IRFI1310NPBF

IRFI1310NPbF         Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS  Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET   Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. Base Part Number Package Type IRFI1310NPbF TO-220 Full-Pak Absolute Maximum Ratings Symbol VDSS 100V RDS(on) 0.036 ID 24A G G Gate D Drain Standard Pack Form Quantity Tube 50 IRFI1310NPbF Parameter Max. Continuous Drain Current, VGS @ 10V 24 Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation 17 140 56 Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited)  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 0.37 ± 20 1 Parameter S Source Orderable Part Number ID @ TC = 25°C Thermal Resistance   Symbol Junction-to-Case RJC Junction-to-Ambient RJA S TO-220 Full-Pak ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG D Units A W 420 22 5.6 5.0 -55 to + 175 W/°C V mJ A mJ V/ns   °C  300 10 lbf•in (1.1N•m) Typ. ––– ––– Max. 2.7 65     Units °C/W 2017-04-27 IRFI1310NPbF   Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 100 ––– ––– 2.0 14 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance ––– LS Internal Source Inductance ––– IGSS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance C Drain to Sink Capacitance Source-Drain Ratings and Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr ton Reverse Recovery Charge Forward Turn-On Time ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 0.11 ––– V/°C Reference to 25°C, ID = 1mA  ––– 0.036  VGS = 10V, ID = 13A ––– 4.0 V VDS = VGS, ID = 250µA ––– ––– S VDS = 25V, ID = 22A ––– 25 VDS = 100 V, VGS = 0V µA ––– 250 VDS = 80V,VGS = 0V,TJ =150°C ––– 100 VGS = 20V nA ––– -100 VGS = -20V ––– 120 ID = 22A nC   VDS = 80V ––– 15 VGS = 10V , See Fig. 6 and 13 ––– 58 11 ––– VDD = 50V 56 ––– ID =22A ns 45 ––– RG= 3.6 40 ––– RD= 2.9See Fig. 10 Between lead, 4.5 ––– 6mm (0.25in.) nH   from package 7.5 ––– and center of die contact 1900 ––– VGS = 0V 450 ––– V = 25V pF   DS ƒ = 1.0MHz, See Fig. 5 230 ––– 12 ––– ƒ = 1.0MHz Min. Typ. ––– ––– Max. Units ––– ––– 140 ––– ––– 1.3 V Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C,IS = 13A,VGS = 0V  ––– 180 270 ns TJ = 25°C ,IF = 22A ––– 1.2 1.8 C di/dt = 100A/µs  24 A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:       Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) starting TJ = 25°C, L = 1.0mH, RG = 25, IAS = 22A (See fig. 12) ISD 22A, di/dt 180A/µs, VDD V(BR)DSS, TJ  175°C. Pulse width 300µs; duty cycle  2%. t=60s, ƒ=60Hz Uses IRF1310N data and test conditions. 2 2017-04-27 IRFI1310NPbF   Fig. 1 Typical Output Characteristics Fig. 3 Typical Transfer Characteristics 3 Fig. 2 Typical Output Characteristics Fig. 4 Normalized On-Resistance vs. Temperature 2017-04-27 IRFI1310NPbF   Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 Typical Source-to-Drain Diode Forward Voltage   4 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area 2017-04-27 IRFI1310NPbF   25 ID , Drain Current (A) 20 15 10 Fig 10a. Switching Time Test Circuit 5 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJC) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.00001 PDM 0.02 t1 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x ZthJC + TC 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2017-04-27 IRFI1310NPbF   15V L VDS DRIVER D.U.T RG + V - DD IAS 20V tp A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Fig 13a. Gate Charge Waveform   6 Fig 13b. Gate Charge Test Circuit 2017-04-27 IRFI1310NPbF   Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs   7 2017-04-27 IRFI1310NPbF   TO-220 Full-Pak Package Outline (Dimensions are shown in millimeters (inches)) TO-220 Full-Pak Part Marking Information TO-220AB Full-Pak packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to website at http://www.irf.com/package/   8 2017-04-27 IRFI1310NPbF   Qualification Information  Industrial (per JEDEC JESD47F) † Qualification Level   TO-220 Full-Pak Moisture Sensitivity Level   N/A Yes RoHS Compliant † Applicable version of JEDEC standard at the time of product release. Revision History Date Comments 5/27/2016   Updated datasheet with corporate template. Added disclaimer on last page. 04/27/2017  Corrected Package Outline on page 8. Trademarks of Infineon Technologies AG µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ Trademarks updated November 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2016-04-19 Published by Infineon Technologies AG 81726 Munich, Germany © 2016 Infineon Technologies AG. All Rights Reserved. Do you have a question about this document? Email: erratum@infineon.com Document reference ifx1 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.   9 For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 2017-04-27