IRFH5006TR2PBF

IRFH5006PbF HEXFET® Power MOSFET VDS 60 V R DS(on) max 4.1 mΩ Qg (typical) 69 nC RG (typical) 1.2 Ω (@V GS = 10V) ID (@Tmb = 25°C) h 100 A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon (≤ 4.1mΩ) Low Thermal Resistance to PCB (≤ 0.8°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) Lower Conduction Losses Enables better thermal dissipation Increased Reliability results in Increased Power Density Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Base part number Package Type IRFH5006PBF PQFN 5mm x 6mm ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Orderable part number IRFH5006TRPBF Absolute Maximum Ratings Max. Units VDS VGS Drain-to-Source Voltage Gate-to-Source Voltage 60 ±20 V ID @ TA = 25°C ID @ TA = 70°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 21 17 ID @ Tmb = 25°C ID @ Tmb = 100°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation 100 100 Parameter IDM PD @TA = 25°C c PD @ Tmb = 25°C g Power Dissipation g TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range h h 400 3.6 156 g 0.029 -55 to + 150 A W W/°C °C Notes  through † are on page 9 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH5006PbF Static @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Min. 60 ––– ––– 2.0 ––– ––– ––– ––– ––– 92 ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.07 3.5 ––– -8.0 ––– ––– ––– ––– ––– 69 12 6.8 20 30.2 26.8 23 Max. Units Conditions ––– V VGS = 0V, ID = 250μA ––– V/°C Reference to 25°C, ID = 1mA 4.1 mΩ VGS = 10V, ID = 50A 4.0 V VDS = VGS, ID = 150μA ––– mV/°C 20 VDS = 60V, VGS = 0V μA 250 VDS = 60V, VGS = 0V, TJ = 125°C 100 VGS = 20V nA -100 VGS = -20V ––– S VDS = 25V, ID = 50A 104 VDS = 30V ––– ––– VGS = 10V nC ID = 50A ––– ––– See Fig.17 & 18 ––– ––– nC VDS = 16V, VGS = 0V RG td(on) tr td(off) tf Ciss Coss Crss Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– ––– 1.2 9.6 13 30 12 4175 550 255 ––– ––– ––– ––– ––– ––– ––– ––– BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current e Ω ns pF VDD = 30V, VGS = 10V ID = 50A RG=1.8Ω See Fig.15 VGS = 0V VDS = 30V ƒ = 1.0MHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR c Typ. ––– ––– d Max. 285 50 Units mJ A Diode Characteristics Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton Min. Typ. Max. Units h ––– ––– 100 c ––– A ––– 400 Conditions MOSFET symbol showing the integral reverse D G p-n junction diode. TJ = 25°C, IS = 50A, VGS = 0V TJ = 25°C, IF = 50A, VDD = 30V di/dt = 500A/μs ––– ––– 1.3 V ––– 28 42 ns ––– 130 195 nC Time is dominated by parasitic Inductance S e e Thermal Resistance Parameter R θJC-mb R θJC (Top) R θJA R θJA (