IRFHS9351TRPBF

IRFHS9351PbF HEXFET® Power MOSFET VDS VGS max -30 ±20 V V RDS(on) max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application System/load switch Features and Benefits Features Low RDSon (≤ 170mΩ) Benefits Lower Conduction Losses Low Thermal Resistance to PCB (≤ 19°C/W) Enable better thermal dissipation Low Profile (≤ 1.0 mm) results in Increased Power Density Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Increased Reliability Orderable part number Package Type IRFHS9351TRPBF IRFHS9351TR2PBF Environmentally Friendlier Standard Pack Form Quantity PQFN 2mm x 2mm Tape and Reel 4000 PQFN 2mm x 2mm Tape and Reel 400 Note EOL notice # 259 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C ID @ TC = 70°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V ID @ TC = 25°C IDM PD @TA = 25°C PD @ TA = 70°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range f f Max. -30 ± 20 -2.3 -1.5 -5.1 -4.1 -3.4 -20 1.4 0.9 Units 0.01 -55 to + 150 W/°C d d d c V A W °C Notes  through † are on page 2 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 21, 2014 IRFHS9351PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS VDSS/ TJ RDS(on) Min. Typ. Max. Units Drain-to-Source Breakdown Voltage -30 ––– ––– V Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C ––– 135 170 ––– 235 290 Static Drain-to-Source On-Resistance V GS(th) VGS(th) IDSS IGSS m Gate Threshold Voltage -1.3 -1.8 -2.4 V Gate Threshold Voltage Coefficient ––– -4.6 ––– mV/°C Drain-to-Source Leakage Current ––– ––– -1.0 ––– ––– -150 μA Gate-to-Source Forward Leakage ––– ––– -100 Gate-to-Source Reverse Leakage ––– ––– 100 gfs Forward Transconductance 2.4 ––– ––– S ––– 1.9 ––– nC ––– 3.7 ––– ––– 0.6 ––– ––– 1.1 ––– h h Qg Total Gate Charge Qg Total Gate Charge Qgs Gate-to-Source Charge h Gate-to-Drain Charge h Gate R esistance h Qgd RG nA Conditions V GS = 0V, I D = -250μA Reference to 25°C, ID = -1mA V GS = -10V, I D = -3.1A e e V GS = -4.5V, ID = -2.5A V DS = V GS, ID = -10μA V DS = -24V, VGS = 0V V DS = -24V, VGS = 0V, T J = 125°C V GS = -20V V GS = 20V V DS = -10V, ID = -3.1A V DS = -15V,VGS = -4.5V,ID = - 3.1A V GS = -10V nC V DS = -15V I D = -3.1A ––– 17 ––– Turn-On Delay Time ––– 8.3 ––– V DD = -15V, V GS = -4.5V tr Rise Time ––– 30 ––– I D = -3.1A td(off ) Turn-Off Delay Time ––– 6.3 ––– tf Fall Time ––– 7.9 ––– Ciss Input Capacitance ––– 160 ––– td(on) Coss Output Capacitance ––– 39 ––– Crss Reverse Transfer C apacitance ––– 26 ––– Min. Typ. Max. ns e RG = 1.8 See Figs. 19a & 19b V GS = 0V pF V DS = -25V ƒ = 1.0KHz Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM ––– -5.1 ––– ––– -20 c -1.2 V SD Diode Forward Voltage ––– ––– trr Reverse Recovery Time ––– 20 Qrr Reverse Recovery Charge ––– 42 Conditions MOSFET symbol A Pulsed Source Current (Body Diode) ––– Units integral reverse Parameter JC (Bottom) R JC (Top) g Junction-to-Case g Junction-to-Case f R JA Junction-to-Ambient R JA Junction-to-Ambient (t