PD - 95258A
IRFL4315PbF
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
150V
RDS(on) max
ID
185mW@VGS = 10V 2.6A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
SOT-223
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
2.6
2.1
21
2.8
0.02
± 30
6.3
-55 to + 150
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJA
Parameter
Junction-to-Ambient (PCB Mount, steady state)
Typ.
Max.
Units
–––
45
°C/W
Notes through are on page 8
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1
09/22/10
IRFL4315PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
150
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.19
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
–––
V/°C Reference to 25°C, ID = 1mA
185
mΩ VGS = 10V, ID = 1.6A
5.0
V
VDS = VGS, ID = 250µA
25
VDS = 150V, VGS = 0V
µA
250
VDS = 120V, VGS = 0V, TJ = 125°C
100
VGS = 30V
nA
-100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
3.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
12
2.1
6.8
8.4
21
20
19
420
100
25
720
48
98
Max. Units
Conditions
–––
S
VDS = 50V, ID = 1.6A
19
ID = 1.6A
3.1
nC
VDS = 120V
10
VGS = 10V
–––
VDD = 75V
–––
ID = 1.6A
ns
–––
RG = 15Ω
–––
VGS = 10V
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 120V
Avalanche Characteristics
Parameter
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
Units
–––
–––
38
3.1
mJ
A
Diode Characteristics
IS
ISM
VSD
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
2.6
A
–––
–––
21
–––
–––
–––
–––
61
160
1.5
91
240
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 2.1A, VGS = 0V
TJ = 25°C, IF = 1.6A
di/dt = 100A/µs
D
S
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IRFL4315PbF
100
100
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
10
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
TOP
1
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
5.5V
0.1
10
5.5V
1
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1
0.1
1
10
100
0.1
1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
Fig 2. Typical Output Characteristics
100.00
2.5
I D = 2.6A
T J = 150°C
10.00
T J = 25°C
VDS = 50V
20µs PULSE WIDTH
1.00
5.0
6.0
7.0
8.0
9.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10.0
(Normalized)
2.0
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (Α)
10
VDS, Drain-to-Source Voltage (V)
1.5
1.0
0.5
V GS = 10V
0.0
-60
-40
-20
0
20
40
60
TJ, Junction Temperature
80
100
120
140
160
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFL4315PbF
10000
12
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
1000
Ciss
100
Coss
Crss
VDS= 120V
VDS= 75V
10
VDS= 30V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
10
1
10
100
0
1000
2
VDS, Drain-to-Source Voltage (V)
100
ID, Drain-to-Source Current (A)
TJ = 150 ° C
10
T J= 25 ° C
1
V GS = 0 V
0.1
0.0
0.5
1.0
1.5
2.0
V SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
6
8
10
12
14
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
4
4
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
I SD , Reverse Drain Current (A)
C, Capacitance(pF)
Coss = Cds + Cgd
ID= 1.6A
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
2.5
1
10msec
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFL4315PbF
3.0
VDS
2.5
VGS
ID , Drain Current (A)
D.U.T.
RG
2.0
RD
+
-V DD
10V
1.5
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
0.5
VDS
90%
0.0
25
50
75
100
125
150
°
TA , Ambient Temperature
(°C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJA )
100
D = 0.50
10
0.20
Thermal Response
0.10
0.05
P DM
1
0.02
t1
0.01
t2
Notes:
SINGLE PULSE
(THERMAL RESPONSE)
1. Duty factor D =
2. Peak T
0.1
0.00001
0.0001
0.001
0.01
0.1
t1 / t 2
J = P DM x Z thJA
1
+TA
10
100
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
RDS(on) , Drain-to -Source On Resistance (mΩ)
RDS (on) , Drain-to-Source On Resistance (mΩ)
IRFL4315PbF
240
220
200
VGS = 10V
180
160
140
120
100
0
5
10
15
20
4000
3500
3000
2500
2000
1500
1000
ID = 2.6A
500
0
4.5
25
6.0
7.5
9.0
10.5
12.0
13.5
15.0
VGS, Gate -to -Source Voltage (V)
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
50KΩ
12V
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
VG
100
TOP
ID
1.4A
BOTTOM
2.5A
3.1A
VGS
3mA
Charge
IG
ID
80
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
0.01Ω
A
EAS , Single Pulse Avalanche Energy (mJ)
Current Sampling Resistors
60
40
20
0
25
50
75
100
Starting Tj, Junction Temperature
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
125
150
( ° C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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IRFL4315PbF
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
HEXFET PRODUCT MARKING
T HIS IS AN IRFL014
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
LOT CODE
F L014
314P
T OP
AXXXX
A = AS S EMBLY S IT E
DAT E CODE
CODE
(YYWW)
YY = YEAR
WW = WEEK
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
BOT T OM
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
IRFL4315PbF
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
4.10 (.161)
3.90 (.154)
2.05 (.080)
1.95 (.077)
TR
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
2.30 (.090)
2.10 (.083)
7.10 (.279)
6.90 (.272)
12.10 (.475)
11.90 (.469)
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
15.40 (.607)
11.90 (.469)
13.20 (.519)
12.80 (.504)
4
330.00
(13.000)
MAX.
50.00 (1.969)
MIN.
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
14.40 (.566)
12.40 (.488)
18.40 (.724)
MAX.
4
3
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board.
Coss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 7.8mH
as Coss while VDS is rising from 0 to 80% VDSS.
RG = 25Ω, IAS = 3.1A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
ISD ≤ 1.6A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2010
8
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IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
