IRFL4310PBF

PD - 95144 IRFL4310PbF HEXFET® Power MOSFET l l l l l l l Surface Mount Dynamic dv/dt Rating Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance Lead-Free D VDSS = 100V RDS(on) = 0.20Ω G ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application. S O T -2 2 3 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 25°C VGS EAS IAR EAR dv/dt TJ, TSTG Max. Continuous Drain Current, VGS @ 10V** Continuous Drain Current, VGS @ 10V* Continuous Drain Current, VGS @ 10V* Pulsed Drain Current  Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy* Peak Diode Recovery dv/dt ƒ Junction and Storage Temperature Range Units 2.2 1.6 1.3 13 2.1 1.0 8.3 ± 20 47 1.6 0.10 5.0 -55 to + 150 A W W mW/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJA RθJA Junction-to-Amb. (PCB Mount, steady state)* Junction-to-Amb. (PCB Mount, steady state)** Typ. Max. Units 93 48 120 60 °C/W * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com 1 04/22/04 IRFL4310PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 100 ––– ––– V VGS = 0V, ID = 250µA ––– 0.12 ––– V/°C Reference to 25°C, I D = 1mA ––– ––– 0.20 Ω VGS = 10V, ID = 1.6A „ 2.0 1.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 4.0 ––– ––– ––– 25 ––– 250 ––– 100 ––– -100 17 25 2.1 3.1 7.8 12 7.8 ––– 18 ––– 34 ––– 20 ––– 330 ––– 92 ––– 54 ––– V S µA nA nC ns pF VDS = VGS, ID = 250µA VDS = 50V, ID = 0.80 A VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V ID = 1.6A VDS = 80V VGS = 10V, See Fig. 6 and 13 „ VDD = 50V ID = 1.6A RG = 6.2 Ω RD = 31 Ω, See Fig. 10 „ VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– 0.91 ––– ––– 13 ––– ––– ––– ––– 72 210 1.3 110 320 A V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 1.6A, VGS = 0V „ TJ = 25°C, IF = 1.6A di/dt = 100A/µs „ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚VDD = 25V, starting TJ = 25°C, L = 9.2 mH RG = 25Ω, IAS = 3.2A. (See Figure 12) 2 ƒ ISD ≤ 1.6A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C „ Pulse width ≤ 300µs; duty cycle ≤ 2%. www.irf.com IRFL4310PbF www.irf.com 3 IRFL4310PbF 4 www.irf.com IRFL4310PbF www.irf.com 5 IRFL4310PbF 6 www.irf.com IRFL4310PbF www.irf.com 7 IRFL4310PbF SOT-223 (TO-261AA) Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information HE XF E T PRODUCT MARKING T HIS IS AN IRF L014 INT E RNAT IONAL RE CT IF IE R L OGO PAR T NUMB E R F L014 314P T OP 8 L OT CODE AXXXX A = AS S E MB L Y S IT E DAT E CODE CODE (YYWW) YY = YE AR WW = WE E K P = DE S IGNAT E S LE AD-F RE E PRODUCT (OPT IONAL) B OT T OM www.irf.com IRFL4310PbF SOT-223 (TO-261AA) Tape & Reel Information 2 .0 5 (.08 0) 1 .9 5 (.07 7) TR 4 .1 0 (.1 6 1) 3 .9 0 (.1 5 4) 0 .3 5 (.0 13 ) 0 .2 5 (.0 10 ) 1 .8 5 (.07 2 ) 1 .6 5 (.06 5 ) 7 .55 (.2 97 ) 7 .45 (.2 94 ) 1 6.30 (.6 4 1) 1 5.70 (.6 1 9) 7 .60 (.2 99 ) 7 .40 (.2 92 ) 1 .60 (.06 2) 1 .50 (.05 9) TYP. F E E D D IR E C T IO N 2.3 0 (.0 9 0) 2.1 0 (.0 8 3) 7 .10 (.2 79 ) 6 .90 (.2 72 ) 1 2.1 0 (.47 5 ) 1 1.9 0 (.46 9 ) NO TE S : 1. C O N T R O LL IN G D IM E N S IO N : MIL L IM E T E R . 2. O U T LIN E C O N F O R M S T O E IA -4 81 & E IA -5 41 . 3. E A C H O 330 .0 0 (13 .0 0) R E E L C O N T A IN S 2, 50 0 D E V IC E S . 13 .2 0 (.5 1 9) 12 .8 0 (.5 0 4) 1 5.40 (.60 7) 1 1.90 (.46 9) 4 3 3 0.0 0 (13 .0 00 ) M AX. 5 0.00 (1 .9 6 9) M IN . N OTES : 1. O U T LIN E C O M F O R M S T O E IA -4 18 -1 . 2. C O N T R O LL IN G D IM E N S IO N : M ILL IM E T E R .. 3. D IM E N S IO N M E A S U R E D @ H U B . 4. IN C L U D E S F LA N G E D IS T O R T IO N @ O U T E R E D G E . 1 8 .4 0 (.72 4) M AX. 14 .4 0 (.56 6 ) 12 .4 0 (.48 8 ) 3 4 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04 www.irf.com 9 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 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