IRFH7440TRPBF

StrongIRFET™ IRFH7440PbF HEXFET® Power MOSFET Applications l Brushed Motor drive applications l BLDC Motor drive applications l PWM Inverterized topologies l Battery powered circuits l Half-bridge and full-bridge topologies l Electronic ballast applications l Synchronous rectifier applications l Resonant mode power supplies l OR-ing and redundant power switches l DC/DC and AC/DC converters Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l RoHS Compliant containing no Lead, no Bromide, and no Halogen Package Type IRFH7440PBF PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 6.0 ID (Package Limited) 85A c Orderable Part Number Note IRFH7440TRPBF IRFH7440TR2PBF EOL notice #259 200 ID = 50A 5.0 4.0 T J = 125°C 3.0 2.0 Limited By Package 150 100 50 TJ = 25°C 1.0 0 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 40V 1.8mΩ 2.4mΩ 159A PQFN 5X6 mm ID, Drain Current (A) RDS(on), Drain-to -Source On Resistance (m Ω) Base Part Number VDSS RDS(on) typ. max. ID (Silicon Limited) www.irf.com © 2015 International Rectifier 25 50 75 100 125 150 T C , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback July 7, 2015 IRFH7440PbF Absolute Maximum Ratings Symbol Parameter Max. Units c 101c 159 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation 104 W Linear Derating Factor 0.83 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery 3.0 V/ns TJ Operating Junction and d 624 f -55 to + 150 Storage Temperature Range TSTG Avalanche Characteristics Single Pulse Avalanche Energy EAS (Thermally limited) 121 EAS (Thermally limited) 232 IAR EAR Thermal Resistance Symbol e Single Pulse Avalanche Energy l Avalanche Currentd Repetitive Avalanche Energy d RθJC (Top) k Junction-to-Case k RθJA Junction-to-Ambient RθJC (Bottom) RθJA (