IRFH7446TRPBF

StrongIRFET™ IRFH7446PbF HEXFET® Power MOSFET Applications l Brushed Motor drive applications l BLDC Motor drive applications l PWM Inverterized topologies l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies l OR-ing and redundant power switches l DC/DC and AC/DC converters Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l RoHS Compliant containing no Lead, no Bromide, and no Halogen Package Type IRFH7446PBF PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 8.0 ID (Package Limited) 85A c Orderable part number Note IRFH7446TRPBF IRFH7446TR2PBF EOL notice #259 125 ID = 50A 7.0 Limited By Package 100 6.0 5.0 T J = 125°C 4.0 3.0 75 50 25 2.0 T J = 25°C 1.0 0 4 6 8 10 12 14 16 18 20 25 50 Fig 1. Typical On-Resistance vs. Gate Voltage www.irf.com © 2015 International Rectifier 75 100 125 150 T C , Case Temperature (°C) VGS, Gate -to -Source Voltage (V) 1 40V 2.5mΩ 3.3mΩ 117A PQFN 5X6 mm ID, Drain Current (A) RDS(on), Drain-to -Source On Resistance (m Ω) Base Part Number VDSS RDS(on) typ. max. ID (Silicon Limited) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback August 28, 2015 IRFH7446PbF Absolute Maximum Ratings Symbol Max. 117 Parameter Units c 74c ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 85 IDM Pulsed Drain Current 468 PD @TC = 25°C Maximum Power Dissipation d A 78 W Linear Derating Factor 0.63 W/°C VGS Gate-to-Source Voltage ± 20 V TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy EAS (Thermally limited) Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy d e l °C 78 mJ 152 See Fig. 14, 15, 22a, 22b d A mJ Thermal Resistance Symbol RθJC (Bottom) RθJC (Top) Parameter Junction-to-Case Typ. k Junction-to-Case k j Junction-to-Ambient j Junction-to-Ambient RθJA RθJA (