IRFH5302DPbF
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = 10V)
VSD
max
(@IS = 5.0A)
trr (typical)
ID
(@Tc(Bottom) = 25°C)
30
V
2.5
mΩ
0.65
V
19
ns
100
h
PQFN 5X6 mm
A
Applications
• Synchronous MOSFET for high frequency buck converters
Features and Benefits
Benefits
Features
Low RDSon (
