IRFH5303PbF
HEXFET® Power MOSFET
VDS
30
V
RDS(on) max
4.2
m
15
0.6
nC
82
A
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
:
:
PQFN 5X6 mm
Applications
• Control MOSFET for high frequency buck converters
Features and Benefits
Benefits
Features
Low charge (typical 15nC)
Low Rg (typical 0.6 Ω)
Low Thermal Resistance to PCB (
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