IRFP260MPbF
IR MOSFET™
Features
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Lead-Free
V(BR)DSS
200V
RDS(on) max.
0.04
ID
50A
Description
IR MOSFET™ technology from Infineon utilizes
advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
rugged device design that IR MOSFET™ devices are
well known for, provides the designer with an
extremely efficient and reliable device for use in a
wide variety of applications.
TO-247AD
G
Gate
The TO-247 package is preferred for commercialindustrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
Base part number
Package Type
IRFP260MPbF
TO-247AD
D
Drain
Standard Pack
Form
Quantity
Tube
25
S
Source
Orderable Part Number
IRFP260MPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
50
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
35
200
PD @TC = 25°C
Maximum Power Dissipation
300
W
2.0
± 20
560
50
30
10
W/°C
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max.
Units
A
V
mJ
A
mJ
V/ns
-55 to + 175
°C
300
10 lbf•in (1.1N•m)
Thermal Resistance
Symbol
RJC
RCS
RJA
1
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.50
–––
40
Units
°C/W
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IRFP260MPbF
Electrical characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
200
–––
–––
2.0
27
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V VGS = 0V, ID = 250µA
0.26 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.04
VGS = 10V, ID = 28A
–––
4.0
V VDS = VGS, ID = 250µA
––– –––
S VDS = 50V, ID = 28A
–––
25
VDS = 200V, VGS = 0V
µA
––– 250
VDS = 160V,VGS = 0V,TJ =150°C
––– 100
VGS = 20V
nA
––– -100
VGS = -20V
Dynamic Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
17
60
55
48
234
38
110
LD
Internal Drain Inductance
–––
5.0
–––
LS
Internal Source Inductance
–––
13
–––
–––
–––
–––
–––
–––
–––
ID = 28A
nC VDS = 160V
VGS = 10V, See Fig.6 and 13
VDD = 100V
ID = 28A
ns
RG= 1.8
VGS = 10V See Fig.10
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz, See Fig.5
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
–––
–––
–––
4057
603
161
Min.
Typ. Max. Units
–––
–––
50
–––
–––
200
VSD
Diode Forward Voltage
–––
–––
1.3
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
268
1.9
402
2.8
A
V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C,IS = 28A,VGS = 0V
ns TJ = 25°C ,IF = 28A
µC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).
Starting TJ = 25°C, L = 1.5mH, RG = 25, IAS = 28A.(See fig. 12).
ISD 28A, di/dt 486A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
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IRFP260MPbF
Fig. 1 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
3
Fig. 2 Typical Output Characteristics
Fig. 4 Normalized On-Resistance vs. Temperature
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IRFP260MPbF
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
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IRFP260MPbF
Fig 10a. Switching Time Test Circuit
Fig 9. Maximum Drain Current vs. Case
Temperature
Fig 10a. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction -to-Case
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IRFP260MPbF
Fig. 12a. Unclamped Inductive Test Circuit
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig. 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
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Fig 13b. Gate Charge Test Circuit
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IRFP260MPbF
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel
IR MOSFET™
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TO-247AD Package Outline (Dimensions are shown in millimeters (inches))
PG-TO247-3-21, -41, -44
DIMENSIONS
A
A1
A2
b
b1
b2
c
D
D1
D2
E
E1
E2
E3
e
L
L1
P
Q
S
MILLIMETERS
MIN.
MAX.
4.70
5.30
2.20
2.60
1.50
2.50
1.00
1.40
1.60
2.41
2.57
3.43
0.38
0.89
20.70
21.50
13.08
17.65
0.51
1.35
15.50
16.30
12.38
14.15
3.40
5.10
1.00
2.60
5.44
19.80
20.40
3.85
4.50
3.50
3.70
5.35
6.25
6.04
6.30
DOCUMENT NO.
Z8B00003327
REVISION
06
SCALE 3:1
0 1 2 3 4 5mm
EUROPEAN PROJECTION
ISSUE DATE
25.07.2018
TO-247AD Part Marking Information
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IRFP260MPbF
Revision History
Date
05/28/2020
Comments
Updated datasheet with corporate template
Updated Package picture-page1
Corrected from “Hexfet power MOSFET” to “ IR MOSFET™” -page1 &7
Corrected part marking from TO-247AC to TO-247AD on page 8.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
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(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
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In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
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the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
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completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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