IRFH5020TR2PBF

IRFH5020PbF HEXFET® Power MOSFET VDS 200 V RDS(on) max 55 mΩ Qg (typical) 36 nC RG (typical) 1.9 Ω ID 34 A (@VGS = 10V) (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon Low Thermal Resistance to PCB (≤ 0.8°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Lower Conduction Losses Enable better thermal dissipation Increased Reliability results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number Package Type IRFH5020TRPbF PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 IRFH5020TR2PbF PQFN 5mm x 6mm Tape and Reel 400 Note EOL notice #259 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC(Top) = 25°C ID @ TC(Top) = 100°C IDM PD @TA = 25°C PD @ TC(Top) = 25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range g f Max. 200 ± 20 5.1 4.1 34 21 7.8 4.9 63 3.6 8.3 Units 0.07 -55 to + 150 W/°C c f V A W °C Notes  through … are on page 9 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH5020PbF Static @ TJ = 25°C (unless otherwise specified) Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage Parameter 200 ––– ––– V ΔΒVDSS /ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.22 ––– V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 7.5A RDS(on) Static Drain-to-Source On-Resistance ––– 47 55 mΩ VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V ΔVGS(th) Gate Threshold Voltage Coefficient ––– -12 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 μA ––– ––– 1.0 mA IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 18 ––– ––– Qg Total Gate Charge ––– 36 54 Qgs1 Pre-Vth Gate-to-Source Charge ––– 8.6 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 2.1 ––– Qgd Gate-to-Drain Charge ––– 11 ––– Qgodr Gate Charge Overdrive ––– 14 ––– nA S nC Switch Charge (Qgs2 + Q gd) ––– 13 ––– Output Charge ––– 13 ––– nC Ω Gate Resistance ––– 1.9 ––– Turn-On Delay Time ––– 9.3 ––– tr Rise Time ––– 7.7 ––– td(off) Turn-Off Delay Time ––– 21 ––– tf Fall Time ––– 6.0 ––– Ciss Input Capacitance ––– 2290 ––– Coss Output Capacitance ––– 120 ––– Crss Reverse Transfer Capacitance ––– 33 ––– VDS = VGS, ID = 150μA VDS = 200V, VGS = 0V VDS = 200V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 50V, ID = 7.5A VGS = 10V ID = 7.5A See Fig.17 & 18 Qsw RG e VDS = 100V Qoss td(on) Conditions VGS = 0V, ID = 250μA VDS = 16V, VGS = 0V VDD = 100V, VGS = 10V ns ID = 7.5A RG =1.8Ω See Fig.15 VGS = 0V pF VDS = 100V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. Max. Units ––– 320 mJ ––– 7.5 A Diode Characteristics Parameter Min. Continuous Source Current IS (Body Diode) (Body Diode) Max. ––– ––– 7.5 ––– ––– 63 Units c Conditions MOSFET symbol A Pulsed Source Current ISM Typ. D showing the integral reverse G S p-n junction diode. e VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 7.5A, VGS = 0V trr Reverse Recovery Time ––– 45 68 ns TJ = 25°C, IF = 7.5A, VDD = 100V Qrr Reverse Recovery Charge ––– 459 689 nC di/dt = 500A/μs ton Forward Turn-On Time e Time is dominated by parasitic Inductance Thermal Resistance Parameter RθJC (Bottom) RθJC (Top) RθJA RθJA (