PD -97693
IRFB812PbF
HEXFET® Power MOSFET
Applications
• Zero Voltage Switching SMPS
• Uninterruptible Power Supplies
• Motor Control applications
VDSS RDS(on) typ. Trr typ. ID
500V
75ns
1.75Ω
Features and Benefits
• Fast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Higher Gate voltage threshold offers improved noise
immunity.
3.6A
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
3.6
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
2.3
IDM
14.4
Pulsed Drain Current c
PD @TC = 25°C Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
VGS
e
dv/dt
TJ
Peak Diode Recovery dv/dt
TSTG
Storage Temperature Range
Operating Junction and
78
W
0.63
± 20
W/°C
V
32
-55 to + 150
V/ns
300 (1.6mm from case )
10lb in (1.1N m)
x
Mounting torque, 6-32 or M3 screw
Diode Characteristics
Parameter
A
°C
Soldering Temperature, for 10 seconds
Symbol
Units
x
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
ISM
(Body Diode)
Pulsed Source Current
–––
––– 14.4
showing the
integral reverse
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.2
V
p-n junction diode.
TJ = 25°C, IS = 3.6A, VGS = 0V
trr
Reverse Recovery Time
–––
75
110
ns
TJ = 25°C, IF = 3.6A
Qrr
Reverse Recovery Charge
–––
–––
94
135
140
200
nC
TJ = 125°C, di/dt = 100A/μs
TJ = 25°C, IS = 3.6A, VGS = 0V
IRRM
Reverse Recovery Current
–––
–––
220
3.2
330
4.8
A
TJ = 125°C, di/dt = 100A/μs
TJ = 25°C
ton
Forward Turn-On Time
c
3.6
MOSFET symbol
A
D
G
f
f
S
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes through are on page 2
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1
6/23/11
IRFB812PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
IDSS
IGSS
Parameter
Min. Typ. Max. Units
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
500
–––
–––
3.0
–––
–––
–––
–––
–––
0.37
1.75
–––
–––
–––
–––
–––
–––
–––
2.2
5.0
25
2.0
100
-100
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 250μA
Ω VGS = 10V, ID = 2.2A
V VDS = VGS, ID = 250μA
μA VDS = 500V, VGS = 0V
mA VDS = 400V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
f
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Coss eff. (ER)
Parameter
Min. Typ. Max. Units
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
7.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
22
24
17
810
47
7.3
610
16
5.9
37
–––
20
7.3
7.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
ns
Conditions
VDS = 50V, ID = 2.2A
ID = 3.6A
VDS = 400V
VGS = 10V, See Fig.14a &14b
VDD = 250V
ID = 3.6A
RG = 17Ω
VGS = 10V, See Fig. 15a & 15b
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V,VDS = 0V to 400V
f
f
pF
g
(Energy Related)
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
c
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
h
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
h
Notes:
max. junction temperature. (See Fig. 11)
Starting TJ = 25°C, L = 93mH, RG = 25Ω,
IAS = 1.8A. (See Figure 13).
ISD = 3.6A, di/dt ≤ 520A/μs, VDDV(BR)DSS,
TJ ≤ 150°C.
c
Parameter
Junction-to-Case
Repetitive rating; pulse width limited by
2
d
Typ.
–––
–––
–––
Max.
150
1.8
7.8
Units
mJ
A
mJ
Typ.
Max.
Units
–––
0.5
–––
1.6
–––
62
°C/W
Pulse width ≤ 300μs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Coss eff.(ER) is a fixed capacitance that stores the same energy
as Coss while VDS is rising from 0 to 80% V DSS .
Rθ is measured at TJ approximately 90°C
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IRFB812PbF
100
100
10
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
6.2V
5.9V
5.8V
5.6V
5.5V
5.3V
1
0.1
5.3V
BOTTOM
0.01
≤60μs PULSE WIDTH
1
Tj = 150°C
0.1
10
100
1
VDS, Drain-to-Source Voltage (V)
10
Fig 2. Typical Output Characteristics
100
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 1. Typical Output Characteristics
≤60μs PULSE WIDTH
10
TJ = 150°C
1
100
V DS, Drain-to-Source Voltage (V)
VDS = 50V
ID, Drain-to-Source Current(A)
5.3V
1
≤60μs PULSE WIDTH
Tj = 25°C
0.1
10
VGS
15V
10V
6.2V
5.9V
5.8V
5.6V
5.5V
5.3V
TJ = 25°C
ID = 3.6A
2.5
VGS = 10V
2.0
1.5
1.0
0.5
0.0
0.1
4
5
6
7
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance (pF)
10000
Coss = Cds + Cgd
1000
Ciss
100
Coss
Crss
10
1
1
10
100
1000
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
IRFB812PbF
650
Id = 250uA
600
550
500
-60 -40 -20 0
VDS, Drain-to-Source Voltage (V)
T J , Temperature ( °C )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typ. Breadown Voltage
vs. Temperature
100
16
VDS= 400V
VDS= 250V
12
ISD, Reverse Drain Current (A)
VGS, Gate-to-Source Voltage (V)
ID= 3.6A
VDS= 100V
8
4
T J = 150°C
10
1
T J = 25°C
VGS = 0V
0
0
4
8
12
QG Total Gate Charge (nC)
4
20 40 60 80 100 120 140 160
16
0.1
0.2
0.4
0.6
0.8
1.0
VSD, Source-to-Drain Voltage (V)
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IRFB812PbF
RDS (on) , Drain-to-Source On Resistance (Ω)
ID , Drain Current (A)
4
3
2
1
0
25
50
75
100
125
150
3.0
2.5
VGS = 20V
VGS = 10V
2.0
1.5
0
1
T C , CaseTemperature (°C)
2
3
4
5
6
7
ID , Drain Current (A)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 9. Typical Rdson Vs. Drain Current
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFB812PbF
ID, Drain-to-Source Current (A)
100
EAS, Single Pulse Avalanche Energy (mJ)
700
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100μsec
1msec
1
10msec
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
ID
0.4A
0.7A
BOTTOM 1.8A
TOP
600
500
400
300
200
100
0
DC
25
0.01
1
10
100
1000
VDS, Drain-toSource Voltage (V)
Fig 12. Maximum Safe Operating Area
50
75
100
125
150
Starting T J, Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
V(BR)DSS
15V
tp
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
tp
A
0.01Ω
I AS
Fig 13a. Unclamped Inductive Test Circuit
Fig 13b. Unclamped Inductive Waveforms
Id
Vds
Vgs
L
DUT
0
1K
S
VCC
Vgs(th)
Qgs1 Qgs2
Fig 14a. Gate Charge Test Circuit
6
Qgd
Qgodr
Fig 14b. Gate Charge Waveform
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IRFB812PbF
RD
VDS
VDS
90%
V GS
D.U.T.
RG
+
- VDD
10%
VGS
V10V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
Fig 15a. Switching Time Test Circuit
D.U.T
td(off)
Driver Gate Drive
+
P.W.
-
Reverse
Recovery
Current
VDD
P.W.
Period
D.U.T. ISD Waveform
+
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
*
•
•
•
•
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
tf
Fig 15b. Switching Time Waveforms
+
RG
tr
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
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7
IRFB812PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EXAMPLE: T HIS IS AN IRF1010
LOT CODE 1789
AS S EMBLED ON WW 19, 2000
IN THE AS S EMBLY LINE "C"
Note: "P" in as sembly line position
indicates "Lead - Free"
INT ERNATIONAL
RECTIFIER
LOGO
AS S EMBLY
LOT CODE
PART NUMBER
DAT E CODE
YEAR 0 = 2000
WEEK 19
LINE C
TO-220AB packages are not recommended for Surface Mount Application.
Note:For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/11
8
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IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
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