IRFH7787TRPBF

StrongIRFET™ IRFH7787PbF HEXFET® Power MOSFET Application  Brushed motor drive applications  BLDC motor drive applications  Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC inverters   IRFH7787PbF PQFN 5mm x 6mm 6.6m max 8.0m 68A PQFN 5 x 6 mm Standard Pack Form Quantity Tape and Reel 4000 18 Orderable Part Number IRFH7787TRPbF 70 ID = 41A 60 16 14 T J = 125°C 12 10 T J = 25°C 8 50 40 30 20 10 6 0 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 RDS(on) typ.   ID, Drain Current (A) RDS(on), Drain-to -Source On Resistance (m ) Package Type 75V ID Benefits  Improved gate, avalanche and dynamic dV/dt ruggedness  Fully characterized capacitance and avalanche SOA  Enhanced body diode dV/dt and dI/dt capability  Lead-free, RoHS compliant Base part number VDSS www.irf.com © 2015 International Rectifier 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback February 19, 2015 IRFH7787PbF   Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max. 68 43 270 83 0.67 ± 20 RDS(on) Static Drain-to-Source On-Resistance VGS(th) IDSS Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance RG W W/°C V °C   100 146 mJ See Fig 15, 16, 23a, 23b A mJ Parameter Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient A -55 to + 150   Avalanche Characteristics  EAS (Thermally limited) Single Pulse Avalanche Energy  EAS (Thermally limited) Single Pulse Avalanche Energy  IAR Avalanche Current  Repetitive Avalanche Energy  EAR Thermal Resistance   Symbol Junction-to-Case  RJC (Bottom) Junction-to-Case  RJC (Top) Junction-to-Ambient RJA Junction-to-Ambient RJA (