IRFH5110PbF
HEXFET® Power MOSFET
VDS
100
V
RDS(on) max
12.4
mΩ
Qg (typical)
54
nC
RG (typical)
1.5
Ω
63
A
(@VGS = 10V)
ID
(@Tc(Bottom) = 25°C)
PQFN 5X6 mm
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
Features and Benefits
Benefits
Features
Low RDSon (< 12.4 mΩ)
Low Thermal Resistance to PCB (< 1.1°C/W)
100% Rg tested
Low Profile (
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