IRFI3205PbF
Advanced Process Technology
Ultra Low On-Resistance
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Lead-Free
HEXFET® Power MOSFET
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 Fullpak eliminates the need for additional insulating
hardware in commercial-industrial applications. The moulding
compound used provides a high isolation capability and a low
thermal resistance between the tab and external heatsink. This
isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing.
Base Part Number
Package Type
IRFI3205PbF
TO-220 Full-Pak
Absolute Maximum Ratings
Symbol
VDSS
55V
RDS(on)
0.008
ID
64A
G
G
Gate
D
Drain
Standard Pack
Form
Quantity
Tube
50
IRFI3205PbF
Parameter
Max.
Continuous Drain Current, VGS @ 10V
64
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
45
390
63
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
0.42
± 20
1
Parameter
S
Source
Orderable Part Number
ID @ TC = 25°C
Thermal Resistance
Symbol
Junction-to-Case
RJC
Junction-to-Ambient
RJA
S
TO-220 Full-Pak
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
D
Units
A
W
480
59
6.3
5.0
-55 to + 175
W/°C
V
mJ
A
mJ
V/ns
°C
300
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
2.4
65
Units
°C/W
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IRFI3205PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
IGSS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
C
Drain to Sink Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
ton
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
55
–––
–––
V VGS = 0V, ID = 250µA
––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.008
VGS = 10V, ID = 34A
2.0
–––
4.0
V VDS = VGS, ID = 250µA
42
–––
–––
S VDS = 25V, ID = 59A
––– –––
25
VDS = 55V, VGS = 0V
µA
––– –––
250
VDS = 44V,VGS = 0V,TJ =150°C
––– –––
100
VGS = 20V
nA
––– ––– -100
VGS = -20V
––– –––
170
ID = 59A
nC VDS = 44V
––– –––
32
VGS = 10V , See Fig. 6 and 13
––– –––
74
–––
14
–––
VDD = 28V
––– 100
–––
ID = 59A
ns
–––
43
–––
RG= 2.5
–––
70
–––
RD= 0.39See Fig. 10
Between lead,
–––
4.5
–––
6mm (0.25in.)
nH
from package
–––
7.5
–––
and center of die contact
––– 4000 –––
VGS = 0V
––– 1300 –––
V = 25V
pF DS
ƒ = 1.0MHz, See Fig. 5
––– 480
–––
–––
12
–––
ƒ = 1.0MHz
Min.
Typ.
–––
–––
Max. Units
–––
–––
390
–––
–––
1.3
V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C,IS = 34A,VGS = 0V
–––
110
170
ns
TJ = 25°C ,IF = 59A
–––
450
680
nC
di/dt = 100A/µs
64
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 190H, RG = 25, IAS = 59A (See fig. 12)
ISD 59A, di/dt 290A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 300µs; duty cycle 2%.
t=60s, ƒ=60Hz
Uses IRF3205 data and test conditions.
2
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IRFI3205PbF
1000
100
4.5V
20µs PULSE WIDTH
TTCJ = 25°C
10
0.1
1
10
100
4.5V
100
2.0
TJ = 175°C
10
V DS = 25V
20µs PULSE WIDTH
6
7
8
9
VGS , Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25°C
5
10
A
100
Fig. 2 Typical Output Characteristics
1000
1
1
VDS , Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
100
20µs PULSE WIDTH
TTCJ = 175°C
10
0.1
A
VDS , Drain-to-Source Voltage (V)
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
1000
10
A
I D = 98A
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig. 4 Normalized On-Resistance
vs. Temperature
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IRFI3205PbF
8000
6000
V GS , Gate-to-Source Voltage (V)
7000
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = Cds + C gd
Ciss
5000
Coss
4000
3000
2000
Crss
1000
0
1
10
100
I D = 59A
V DS = 44V
V DS = 28V
V DS = 11V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
VDS , Drain-to-Source Voltage (V)
60
90
120
150
180
A
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
10µs
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
30
TJ = 175°C
100
TJ = 25°C
VGS = 0V
10
0.6
1.0
1.4
1.8
2.2
2.6
VSD , Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
A
3.0
100
100µs
1ms
10
10ms
TC = 25°C
TJ = 175°C
Single Pulse
1
1
A
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFI3205PbF
70
ID , Drain Current (A)
60
50
40
Fig 10a. Switching Time Test Circuit
30
20
10
0
25
50
75
100
125
TC , Case Temperature
150
175
( °C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC)
10
1
D = 0.50
0.20
0.10
PDM
0.05
0.1
t1
0.02
t2
0.01
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x ZthJC + TC
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
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IRFI3205PbF
15V
L
VDS
DRIVER
D.U.T
RG
+
V
- DD
IAS
20V
tp
A
0.01
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
1200
TOP
1000
BOTTOM
800
600
400
200
0
VDD = 25V
25
V(BR)DSS
tp
ID
24A
42A
59A
50
75
100
125
150
A
175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Gate Charge Waveform
6
Fig 13b. Gate Charge Test Circuit
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IRFI3205PbF
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
7
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IRFI3205PbF
TO-220 Full-Pak Package Outline (Dimensions are shown in millimeters (inches))
TO-220 Full-Pak Part Marking Information
TO-220AB Full-Pak packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to website at http://www.irf.com/package/
8
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IRFI3205PbF
Qualification Information
Industrial
(per JEDEC JESD47F) †
Qualification Level
TO-220 Full-Pak
Moisture Sensitivity Level
N/A
Yes
RoHS Compliant
†
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
04/27/2017
Comments
Changed datasheet with Infineon logo - all pages.
Corrected Package Outline on page 8.
Added disclaimer on last page.
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™,
CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™,
GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™,
OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID
FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2016-04-19
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: erratum@infineon.com
Document reference
ifx1
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this
document is subject to customer’s compliance
with its obligations stated in this document and
any applicable legal requirements, norms and
standards concerning customer’s products and
any use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility
of
customer’s
technical
departments to evaluate the suitability of the
product for the intended application and the
completeness of the product information given in
this document with respect to such application.
9
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
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of
Infineon
Technologies, Infineon Technologies’ products
may not be used in any applications where a
failure of the product or any consequences of the
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personal injury.
2017-04-27
