IRFH8311PbF
VDS
Vgs
max
RDS(on) max
30
V
± 20
V
2.1
(@VGS = 10V)
(@VGS = 4.5V)
3.2
Qg typ.
30
ID
(@Tc(Bottom) = 25°C)
HEXFET® Power MOSFET
mΩ
nC
i
80
PQFN 5X6 mm
A
Applications
• Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features
Low Thermal Resistance to PCB (< 1.3°C/W)
Low Profile (
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