IRFIZ46NPBF

PD - 95595 IRFIZ46NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. ID = 33A S The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current † Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚† Avalanche Current† Repetitive Avalanche Energy† Peak Diode Recovery dv/dt ƒ† Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. 33 23 180 45 0.3 ±20 230 16 4.5 5.0 -55 to + 175 Units A W W/°C V mJ A mJ V/ns °C 300 (1.6mm from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθJA www.irf.com Junction-to-Case Junction-to-Ambient Min. Typ. Max. Units –––– –––– –––– –––– 3.3 65 °C/W 1 07/23/04 IRFIZ46NPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 55 ––– ––– 2.0 16 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.017 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 12 80 43 52 LD Internal Drain Inductance ––– 4.5 LS Internal Source Inductance ––– ––– 7.5 Ciss Coss Crss C Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance ––– ––– ––– ––– 1500 450 160 12 V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA† 0.020 Ω VGS = 10V, ID = 19A „ 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 28A† 25 VDS = 55V, VGS = 0V µA 250 VDS = 44V, VGS = 0V, T J = 150°C 100 VGS = 20V nA -100 VGS = -20V 61 ID = 28A 13 nC VDS = 44V 24 VGS = 10V, See Fig. 6 and 13 „† ––– VDD = 28V ––– ID = 28A ns ––– RG = 12Ω ––– RD = 0.98Ω, See Fig. 10 „† Between lead, ––– 6mm (0.25in.) nH from package ––– ––– and center of die contact ––– VGS = 0V ––– VDS = 25V pF ––– ƒ = 1.0MHz, See Fig. 5† ––– ƒ = 1.0MHz D G S Source-Drain Ratings and Characteristics IS I SM V SD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) † Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– 33 ––– ––– 180 ––– ––– ––– ––– 72 210 1.3 110 310 A V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 19A, VGS = 0V „ TJ = 25°C, IF = 28A di/dt = 100A/µs „† D G S Notes:  Repetitive rating; pulse width limited by ‚ VDD = 25V, starting TJ = 25°C, L = 410µH ƒ ISD ≤ 28A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS, „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … t=60s, ƒ=60Hz † Uses IRFZ46N data and test conditions max. junction temperature. ( See fig. 11 ) TJ ≤ 175°C 2 R G = 25Ω, IAS = 28A. (See Figure 12) www.irf.com IRFIZ46NPbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D 100 10 4.5V 20µs PULSE WIDTH TCJ = 25°C T 1 0.1 1 10 A 100 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25°C TJ = 175°C 10 V DS = 25V 20µs PULSE WIDTH 6 7 8 9 10 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 A 100 Fig 2. Typical Output Characteristics 2.5 5 1 VDS , Drain-to-Source Voltage (V) 1000 1 20µs PULSE WIDTH TTCJ = 175°C 1 0.1 100 Fig 1. Typical Output Characteristics 100 4.5V 10 VDS , Drain-to-Source Voltage (V) 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP A I D = 28A 2.0 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFIZ46NPbF 2800 V GS , Gate-to-Source Voltage (V) 2400 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 12 1600 Coss 1200 800 Crss 400 0 10 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 A 1 100 0 10 20 30 40 50 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 A 60 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) I D , Drain Current (A) ISD , Reverse Drain Current (A) V DS = 44V V DS = 28V 16 Ciss 2000 I D = 28A 100 TJ = 175°C TJ = 25°C 10 VGS = 0V 1 0.4 0.8 1.2 1.6 2.0 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 A 2.4 10µs 100 100µs 10 1ms 10ms TC = 25°C TJ = 175°C Single Pulse 1 1 A 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFIZ46NPbF V GS 30 ID , Drain Current (A) RD VDS 35 RG D.U.T. + -V DD 25 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 15 Fig 10a. Switching Time Test Circuit VDS 10 90% 5 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 0.00001 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFIZ46NPbF D.U.T. RG + - VDD IAS 10 V tp 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD EAS , Single Pulse Avalanche Energy (mJ) L VDS 500 TOP BOTTOM 400 ID 11A 20A 28A 300 200 100 0 VDD = 25V 25 50 A 75 100 125 150 175 Starting TJ , Junction Temperature (°C) VDS Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform 6 ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFIZ46NPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D.U.T ƒ + ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFIZ46NPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432 AS S E MB L E D ON WW 24 1999 IN T H E AS S E MB L Y L IN E "K " P AR T N U MB E R IN T E R N AT IONAL R E CT IF IE R L OGO IR F I840G 924K 34 Note: "P" in assembly line position indicates "Lead-Free" AS S E MB L Y L OT CODE 32 D AT E COD E YE AR 9 = 1999 WE E K 24 L IN E K Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/