IRFH5010PbF
HEXFET® Power MOSFET
VDS
100
V
RDS(on) max
9.0
mΩ
Qg (typical)
67
nC
RG (typical)
1.2
Ω
(@VGS = 10V)
ID
100
(@Tc(Bottom) = 25°C)
h
PQFN 5X6 mm
A
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
Features and Benefits
Benefits
Features
Low RDSon (< 9 mΩ)
Low Thermal Resistance to PCB (
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