IRFH7932PbF
HEXFET® Power MOSFET
Applications
Synchronous MOSFET for Notebook
Processor Power
Synchronous Rectifer MOSFET for Isolated
DC-DC Converters in Networking Systems
l
l
VDSS
30V
RDS(on) max
Qg
3.3m @VGS = 10V 34nC
:
Benefits
Very low RDS(ON) at 4.5V VGS
Low Gate Charge
Fully Characterized Avalanche Voltage and
Current
100% Tested for RG
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
Low Thermal Resistance
Large Source Lead for more reliable Soldering
l
l
l
l
l
l
l
l
Orderable part number
Package Type
IRFH7932TRPbF
IRFH7932TR2PbF
S
S
S
D
D
G
D
D
PQFN
Standard Pack
Form
Quantity
PQFN 5mm x 6mm
Tape and Reel
4000
PQFN 5mm x 6mm
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
Max.
VDS
Drain-to-Source Voltage
30
VGS
± 20
ID @ TA = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
20
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
104
IDM
PD @TA = 70°C
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
PD @TA = 25°C
V
25
c
Power Dissipation g
Power Dissipation g
Units
A
200
3.4
W
2.2
g
W/°C
0.03
-55 to + 150
°C
Thermal Resistance
Parameter
f
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient
g
Typ.
Max.
–––
2.2
–––
37
Units
°C/W
Notes through
are on page 10
1
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IRFH7932PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/∆TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
30
–––
–––
0.021
–––
–––
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
2.5
3.3
3.3
3.9
mΩ
VGS(th)
∆VGS(th)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
1.35
–––
1.8
-5.9
2.35
V
VDS = VGS, ID = 100µA
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
1.0
150
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
100
-100
nA
VGS = 20V
VGS = -20V
gfs
Qg
Forward Transconductance
Total Gate Charge
59
–––
–––
34
–––
51
S
VDS = 15V, ID = 20A
Qgs1
Qgs2
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
–––
–––
7.9
3.6
–––
–––
Qgd
Qgodr
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
–––
–––
11
12
–––
–––
Output Charge
–––
–––
15
19
–––
–––
RG
td(on)
Gate Resistance
Turn-On Delay Time
–––
–––
0.7
20
–––
–––
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
48
23
20
–––
–––
–––
Ciss
Coss
Input Capacitance
Output Capacitance
–––
–––
4270
830
–––
–––
Crss
Reverse Transfer Capacitance
–––
420
–––
Qsw
Qoss
nC
nC
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 20A
e
e
VDS = 15V
VGS = 4.5V
ID = 20A
See Fig.17 & 18
VDS = 16V, VGS = 0V
Ω
VDD = 15V, VGS = 4.5V
ns
pF
ID = 20A
RG=1.8Ω
See Fig.15
VGS = 0V
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ.
–––
Max.
16
Units
mJ
–––
20
A
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
Min. Typ. Max. Units
–––
–––
Conditions
MOSFET symbol
4.2
A
showing the
integral reverse
D
G
–––
200
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
–––
1.0
V
p-n junction diode.
TJ = 25°C, IS = 20A, VGS = 0V
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
21
33
32
50
ns
nC
TJ = 25°C, IF = 20A, VDD = 15V
See Fig.16
di/dt = 300A/µs
ton
Forward Turn-On Time
c
2
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S
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFH7932PbF
1000
1000
100
BOTTOM
10
TOP
1
0.1
2.3V
≤ 60µs PULSE WIDTH
Tj = 25°C
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
1
10
BOTTOM
10
2.3V
1
≤ 60µs PULSE WIDTH
Tj = 150°C
0.1
0.01
0.1
100
0.1
100
10
100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
100
T J = 150°C
10
T J = 25°C
1
0.1
VDS = 15V
≤ 60µs PULSE WIDTH
0.01
1.0
2.0
3.0
4.0
5.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
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ID = 25A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRFH7932PbF
100000
14
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C, Capacitance (pF)
C oss = C ds + C gd
10000
Ciss
Coss
1000
Crss
ID= 20A
12
VDS= 24V
VDS= 15V
10
8
6
4
2
0
100
1
10
0
100
20
40
60
80
100
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100
T J = 150°C
10
T J = 25°C
1
100µsec
1msec
10
10msec
1
T A = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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1.6
0
1
10
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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100
IRFH7932PbF
VGS(th) Gate threshold Voltage (V)
30
ID , Drain Current (A)
25
20
15
10
5
2.0
ID = 100µA
1.6
1.2
0.8
0
25
50
75
100
125
-75
150
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
T J , Ambient Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
Thermal Response ( Z thJA )
D = 0.50
10
0.20
0.10
0.05
0.02
0.01
1
τJ
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
R1
R1
τJ
τ1
R2
R2
R3
R3
Ri (°C/W)
R4
R4
τC
τ
τ2
τ1
τ3
τ2
τ3
Ci= τi/Ri
Ci i/Ri
τ4
τ4
τi (sec)
0.54874
0.000128
2.05644
0.023270
7.36536
1.0678
6.44303
38.4
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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100
16
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance ( mΩ)
IRFH7932PbF
ID = 25A
14
12
10
8
T J = 125°C
6
4
2
T J = 25°C
0
70
ID
5.86A
6.91A
BOTTOM 20.0A
60
TOP
50
40
30
20
10
0
2
3
4
5
6
7
8
9
10
25
VGS, Gate-to-Source Voltage (V)
50
75
V DS
V GS
+
V
- DD
IAS
20V
RD
D.U.T.
RG
DRIVER
D.U.T
RG
150
Fig 13. Maximum Avalanche Energy
vs. Drain Current
15V
VDS
125
Starting T J , Junction Temperature (°C)
Fig 12. On-Resistance vs. Gate Voltage
L
100
+
-V DD
V10V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
A
0.01Ω
tp
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
Fig 15a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
I AS
Fig 14b. Unclamped Inductive Waveforms
6
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tr
td(off)
tf
Fig 15b. Switching Time Waveforms
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IRFH7932PbF
D.U.T
Driver Gate Drive
P.W.
+
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
V DD
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Current Regulator
Same Type as D.U.T.
Id
Vds
Vgs
50KΩ
12V
.2µF
.3µF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Qgs1 Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 17. Gate Charge Test Circuit
7
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Fig 18. Gate Charge Waveform
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IRFH7932PbF
PQFN Package Details
PQFN Part Marking
INTERNATIONAL
RECTIFIER LOGO
6
DATE CODE
XXXX
ASSEMBLY SITE CODE
(Per SCOP 200-002)
PART NUMBER
XYWWX
XXXXX
MARKING CODE
(Per Marking Spec.)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min. last 4 digits of EATI #)
(Prod Mode - 4 digits SPN code)
TOP MARKING (LASER)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRFH7932PbF
PQFN Tape and Reel
9
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IRFH7932PbF
†
Qualification Information
Qualification level
Moisture Sensitivity Level
RoHS Compliant
Consumer ††
(per JEDEC JESD47F††† guidelines)
MSL1
SO-8
(per JEDEC J-STD-020D†††)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.078mH, RG = 25Ω, IAS = 20A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Rthjc is guaranteed by design
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Revision History
Date
12/16/2013
8/1/2014
Comments
• Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259)
• Updated data sheet with new IR corporate template
• Updated data sheet with PQFN Tape and Reel Diagram from Datasheet IRFH7934PbF
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.