IRFH7110TR2PBF

IRFH7110PbF HEXFET® Power MOSFET VDS Vgs max RDS(on) max (@VGS = 10V) QG (typical) RG (typical) ID (@Tc(Bottom) = 25°C) 100 ± 20 V V 13.5 mΩ 58 0.6 nC 50 Ω i PQFN 5X6 mm A Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Low RDSon (< 13.5mW) Low Thermal Resistance to PCB (< 1.2°C/W) Low Profile (