IRFIZ46N

PD - 9.1306A IRFIZ46N HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. ID = 33A S The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current † Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚† Avalanche Current† Repetitive Avalanche Energy† Peak Diode Recovery dv/dt ƒ† Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. 33 23 180 45 0.3 ±20 230 16 4.5 5.0 -55 to + 175 Units A W W/°C V mJ A mJ V/ns °C 300 (1.6mm from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient Min. Typ. Max. Units –––– –––– –––– –––– 3.3 65 °C/W 8/25/97 IRFIZ46N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS Drain-to-Source Leakage Current Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Internal Source Inductance Ciss Coss Crss C Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance IGSS Min. 55 ––– ––– 2.0 16 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 0.017 ––– V/°C Reference to 25°C, ID = 1mA† ––– 0.020 Ω VGS = 10V, ID = 19A „ ––– 4.0 V VDS = VGS , ID = 250µA ––– ––– S VDS = 25V, ID = 28A† ––– 25 VDS = 55V, VGS = 0V µA ––– 250 VDS = 44V, VGS = 0V, T J = 150°C ––– 100 VGS = 20V nA ––– -100 VGS = -20V ––– 61 ID = 28A ––– 13 nC VDS = 44V ––– 24 VGS = 10V, See Fig. 6 and 13 „† 12 ––– VDD = 28V 80 ––– ID = 28A ns 43 ––– RG = 12Ω 52 ––– RD = 0.98Ω, See Fig. 10 „† Between lead, ––– 4.5 ––– 6mm (0.25in.) nH from package ––– ––– ––– 7.5 ––– and center of die contact ––– 1500 ––– VGS = 0V ––– 450 ––– VDS = 25V pF ––– 160 ––– ƒ = 1.0MHz, See Fig. 5† ––– 12 ––– ƒ = 1.0MHz D G S Source-Drain Ratings and Characteristics IS I SM V SD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) † Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– 33 ––– ––– 180 ––– ––– ––– ––– 72 210 1.3 110 310 A V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 19A, VGS = 0V „ TJ = 25°C, IF = 28A di/dt = 100A/µs „† Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ VDD = 25V, starting TJ = 25°C, L = 410µH RG = 25Ω, IAS = 28A. (See Figure 12) ƒ ISD ≤ 28A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS, „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … t=60s, ƒ=60Hz † Uses IRFZ46N data and test conditions TJ ≤ 175°C D G S IRFIZ46N 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP I , D ra in -to -S o u rce C u rre n t (A ) D I , D ra in -to -S o u rce C u rre n t (A ) D TOP 100 10 4.5 V 2 0µ s PU LSE W ID TH TTCJ = 2 5°C 1 0.1 1 10 100 4 .5V 10 20 µs P UL SE W IDTH TTCJ = 17 5°C 1 A 0.1 100 1 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 2.5 R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d ) I D , D r ain- to-S ourc e C urre nt (A ) 1000 TJ = 2 5 ° C TJ = 1 7 5 ° C 10 V DS = 2 5 V 2 0 µ s P U L SE W ID TH 1 4 5 6 7 8 9 A 100 V D S , Drain-to-Source V oltage (V) V D S , D rain-to-S ource V oltage (V ) 100 10 10 V G S , Ga te-to-S o urce V oltage (V ) Fig 3. Typical Transfer Characteristics A I D = 2 8A 2.0 1.5 1.0 0.5 V G S = 10 V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 180 T J , Junction T em perature (°C ) Fig 4. Normalized On-Resistance Vs. Temperature IRFIZ46N V GS C is s C rs s C o ss C , C a p a c ita n c e (p F ) 2400 20 = 0 V, f = 1M H z = C gs + C gd , Cds SH O RTE D = C gd = C ds + C g d V G S , G a te -to -S o u rc e V o lta g e (V ) 2800 12 1600 C os s 1200 800 C rs s 400 0 10 8 4 FO R TES T C IR CU IT SEE FIG U R E 13 0 A 1 0 100 10 20 30 40 50 V D S , Drain-to-Source V oltage (V) Q G , Total Gate Charge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage A 60 1000 1000 OPE R ATIO N IN TH IS A RE A LIMITE D BY R D S(o n) I D , D ra in C u rre n t (A ) I S D , R e v e rse D ra in C u rre n t (A ) V DS = 4 4V V DS = 2 8V 16 C is s 2000 I D = 2 8A 100 T J = 17 5°C T J = 25 °C 10 VG S = 0 V 1 0.4 0.8 1.2 1.6 2.0 V S D , S ource-to-Drain Voltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage A 2.4 1 0µs 100 1 00µs 10 1m s 10m s T C = 25 °C T J = 17 5°C S ing le Pulse 1 1 A 10 100 V D S , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area IRFIZ46N VGS 30 ID , Drain Current (A) RD VDS 35 D.U.T. RG + -VDD 25 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 15 Fig 10a. Switching Time Test Circuit VDS 10 90% 5 0 25 50 75 100 125 TC , Case Temperature 150 175 ( ° C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.00001 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1 IRFIZ46N L VDS D.U.T. RG + - VDD IAS 10 V tp 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD E A S , S in g le P u ls e A va la n c h e E n e rg y (m J) 500 TO P B OTTO M 400 ID 11 A 2 0A 28 A 300 200 100 VD D = 2 5V 0 25 50 A 75 100 125 150 Starting T J , Junction Temperature (°C) VDS Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF QG .3µF 10 V QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 175 IRFIZ46N Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ƒ + ‚ - - „ +  • • • • RG Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS ISD * IRFIZ46N Package Outline TO-220 FullPak Outline Dimensions are shown in millimeters (inches) 10.60 (.41 7) 10.40 (.40 9) ø 3.40 (.133 ) 3.10 (.123 ) 4.8 0 (.189) 4.6 0 (.181) -A 3.70 (.145) 3.20 (.126) 16 .0 0 (.630) 15 .8 0 (.622) 2 .80 (.110) 2 .60 (.102) LE AD A S SIGN M E N T S 1 - GA TE 2 - D R AIN 3 - SO U R C E 7 .10 (.280) 6 .70 (.263) 1.15 (.04 5) M IN . N O T ES : 1 D IM EN SION IN G & T O LER A N C IN G PE R AN S I Y14.5 M , 1982 1 2 3 2 C O N TR OLLIN G D IM EN S ION : IN C H . 3.30 (.130 ) 3.10 (.122 ) -B- 13 .7 0 (.540) 13 .5 0 (.530) C A 3X 1.40 (.05 5) 1.05 (.04 2) 0.9 0 (.035) 3X 0.7 0 (.028) 0.25 (.010 ) 3X M A M 0.48 (.019) 0.44 (.017) 2.85 (.112 ) 2.65 (.104 ) B 2 .54 (.100) 2X D B M IN IM U M C R E EP AG E D IST A NC E B ET W E EN A-B -C -D = 4.80 (.189 ) Part Marking Information TO-220 FullPak E XAM PLE : T HIS IS A N IRF I840G W ITH AS SE MBLY LOT CODE E401 A INT ER NAT IONA L RE CTIF IER PA RT NU MBE R IRF I840G LOGO E 401 9 24 5 AS SE MBLY LOT COD E D ATE CODE (YYW W ) YY = YE AR W W = W E EK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-KU, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/