IRFI4321PbF
HEXFET® Power MOSFET
Applications
Motion Control Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
Hard Switched and High Frequency Circuits
Benefits
Low RDSON Reduces Losses
Low Gate Charge Improves the Switching Performance
Improved Diode Recovery Improves Switching & EMI Performance
30V Gate Voltage Rating Improves Robustness
Fully Characterized Avalanche SOA
VDSS
150V
RDS(on) typ.
12.2m
RDS(on) max.
16m
ID
34A
G
Package Type
IRFI4321PbF
TO-220 Full-Pak
Absolute Maximum Ratings
Symbol
D
Drain
Standard Pack
Form
Quantity
Tube
50
IRFI4321PbF
Parameter
Max.
Continuous Drain Current, VGS @ 10V
34
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
21
140
46
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
0.37
± 30
Thermal Resistance
Symbol
Parameter
Junction-to-Case
RJC
Junction-to-Ambient (PCB Mount)
RJA
1
S
Source
Orderable Part Number
ID @ TC = 25°C
VGS
EAS
TJ
TSTG
S
TO-220 Full-Pak
G
Gate
Base Part Number
D
Units
A
W
170
-55 to + 150
W/°C
V
mJ
°C
300
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
2.73
65
Units
°C/W
2017-04-27
IRFI4321PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
RG(int)
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Forward Trans conductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
td(on)
Turn-On Delay Time
Rise Time
tr
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
Min.
150
–––
–––
3.0
–––
–––
–––
–––
–––
Typ.
–––
190
12.2
–––
–––
–––
–––
–––
0.8
Max. Units
–––
V
––– mV/°C
16
m
5.0
V
20
µA
1.0
mA
100
nA
-100
–––
50
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
73
24
20
18
29
27
20
4440
390
84
–––
S VDS = 50V, ID = 20A
110
ID = 20A
––– nC VDS = 75V
VGS = 10V
–––
–––
VDD = 75V
–––
ID = 20A
ns
–––
RG= 2.5
VGS = 10V
–––
–––
VGS = 0V
––– pF VDS = 50V
ƒ = 1.0MHz
–––
Max. Units
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 20A
VDS = VGS, ID = 250µA
VDS = 150 V, VGS = 0V
VDS = 150V,VGS = 0V,TJ =125°C
VGS = 20V
VGS = -20V
Min.
Typ.
–––
–––
34
–––
–––
140
–––
–––
1.3
V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C,IS = 20A,VGS = 0V
IF = 20A
A
trr
Reverse Recovery Time
–––
86
130
ns
Qrr
IRRM
Reverse Recovery Charge
Reverse Recovery Current
–––
–––
310
6.7
470
–––
nC VR = 128V
A di/dt= 100A/µs
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.85mH, RG = 25, IAS = 20A, VGS =10V. Part not recommended for use above this value.
Pulse width 400µs; duty cycle 2%.
R is measured at TJ approximately 90°C.
2
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IRFI4321PbF
1000
1000
100
BOTTOM
10
1
5.0V
60µs PULSE WIDTH
Tj = 25°C
0.1
100
BOTTOM
10
5.0V
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
0.1
VDS , Drain-to-Source Voltage (V)
10
100
Fig. 2 Typical Output Characteristics
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1000
VDS = 25V
ID, Drain-to-Source Current)
1
VDS , Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
60µs PULSE WIDTH
100
TJ = 150°C
10
TJ = 25°C
1
ID = 20A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
0.0
0.1
3.0
4.0
5.0
6.0
-60 -40 -20
7.0
Fig. 3 Typical Transfer Characteristics
7000
20
VGS, Gate-to-Source Voltage (V)
Coss = Cds + Cgd
5000
Ciss
4000
3000
20
40
60
80 100 120 140 160
Fig. 4 Normalized On-Resistance vs. Temperature
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
6000
0
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
Coss
2000
1000
ID= 20A
VDS = 120V
16
VDS= 75V
VDS= 30V
12
8
4
Crss
0
0
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
0
20
40
60
80
100
120
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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IRFI4321PbF
1000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000
100
TJ = 150°C
10
1
TJ = 25°C
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
1msec
100µsec
10
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.1
0.2
0.4
0.6
0.8
1.0
0.1
VSD , Source-to-Drain Voltage (V)
ID , Drain Current (A)
30
25
20
15
10
5
0
50
75
100
125
100.0
1000.0
150
190
180
170
160
150
140
-60 -40 -20
TC , CaseTemperature (°C)
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
Fig. 9. Maximum Drain Current vs. Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
5.0
EAS, Single Pulse Avalanche Energy (mJ)
700
4.0
Energy (µJ)
10.0
Fig 8. Maximum Safe Operating Area
V(BR)DSS , Drain-to-Source Breakdown Voltage
35
25
1.0
VDS , Drain-toSource Voltage (V)
Fig. 7. Typical Source-to-Drain Diode Forward Voltage
3.0
2.0
1.0
0.0
40
60
80
100
120
140
VDS, Drain-to-Source Voltage (V)
Fig. 11. Typical COSS Stored Energy
4
DC
160
ID
4.6A
5.4A
BOTTOM 20A
600
TOP
500
400
300
200
100
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. Drain Current
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IRFI4321PbF
Thermal Response ( Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
J
R1
R1
J
1
R2
R2
R3
R3
Ri (°C/W)
C
2
1
2
3
3
Ci= iRi
Ci= iRi
0.01
(sec)
0.312941 0.000381
1.187255 0.219458
1.231176
2.895
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
10
0.01
0.05
0.10
1
0.1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
tav (sec)
Fig 14. Single Avalanche Event: Pulse Current vs. Pulse Width
180
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 20A
EAR , Avalanche Energy (mJ)
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
5
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IRFI4321PbF
40
ID = 1.0A
ID = 1.0mA
5.0
ID = 250µA
30
4.0
IRRM - (A)
VGS(th), Gate threshold Voltage (V)
6.0
3.0
20
IF = 33A
VR = 128V
10
2.0
TJ = 125°C
TJ = 25°C
0
1.0
-75 -50 -25
0
25
50
75
100 200 300 400 500 600 700 800 900 1000
100 125 150 175
dif / dt - (A / µs)
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
Fig 17. Typical Recovery Current vs. dif/dt
40
3200
2800
2400
QRR - (nC)
IRRM - (A)
30
20
10
0
IF = 50A
VR = 128V
2000
1600
1200
IF = 33A
VR = 128V
800
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
400
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
dif / dt - (A / µs)
Fig 18. Typical Recovery Current vs. dif/dt
Fig 19. Typical Stored Charge vs. dif/dt
3200
2800
QRR - (nC)
2400
2000
1600
1200
800
400
0
IF = 50A
VR = 128V
TJ = 125°C
TJ = 25°C
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
Fig 20. Typical Stored Charge vs. dif/dt
6
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IRFI4321PbF
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
0.01
Fig 22a. Unclamped Inductive Test Circuit
Fig 23a. Switching Time Test Circuit
I AS
Fig 22b. Unclamped Inductive Waveforms
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 24a. Gate Charge Test Circuit
7
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
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IRFI4321PbF
TO-220 Full-Pak Package Outline (Dimensions are shown in millimeters (inches))
TO-220 Full-Pak Part Marking Information
TO-220AB Full-Pak packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to website at http://www.irf.com/package/
8
2017-04-27
IRFI4321PbF
Qualification Information
Industrial
(per JEDEC JESD47F) †
Qualification Level
TO-220 Full-Pak
Moisture Sensitivity Level
N/A
Yes
RoHS Compliant
†
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
04/27/2017
Comments
Changed datasheet with Infineon logo - all pages.
Corrected Package Outline on page 8.
Added disclaimer on last page.
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™,
CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™,
GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™,
OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID
FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2016-04-19
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: erratum@infineon.com
Document reference
ifx1
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this
document is subject to customer’s compliance
with its obligations stated in this document and
any applicable legal requirements, norms and
standards concerning customer’s products and
any use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility
of
customer’s
technical
departments to evaluate the suitability of the
product for the intended application and the
completeness of the product information given in
this document with respect to such application.
9
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
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Technologies, Infineon Technologies’ products
may not be used in any applications where a
failure of the product or any consequences of the
use thereof can reasonably be expected to result in
personal injury.
2017-04-27
