IRFH5215PbF
HEXFET® Power MOSFET
VDS
150
V
RDS(on) max
58
mΩ
Qg (typical)
21
nC
RG (typical)
2.3
Ω
27
A
(@VGS = 10V)
ID
(@Tc(Bottom) = 25°C)
PQFN 5X6 mm
Applications
•
•
•
•
Primary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Features and Benefits
Features
Low RDSon (< 58 mΩ)
Low Thermal Resistance to PCB (
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