IRFH7545TRPBF

StrongIRFET™ IRFH7545PbF HEXFET® Power MOSFET Application  Brushed Motor drive applications  BLDC Motor drive applications  Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters   VDSS 60V RDS(on) typ. 4.3m max 5.2m ID 85A   Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant PQFN 5 x 6 mm Package Type IRFH7545PbF PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 20 IRFH7545TRPbF 80 15 10 TJ = 125°C 5 0 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage www.irf.com 60 40 20 TJ = 25°C 2 1 Orderable Part Number 100 ID = 51A ID, Drain Current (A) RDS(on), Drain-to -Source On Resistance (m) Base part number © 2014 International Rectifier 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback November 7, 2014 IRFH7545PbF   Absolute Maximum Rating Symbol ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TC = 25°C Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage TJ Operating Junction and TSTG Storage Temperature Range Avalanche Characteristics  EAS (Thermally limited) Single Pulse Avalanche Energy  EAS (Thermally limited) Single Pulse Avalanche Energy  IAR Avalanche Current  EAR Repetitive Avalanche Energy  Thermal Resistance   Symbol Parameter Junction-to-Case  RJC (Bottom) Junction-to-Case  RJC (Top) Junction-to-Ambient  RJA Junction-to-Ambient  RJA (