StrongIRFET
IRFH7004PbF
HEXFET® Power MOSFET
Applications
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Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
40V
1.1mΩ
1.4mΩ
259A
ID (Package Limited)
100A
c
Benefits
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Base Part Number
Package Type
IRFH7004PBF
PQFN 5mm x 6mm
PQFN 5X6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
6.0
IRFH7004TRPBF
300
250
4.0
T J = 125°C
2.0
Limited By Package
200
150
100
50
T J = 25°C
0.0
0
4
6
8
10
12
14
16
18
20
25
Fig 1. Typical On-Resistance vs. Gate Voltage
www.irf.com © 2015 International Rectifier
50
75
100
125
150
T C , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
1
Orderable Part Number
ID = 100A
ID, Drain Current (A)
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Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
SOA
Enhanced body diode dV/dt and dI/dt Capability
RoHS Compliant containing no Lead, no Bromide,
and no Halogen
RDS(on), Drain-to -Source On Resistance (m Ω)
l
Fig 2. Maximum Drain Current vs. Case Temperature
Submit Datasheet Feedback
March 17, 2015
IRFH7004PbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
c
c
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
259
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
164
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
100
IDM
Pulsed Drain Current
1247
d
Units
A
Maximum Power Dissipation
156
W
Linear Derating Factor
1.3
W/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
PD @TC = 25°C
Avalanche Characteristics
Single Pulse Avalanche Energy
EAS (Thermally limited)
e
Single Pulse Avalanche Energy l
Avalanche Currentd
Repetitive Avalanche Energy d
EAS (Thermally limited)
IAR
EAR
°C
mJ
191
479
A
See Fig. 14, 15, 22a, 22b
mJ
Thermal Resistance
Symbol
RθJC (Bottom)
RθJC (Top)
k
Junction-to-Case k
Parameter
Junction-to-Case
j
Junction-to-Ambient j
Junction-to-Ambient
RθJA
RθJA (
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