IRFB41N15DPbF
IRFIB41N15DPbF
IRFS41N15DPbF
IRFSL41N15DPbF
HEXFET® Power MOSFET
Applications
High frequency DC-DC converters
Benefits
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See App.
Note AN1001)
Fully Characterized Avalanche Voltage
and Current
Lead-Free
S
D
G
IRFB41N15DPbF
IRFSL41N15DPbF
IRFIB41N15DPbF
TO-220
TO-262
TO-220 Full-Pak
IRFS41N15DPbF
D2-Pak
Absolute Maximum Ratings
Symbol
RDS(on) max
0.045
ID
41A
D
S
S
D
G
G
G
D2 Pak
IRFS41N15DPbF
TO-220 Full-Pak
IRFB41N15DPbF
G
Gate
Package Type
150V
D
TO-220AB
IRFB41N15DPbF
Base part number
VDSS
D
Drain
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
S
D
TO-262 Pak
IRFSL41N15DPbF
S
Source
Orderable Part Number
IRFB41N15DPbF
IRFSL41N15DPbF
IRFIB41N15DPbF
IRFS41N15DPbF
IRFS41N15DTRLPbF
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
41
ID @ TC = 100°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation D2-Pak
29
164
3.1
A
PD @TC = 25°C
Maximum Power Dissipation TO-220
200
W
PD @TC = 25°C
Maximum Power Dissipation TO-220 Full-Pak
Linear Derating FactorTO-220
Linear Derating FactorTO-220 Full-Pak
Gate-to-Source Voltage
48
1.3
0.32
± 30
W/°C
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
2.7
VGS
dv/dt
TJ
TSTG
Thermal Resistance
Symbol
RJC
RJC
RCS
RJA
RJA
RJA
1
Parameter
Junction-to-Case
Junction-to-Case, TO-220 Full-Pak
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient,TO-220
Junction-to-Ambient,D2-Pak
Junction-to-Ambient, TO-220 Full-Pak
V
V/ns
-55 to + 175
300
10 lbf•in (1.1N•m)
°C
Typ.
Max.
Units
–––
–––
0.50
–––
–––
–––
0.75
3.14
–––
62
40
65
°C/W
2017-04-27
IRFB/IB/S/SL41N15DPbF
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Forward Trans conductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
Min.
150
–––
–––
3.0
–––
–––
–––
–––
Typ. Max. Units
Conditions
–––
–––
V VGS = 0V, ID = 250µA
0.17 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.045
VGS = 10V, ID = 25A
–––
5.5
V VDS = VGS, ID = 250µA
–––
25
VDS = 150 V, VGS = 0V
µA
–––
250
VDS = 120V,VGS = 0V,TJ =150°C
–––
100
VGS = 30V
nA
-100
VGS = -30V
18
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
72
21
35
16
63
25
14
2520
510
110
3090
230
250
–––
110
31
52
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
VDS = 50V, ID = 25A
ID = 25A
nC VDS = 120V
VGS = 10V
VDD = 75V
ID = 25A
ns
RG= 2.5
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
pF
VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
VGS = 0V, VDS = 120V ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V
Avalanche Characteristics
Parameter
EAS
IAR
EAR
Typ.
–––
–––
–––
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min.
Typ.
–––
–––
41
–––
–––
164
–––
–––
–––
–––
170
1.3
1.3
260
1.9
Max.
470
25
20
Units
mJ
A
mJ
Max. Units
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 25A,VGS = 0V
ns TJ = 25°C ,IF = 25A
C di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
starting TJ = 25°C, L = 1.5mH, RG = 25, IAS = 25A.
ISD 25A, di/dt 340A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 300µs; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
This is only applied to TO-220AB package.
This is applied to D2Pak, when mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
2
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IRFB/IB/S/SL41N15DPbF
I D , Drain-to-Source Current (A)
TOP
BOTTOM
100
1000
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
6.0V
TOP
I D , Drain-to-Source Current (A)
1000
10
1
10
BOTTOM
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
100
TJ = 175 ° C
TJ = 25 ° C
V DS= 25V
20µs PULSE WIDTH
7
8
9
10
VGS , Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
10
100
Fig. 2 Typical Output Characteristics
1000
6
1
VDS , Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
1
20µs PULSE WIDTH
TJ = 175 ° C
1
0.1
100
VDS , Drain-to-Source Voltage (V)
10
6.0V
10
20µs PULSE WIDTH
TJ = 25 ° C
6.0V
1
0.1
100
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
6.0V
11
ID = 41A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig. 4 Normalized On-Resistance
vs. Temperature
2017-04-27
IRFB/IB/S/SL41N15DPbF
20
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd , C ds
C rss
= C gd
C oss = C ds + C gd
10000
C, Capacitance(pF)
SHORTED
VGS , Gate-to-Source Voltage (V)
100000
Ciss
1000
Coss
100
Crss
12
8
4
0
10
100
VDS = 120V
VDS = 75V
VDS = 30V
16
10
1
ID = 25A
1000
FOR TEST CIRCUIT
SEE FIGURE 13
0
20
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
ISD , Reverse Drain Current (A)
60
80
100
120
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
100
TJ = 175 °C
10us
100
10
TJ = 25 °C
100us
10
1ms
1
0.1
0.2
V GS = 0 V
0.6
1.0
1.4
VSD ,Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
40
QG, Total Gate Charge (nC)
1
1.8
10ms
TC = 25 °C
TJ = 175 °C
Single Pulse
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
2017-04-27
IRFB/IB/S/SL41N15DPbF
50
ID , Drain Current (A)
40
30
20
Fig 10a. Switching Time Test Circuit
10
0
25
50
75
100
125
TC , Case Temperature
150
175
( ° C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.1
0.01
0.00001
PDM
0.10
t1
0.05
0.02
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2017-04-27
IRFB/IB/S/SL41N15DPbF
EAS , Single Pulse Avalanche Energy (mJ)
1200
15V
1000
L
VDS
DRIVER
D.U.T
RG
+
V
- DD
IAS
20V
tp
A
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
ID
10A
21A
25A
TOP
BOTTOM
800
600
400
200
0
25
50
75
100
125
150
Starting T ,J Junction Temperature
175
( °C)
tp
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Gate Charge Waveform
6
Fig 13b. Gate Charge Test Circuit
2017-04-27
IRFB/IB/S/SL41N15DPbF
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
7
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IRFB/IB/S/SL41N15DPbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
EXAM PLE:
T H IS IS A N IR F 1 0 1 0
LO T C O D E 1789
ASSEM BLED O N W W 19, 2000
IN T H E A S S E M B L Y L IN E "C "
N o t e : "P " in a s s e m b ly lin e p o s it io n
in d ic a t e s "L e a d - F r e e "
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
ASSEM BLY
LO T C O D E
PART NUM BER
D ATE C O D E
YEA R 0 = 2000
W EEK 19
L IN E C
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to website at http://www.irf.com/package/
8
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IRFB/IB/S/SL41N15DPbF
TO-220 Full-Pak Package Outline (Dimensions are shown in millimeters (inches))
TO-220 Full-Pak Part Marking Information
TO-220AB Full-Pak packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to website at http://www.irf.com/package/
9
2017-04-27
IRFB/IB/S/SL41N15DPbF
(Dimensions are
D2-Pak (TO-263AB) Package Outline
shown in millimeters (inches))
D2-Pak (TO-263AB) Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
F530S
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
ASSEMBLY
LOT CODE
OR
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
F530S
DATE CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
YEAR 0 = 2000
WEEK 02
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to website at http://www.irf.com/package/
10
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IRFB/IB/S/SL41N15DPbF
TO-262 Package Outline (Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
ASSEMBLED ON WW19, 1997
IN THE ASSEMBLYLINE "C"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
OR
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
WEEK 19
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to website at http://www.irf.com/package/
11
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IRFB/IB/S/SL41N15DPbF
D2-Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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IRFB/IB/S/SL41N15DPbF
Qualification Information
Industrial
(per JEDEC JESD47F) †
Qualification Level
TO-220AB
N/A
TO-220 Full-Pak
Moisture Sensitivity Level
TO-262
MSL1
(per JEDEC J-STD-020D) ††
Yes
D2-Pak
RoHS Compliant
†
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
04/27/2017
Comments
Changed datasheet with Infineon logo - all pages.
Corrected Package Outline on page 8,9,10,11.
Added disclaimer on last page.
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™,
CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™,
GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™,
OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID
FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2016-04-19
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: erratum@infineon.com
Document reference
ifx1
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this
document is subject to customer’s compliance
with its obligations stated in this document and
any applicable legal requirements, norms and
standards concerning customer’s products and
any use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility
of
customer’s
technical
departments to evaluate the suitability of the
product for the intended application and the
completeness of the product information given in
this document with respect to such application.
13
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
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of
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Technologies, Infineon Technologies’ products
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personal injury.
2017-04-27
