IRFH5206TRPBF

IRFH5206PbF HEXFET® Power MOSFET VDS 60 V RDS(on) max 6.7 m 40 1.7 nC 89 A (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) : : PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon (≤ 7.0mΩ at Vgs=10V) Low Thermal Resistance to PCB (≤ 1.2°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) Lower Conduction Losses Enable better thermal dissipation Increased Reliability results in Increased Power Density ⇒ Multi-Vendor Compatibility Industry-Standard Pinout Easier Manufacturing Compatible with Existing Surface Mount Techniques Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Increased Reliability Orderable part number Package Type IRFH5206TRPBF IRFH5206TR2PBF Standard Pack Form Quantity PQFN 5mm x 6mm Tape and Reel 4000 PQFN 5mm x 6mm Tape and Reel 400 Note EOL notice # 259 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor (Bottom) Operating Junction and Storage Temperature Range g f c f Max. 60 ± 20 16 13 89 56 350 3.6 100 Units 0.83 -55 to + 150 W/°C V A W °C Notes  through † are on page 9 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 19, 2015 IRFH5206PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Output Charge Min. 60 ––– ––– 2.0 ––– ––– ––– ––– ––– 73 ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.07 5.6 ––– -9.7 ––– ––– ––– ––– ––– 40 6.2 3.4 12 18.4 15.4 14 Max. Units Conditions ––– V VGS = 0V, ID = 250μA ––– V/°C Reference to 25°C, ID = 1mA 6.7 mΩ VGS = 10V, ID = 50A 4.0 V VDS = VGS, ID = 100μA ––– mV/°C 20 VDS = 60V, VGS = 0V μA 250 VDS = 60V, VGS = 0V, TJ = 125°C 100 VGS = 20V nA -100 VGS = -20V ––– S VDS = 25V, ID = 50A 60 ––– VDS = 30V ––– VGS = 10V nC ID = 50A ––– ––– See Fig.17 & 18 ––– ––– nC VDS = 16V, VGS = 0V Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– ––– 1.7 6.4 11 22 8.2 2490 360 160 ––– ––– ––– ––– ––– ––– ––– ––– Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss e Ω ns pF VDD = 30V, VGS = 10V ID = 50A RG=1.8Ω See Fig.15 VGS = 0V VDS = 25V ƒ = 1.0MHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR c Typ. ––– ––– d Units mJ A Max. 87 50 Diode Characteristics IS Parameter Continuous Source Current ISM (Body Diode) Pulsed Source Current c (Body Diode) Diode Forward Voltage Reverse Recovery Time VSD trr Qrr ton Reverse Recovery Charge Forward Turn-On Time Min. Typ. ––– ––– Max. Units 89 ––– ––– 350 ––– ––– ––– 26 1.3 39 Conditions MOSFET symbol D A showing the integral reverse V ns p-n junction diode. TJ = 25°C, IS = 50A, VGS = 0V TJ = 25°C, IF = 50A, VDD = 30V di/dt = 500A/μs G S e ––– 110 165 nC Time is dominated by parasitic Inductance e Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA (