IRFH5306TR2PBF

IRFH5306PbF HEXFET® Power MOSFET V DS 30 V R DS(on) max 8.1 mΩ Qg (typical) 7.8 nC R G (typical) 1.4 Ω ID 44 A (@VGS = 10V) (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Control MOSFET for buck converters Features and Benefits Features Low charge (typical 7.8nC) Low thermal resistance to PCB (< 4.9°C/W) 100% Rg tested Low profile (< 0.9 mm) results in Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1, Industrial qualification Orderable part number IRFH5306TRPBF IRFH5306TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm ⇒ Benefits Lower switching losses Increased power density Increased reliability Increased power density Multi-vendor compatibility Easier manufacturing Environmentally friendly Increased reliability Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note EOL notice #259 Absolute Maximum Ratings Max. Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 30 ±20 15 13 ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation 44 28 60 3.6 26 TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range g g c g 0.029 -55 to + 150 Units V A W W/°C °C Notes  through … are on page 9 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 17, 2015 IRFH5306PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ΔΒVDSS/ΔTJ Min. Max. Units VGS = 0V, ID = 250μA 30 ––– ––– ––– ––– 0.02 6.9 ––– 8.1 Gate Threshold Voltage ––– 1.35 11 1.8 Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current ––– ––– -6.4 ––– ––– ––– V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 15A mΩ VGS = 4.5V, ID = 15A 13.3 2.35 V VDS = VGS, ID = 25μA ––– mV/°C VDS = 24V, VGS = 0V 5.0 μA VDS = 24V, VGS = 0V, TJ = 125°C 150 IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– 100 -100 gfs Qg Forward Transconductance Total Gate Charge 35 ––– ––– 7.8 ––– 12 Qgs1 Qgs2 Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge ––– ––– 1.8 1.1 ––– ––– Qgd Gate-to-Drain Charge ––– 3.0 ––– Qgodr Qsw Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– 1.9 4.1 ––– ––– Qoss RG Output Charge Gate Resistance ––– ––– 4.9 1.4 ––– td(on) Turn-On Delay Time ––– 9.0 ––– ––– tr td(off) Rise Time Turn-Off Delay Time ––– ––– 26 9.1 ––– ––– tf C iss Fall Time Input Capacitance ––– ––– 6.1 1125 ––– ––– C oss C rss Output Capacitance Reverse Transfer Capacitance ––– ––– 230 102 ––– ––– VGS(th) ΔVGS(th) IDSS V Conditions Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance R DS(on) Drain-to-Source Breakdown Voltage Typ. e e nA S nC VGS = 20V VGS = -20V VDS = 15V, ID = 15A VDS = 15V VGS = 4.5V ID = 15A See Fig.17 & 18 nC Ω VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ns ID = 15A R G=1.8Ω See Fig.15 VGS = 0V pF VDS = 15V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current Diode Characteristics c d Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr (Body Diode) Diode Forward Voltage Reverse Recovery Time Qrr ton Reverse Recovery Charge Forward Turn-On Time Min. Typ. ––– ––– Typ. Max. Units ––– 46 mJ ––– 15 A Max. Units MOSFET symbol 44 A c ––– ––– 60 ––– ––– ––– 17 1.0 26 Conditions V ns D showing the integral reverse G p-n junction diode. TJ = 25°C, IS = 15A, VGS = 0V TJ = 25°C, IF = 15A, VDD = 15V S e ––– 18 27 nC di/dt = 200A/μs Time is dominated by parasitic Inductance e Thermal Resistance R θJC (Bottom) R θJC (Top) Parameter g Junction-to-Ambient g Junction-to-Ambient R θJA R θJA (