IRFH5406PbF
HEXFET® Power MOSFET
VDS
60
V
RDS(on) max
14.4
mΩ
Qg (typical)
21
nC
RG (typical)
1.1
Ω
40
A
(@VGS = 10V)
ID
(@Tc(Bottom) = 25°C)
PQFN 5X6 mm
Applications
•
•
•
•
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Features and Benefits
Features
Benefits
Low RDSon (< 14.4 mΩ)
Low Thermal Resistance to PCB (< 2.7°C/W)
100% Rg tested
Low Profile (
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