IRFI4227PbF
Features
HEXFET® Power MOSFET
Advanced Process Technology
Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for
Reliable Operation
Short Fall & Rise Times for Fast Switching
150°C Operating Junction Temperature for
Improved Ruggedness
Repetitive Avalanche Capability for Robustness and
Reliability
Key Parameters
VDS max
200
V
VDS (Avalanche) typ.
240
V
RDS(ON) typ. @ 10V
21
m
IRP max @ TC= 100°C
47
A
TJ max
150
°C
G
D
S
TO-220 Full-Pak
G
Gate
D
Drain
S
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in
Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon
area and low EPULSE rating. Additional features of this MOSFET are 150°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable
device for PDP driving applications
Base Part Number
Package Type
IRFI4227PbF
TO-220 Full-Pak
Absolute Maximum Ratings
Symbol
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFI4227PbF
Parameter
Max.
± 30
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
26
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Repetitive Peak Current
17
100
47
PD @TC = 25°C
Maximum Power Dissipation
46
PD @TC = 100°C
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
TJ
TSTG
Thermal Resistance
Symbol
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1
Parameter
Units
V
A
W
18
0.37
W/°C
-40 to + 150
300
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
2.73
65
°C
Units
°C/W
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IRFI4227PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgd
td(on)
tr
td(off)
tf
tst
Parameter
Min.
Drain-to-Source Breakdown Voltage
200
Breakdown Voltage Temp. Coefficient
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
3.0
Gate Threshold Voltage Temp. Coefficient –––
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Forward Trans conductance
47
Total Gate Charge
–––
Gate-to-Drain Charge
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Shoot Through Blocking Time
100
EPULSE
Energy per Pulse
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
IDSS
IGSS
–––
–––
Ciss
Coss
Crss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
–––
–––
–––
–––
LD
Internal Drain Inductance
–––
LS
Internal Source Inductance
–––
Typ.
–––
240
21
–––
-11
–––
–––
–––
–––
–––
73
21
17
19
11
29
–––
Max. Units
Conditions
–––
V VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
25
m VGS = 10V, ID = 17A
5.0
V
VDS = VGS, ID = 250µA
––– mV/°C
20
µA VDS = 200V, VGS = 0V
1.0
mA VDS = 200V,VGS = 0V,TJ =150°C
100
VGS = 20V
nA
-100
VGS = -20V
–––
S VDS = 25V, ID = 17A
110
I = 17A,VDS = 100V
nC D
VGS = 10V
–––
–––
VDD = 100V, VGS = 10V
–––
ns ID = 17A
–––
RG= 2.5
See Fig. 22
–––
–––
ns VDD = 160V,VGS = 15V,RG= 4.7
L = 220nH, C = 0.4µF, VGS = 15V
570
–––
VDD = 160V, RG= 4.7TJ = 25°C
µJ
L = 220nH, C = 0.4µF, VGS = 15V
910
–––
VDD = 160V, RG= 4.7TJ = 100°C
4600 –––
VGS = 0V
460
–––
VDS = 25V
pF
ƒ = 1.0MHz
91
–––
360
–––
VGS = 0V, VDS = 20V to 160V
Between lead,
4.5
–––
6mm (0.25in.)
nH
from package
7.5
–––
and center of die contact
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy
EAR
Repetitive Avalanche Energy
VDS(Avalanche)
Repetitive Avalanche Voltage
IAS
Avalanche Current
Diode Characteristics
Parameter
Continuous Source Current
IS @ TC = 25°C
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
Typ.
–––
–––
240
–––
Min.
Typ.
Max. Units
–––
–––
26
–––
–––
100
–––
–––
1.3
Max.
54
4.6
–––
16
Units
mJ
V
A
V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C,IS = 17A,VGS = 0V
A
trr
Reverse Recovery Time
–––
93
140
ns
TJ = 25°C ,IF = 17A, VDD = 50V
Qrr
Reverse Recovery Charge
–––
350
520
nC
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
starting TJ = 25°C, L = 0.44mH, RG = 25, IAS = 16A.
Pulse width 400µs; duty cycle 2%.
Rθ is measured at TJ of approximately 90°C.
Half sine wave with duty cycle = 0.25, ton=1μsec.
2
2017-04-27
IRFI4227PbF
BOTTOM
100
VGS
15V
10V
8.0V
7.0V
VGS
15V
10V
8.0V
7.0V
TOP
7.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
10
BOTTOM
100
7.0V
10
60µs PULSE WIDTH
Tj = 150°C
60µs PULSE WIDTH
Tj = 25°C
0.1
1
10
0.1
100
Fig. 1. Typical Output Characteristics
100
Fig. 2. Typical Output Characteristics
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1000.0
VDS = 25V
ID, Drain-to-Source Current)
10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
60µs PULSE WIDTH
100.0
TJ = 150°C
10.0
1.0
TJ = 25°C
0.1
ID = 17A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
0.0
3.0
4.0
5.0
6.0
7.0
8.0
-60 -40 -20
VGS, Gate-to-Source Voltage (V)
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
Fig. 4. Normalized On-Resistance vs. Temperature
Fig. 3. Typical Transfer Characteristics
1000
1000
L = 220nH
C = 0.4µF
100°C
25°C
800
L = 220nH
C = Variable
100°C
25°C
800
Energy per pulse (µJ)
900
Energy per pulse (µJ)
1
700
600
500
400
600
400
200
300
200
0
100
110
120
130
140
150
160
170
VDS, Drain-to -Source Voltage (V)
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
3
130
140
150
160
170
180
190
ID, Peak Drain Current (A)
Fig 6. Typical EPULSE vs. Drain Current
2017-04-27
IRFI4227PbF
1000.0
1400
L = 220nH
ISD , Reverse Drain Current (A)
Energy per pulse (µJ)
1200
C= 0.4µF
C= 0.3µF
C= 0.2µF
1000
800
600
400
TJ = 150°C
100.0
10.0
TJ = 25°C
1.0
200
VGS = 0V
0.1
0
25
50
75
100
125
0.2
150
Temperature (°C)
Fig. 7. Typical EPULSE vs. Temperature
8000
C, Capacitance (pF)
VGS, Gate-to-Source Voltage (V)
Coss = Cds + Cgd
Ciss
4000
Coss
2000
Crss
1
1.0
1.2
1.4
ID= 17A
VDS = 160V
16
VDS = 100V
VDS = 40V
12
8
4
10
100
0
1000
20
40
60
80
100
120
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage
30
1000
ID, Drain-to-Source Current (A)
ID , Drain Current (A)
0.8
0
0
20
10
0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
1µsec
10µsec
10
100µsec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
25
50
75
100
125
150
TC , CaseTemperature (°C)
Fig 11. Maximum Drain Current vs. Case Temperature
4
0.6
Fig 8. Typical Source-Drain Diode Forward Voltage
20
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
6000
0.4
VSD , Source-to-Drain Voltage (V)
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 12. Maximum Safe Operating Area
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IRFI4227PbF
240
0.16
EAS, Single Pulse Avalanche Energy (mJ)
RDS (on), Drain-to -Source On Resistance ()
ID = 17A
0.12
0.08
TJ = 125°C
0.04
TJ = 25°C
ID
2.5A
3.0A
BOTTOM 16A
TOP
200
160
120
80
40
0
0.00
5
6
7
8
9
25
10
50
100
125
150
Starting TJ, Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig. 14. Maximum Avalanche Energy Vs. Temperature
Fig. 13. On-Resistance Vs. Gate Voltage
80
5.0
4.5
Repetitive Peak Current (A)
VGS(th) Gate threshold Voltage (V)
75
ID = 250µA
4.0
3.5
3.0
ton= 1µs
Duty cycle = 0.25
Half Sine Wave
Square Pulse
60
40
20
2.5
2.0
0
-75
-50
-25
0
25
50
75
100
125
150
25
50
TJ , Temperature ( °C )
75
100
125
150
Case Temperature (°C)
Fig. 15. Threshold Voltage vs. Temperature
Fig. 16. Typical Repetitive peak Current vs.
Case temperature
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.1
J
0.02
0.01
R1
R1
J
1
R2
R2
R3
R3
C
2
1
2
3
3
Ci= iRi
Ci= iRi
0.01
SINGLE PULSE
( THERMAL RESPONSE )
C
Ri (°C/W)
i (sec)
0.44978
0.000177
0.9085
0.105329
1.3717
2.0127
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
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IRFI4227PbF
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 19a. Unclamped Inductive Test Circuit
Fig 20a. Gate Charge Test Circuit
6
Fig 19b. Unclamped Inductive Waveforms
Fig 20b. Gate Charge Waveform
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IRFI4227PbF
Fig 21a. tst and EPULSE Test Circuit
Fig 21b. tst Test Waveforms
Fig 21c. EPULSE Test Waveforms
Fig 22a. Switching Time Test Circuit
7
Fig 22b. Switching Time Waveforms
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IRFI4227PbF
TO-220 Full-Pak Package Outline (Dimensions are shown in millimeters (inches))
TO-220 Full-Pak Part Marking Information
TO-220AB Full-Pak packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to website at http://www.irf.com/package/
8
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IRFI4227PbF
Qualification Information
Industrial
(per JEDEC JESD47F) †
Qualification Level
TO-220 Full-Pak
Moisture Sensitivity Level
N/A
Yes
RoHS Compliant
†
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
04/27/2017
Comments
Changed datasheet with Infineon logo - all pages.
Corrected Package Outline on page 8.
Added disclaimer on last page.
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™,
CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™,
GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™,
OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID
FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2016-04-19
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: erratum@infineon.com
Document reference
ifx1
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this
document is subject to customer’s compliance
with its obligations stated in this document and
any applicable legal requirements, norms and
standards concerning customer’s products and
any use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility
of
customer’s
technical
departments to evaluate the suitability of the
product for the intended application and the
completeness of the product information given in
this document with respect to such application.
9
For further information on the product, technology,
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contact your nearest Infineon Technologies office
(www.infineon.com).
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
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2017-04-27
