IRFH5303TR2PBF

IRFH5303PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 4.2 m 15 0.6 nC 82 A (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) : : PQFN 5X6 mm Applications • Control MOSFET for high frequency buck converters Features and Benefits Benefits Features Low charge (typical 15nC) Low Rg (typical 0.6 Ω) Low Thermal Resistance to PCB (