IRFH7440TR2PBF

StrongIRFET™ IRFH7440PbF HEXFET® Power MOSFET Application  Brushed Motor drive applications  BLDC Motor drive applications  PWM Inverterized topologies  Battery powered circuits  Half-bridge and full-bridge topologies  Electronic ballast applications  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters IRFH7440PbF PQFN 5mm x 6mm PQFN 5mm x 6mm RDS(on) typ. 1.8m max 2.4m Tape and Reel 159A PQFN 5X6 mm Standard Pack Form Quantity Tape and Reel 4000 Fig 1. Typical On-Resistance vs. Gate Voltage 1 40V ID Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  RoHS Compliant containing no Lead, no Bromide, and no Halogen Base part number Package Type VDSS 400 Orderable Part Number Note IRFH7440TRPbF IRFH7440TR2PbF EOL notice # 259 Fig 2. Maximum Drain Current vs. Case Temperature Rev. 2.5, 2020-04-16 IRFH7440PbF Absolute Maximum Rating Symbol Parameter ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V  ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V  IDM Pulsed Drain Current  PD @ TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage dv/dt Peak Diode Recovery TJ TSTG Operating Junction and Storage Temperature Range Avalanche Characteristics Symbol Parameter EAS (Thermally limited) Single Pulse Avalanche Energy  EAS (Thermally limited) Single Pulse Avalanche Energy  IAR Avalanche Current  EAR Repetitive Avalanche Energy  Thermal Resistance Parameter Junction-to-Case  RJC (Bottom) Junction-to-Case  RJC (Top) Junction-to-Ambient  RJA Junction-to-Ambient  RJA (