IRFHS9301TR2PBF

IRFHS9301PbF HEXFET® Power MOSFET VDS -30 V VGS max ±20 V RDS(on) max (@VGS = -10V) Qg (typical) ID (@TC = 25°C) TOP VIEW D 1 37 mΩ 13 nC D 2 A G 3 -8.5 d D 6 D D D D 5 D D S G 4 S D S S 2mm x 2mm PQFN Applications l l Charge and Discharge Switch for Battery Application System/load switch Features and Benefits Features Low RDSon (≤ 37mΩ) Benefits Lower Conduction Losses Low Thermal Resistance to PCB (≤ 13°C/W) Enable better thermal dissipation Low Profile (≤ 1.0 mm) results in Increased Power Density Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Increased Reliability Orderable part number Package Type IRFHS9301TRPBF IRFHS9301TR2PBF Environmentally Friendlier Standard Pack Form Quantity PQFN 2mm x 2mm Tape and Reel 4000 PQFN 2mm x 2mm Tape and Reel 400 Note EOL notice # 259 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C ID @ TC = 70°C ID @ TC = 25°C IDM PD @TA = 25°C PD @ TA = 70°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range f f Max. -30 ± 20 -6.0 -4.8 -13 -10 -8.5 d d d c -52 2.1 1.3 0.02 -55 to + 150 Units V A W W/°C °C Notes  through … are on page 2 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 21, 2014 IRFHS9301PbF Static @ TJ = 25°C (unless otherwise specified) Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage Parameter -30 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C ––– 30 37 65 -2.4 ––– RDS(on) Static Drain-to-Source On-Resistance VGS(th) ΔVGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient ––– -1.3 ––– 52 -1.8 -4.8 IDSS Drain-to-Source Leakage Current ––– ––– -1.0 ––– ––– -150 Gate-to-Source Forward Leakage ––– ––– -100 Gate-to-Source Reverse Leakage ––– ––– 100 IGSS mΩ Conditions VGS = 0V, ID = -250μA Reference to 25°C, ID = -1mA e = -6.2A e VGS = -10V, ID = -7.8A VGS = -4.5V, ID V VDS = VGS, ID = -25μA mV/°C VDS = -24V, VGS = 0V μA VDS = -24V, VGS = 0V, TJ = 125°C nA VGS = -20V VGS = 20V gfs Qg Forward Transconductance 9.3 ––– ––– S VDS = -10V, ID = -7.8A Total Gate Charge ––– 6.9 ––– nC VDS = -15V,VGS = -4.5V,ID = - 7.8A Qg Total Gate Charge ––– 13 ––– Qgs Gate-to-Source Charge ––– 2.1 ––– nC VDS = -15V Qgd Gate-to-Drain Charge ––– 3.9 ––– RG Gate Resistance ––– 17 ––– td(on) Turn-On Delay Time ––– 12 ––– VDD = -15V, VGS = -4.5V ID = -7.8A tr Rise Time ––– 80 ––– td(off) Turn-Off Delay Time ––– 13 ––– tf Fall Time ––– 25 ––– Ciss Input Capacitance ––– 580 ––– Coss Output Capacitance ––– 125 ––– Crss Reverse Transfer Capacitance ––– 79 ––– Min. Typ. Max. VGS = -10V ID = -7.8A Ω ns e RG = 2.0Ω See Figs. 19a & 19b VGS = 0V pF VDS = -25V ƒ = 1.0KHz Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current c (Body Diode) d ––– ––– -8.5 ––– ––– -52 ––– -1.2 Conditions Units MOSFET symbol A D showing the integral reverse G p-n junction diode. S e VSD Diode Forward Voltage ––– trr Reverse Recovery Time ––– 30 45 ns TJ = 25°C, IF = -7.8A, VDD = -15V Qrr Reverse Recovery Charge ––– 110 170 nC di/dt = 280/μs V TJ = 25°C, IS = -7.8A, VGS = 0V Thermal Resistance Typ. Max. RθJC (Bottom) Junction-to-Case ––– 13 RθJC (Top) ––– 90 RθJA Junction-to-Ambient f RθJA Junction-to-Ambient (t