 10msec OPERATION IN THIS AREA LIMITED BY R (on) DS 85 0.4 80 0.2 75 0.0 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 20 30 40 50 60 70 80 VDS, Drain-to-Source Voltage (V) TJ , Temperature ( °C ) Fig 11. Drain-to-Source Breakdown Voltage RDS(on), Drain-to -Source On Resistance ( m) 10 Fig 12. Typical Coss Stored Energy 30.0 VGS = 5.5V VGS = 6.0V 25.0 VGS = 7.0V VGS = 8.0V VGS = 10V 20.0 15.0 10.0 5.0 0 40 80 120 160 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback April 22, 2015 IRFB/S/SL7787PbF Thermal Response ( ZthJC ) °C/W 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming  Tj = 150°C and Tstart =25°C (Single Pulse) 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. (Single Pulse) 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Avalanche Current vs. Pulse Width 160 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 46A EAR , Avalanche Energy (mJ) 140 120 100 80 60 40 20 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature 6 www.irf.com © 2015 International Rectifier Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Submit Datasheet Feedback April 22, 2015 IRFB/S/SL7787PbF 16 4.0 IF = 30A VR = 64V VGS(th) Gate threshold Voltage (V) 3.5 TJ = 25°C TJ = 125°C 12 IRRM (A) 3.0 ID = 100µA ID = 250µA 2.5 ID = 1.0mA ID = 1.0A 2.0 8 4 1.5 1.0 0 -75 -50 -25 0 25 50 75 100 125 150 175 0 200 TJ , Temperature ( °C ) 600 800 Fig 18. Typical Recovery Current vs. dif/dt Fig 17. Threshold Voltage vs. Temperature 250 16 IF = 46A VR = 64V IF = 30A VR = 64V 200 TJ = 25°C TJ = 125°C QRR (nC) 12 IRRM (A) 400 di F /dt ( A/µs) 8 4 TJ = 25°C TJ = 125°C 150 100 50 0 0 0 200 400 600 0 800 200 400 600 800 di F /dt ( A/µs) di F /dt ( A/µs) Fig 19. Typical Recovery Current vs. dif/dt Fig 20. Typical Stored Charge vs. dif/dt 250 IF = 46A VR = 64V QRR (nC) 200 TJ = 25°C TJ = 125°C 150 100 50 0 0 200 400 600 800 di F /dt ( A/µs) Fig 21. Typical Stored Charge vs. dif/dt 7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback April 22, 2015 IRFB/S/SL7787PbF Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V (B R )D S S tp 15V D R IV E R L VDS D .U .T RG IA S + VD D - A 20V tp IAS 0 .0 1  Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Id Vds Vgs VDD V g s (th ) Q gs1 Q gs2 Fig 25a. Gate Charge Test Circuit 8 www.irf.com © 2015 International Rectifier Q gd Q godr Fig 25b. Gate Charge Waveform Submit Datasheet Feedback April 22, 2015 IRFB/S/SL7787PbF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information EXAM PLE: T H IS IS A N IR F 1 0 1 0 LO T C O D E 1789 ASSEM BLED O N W W 19, 2000 IN T H E A S S E M B L Y L IN E "C " N o t e : "P " in a s s e m b ly lin e p o s it io n in d ic a t e s "L e a d - F r e e " IN T E R N A T IO N A L R E C T IF IE R LO G O ASSEM BLY LO T C O D E PART N UM BER D ATE C O D E YEAR 0 = 2000 W EEK 19 L IN E C TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback April 22, 2015 IRFB/S/SL7787PbF TO-262 Package Outline (Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLED ON WW19, 1997 IN THE ASSEMBLYLINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = ASSEMBLYSITE CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback April 22, 2015 IRFB/S/SL7787PbF D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE YEAR 0 = 2000 WEEK 02 LINE L OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE P = DESIGNATES LEAD - FREE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SITE CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback April 22, 2015 IRFB/S/SL7787PbF D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 24.30 (.957) 23.90 (.941) 15.42 (.609) 15.22 (.601) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 12 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback April 22, 2015 IRFB/S/SL7787PbF Qualification Information† Industrial (per JEDEC JESD47F) †† Qualification Level Moisture Sensitivity Level TO-220 N/A 2 D Pak MSL1 TO-262 (per JEDEC J-STD-020D††) Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date 03/05/2015 04/21/15 Comment  Updated EAS (L =1mH) = 209mJ on page 2  Updated note 9 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 20A, VGS =10V” on page 2  Updated package outline on page 9,10,11.  Updated Vsd curve Fig 9 on page 5 IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 13 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback April 22, 2015 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 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