IRFH7085TRPBF

StrongIRFET™ IRFH7085PbF HEXFET® Power MOSFET Application  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  DC/DC converters  DC/AC Inverters VDSS 60V RDS(on) typ. 2.6m max 3.2m ID 147A Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant PQFN 5X6 mm Base part number IRFH7085PbF Package Type PQFN 5mm x 6mm Fig 1. Typical On-Resistance vs. Gate Voltage 1 Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFH7085TRPbF Fig 2. Maximum Drain Current vs. Case Temperature Rev. 2.3, 2020-04-16 IRFH7085PbF Absolute Maximum Rating Symbol Parameter ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V  ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V  IDM Pulsed Drain Current  PD @ TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage TJ Operating Junction and TSTG Storage Temperature Range Avalanche Characteristics Symbol Parameter EAS (Thermally limited) Single Pulse Avalanche Energy  EAS (Thermally limited) Single Pulse Avalanche Energy  IAR Avalanche Current  EAR Repetitive Avalanche Energy  Thermal Resistance Parameter Junction-to-Case  RJC (Bottom) Junction-to-Case  RJC (Top) Junction-to-Ambient  RJA Junction-to-Ambient RJA (