IRFP3006PBF

IRFP3006PbF   VDSS 60V RDS(on) typ. max. 2.1m 2.5m ID (Silicon Limited) 270A ID (Package Limited) 195A     D G D S G S Applications  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply  High Speed Power Switching  Hard Switched and High Frequency Circuits TO-247AC G D S Gate Drain Source Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free Base Part Number   Package Type   IRFP3006PbF TO-247 Standard Pack Form Quantity Tube 25 Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V(Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) ID @ TC = 25°C Pulsed Drain Current  IDM Maximum Power Dissipation PD @TC = 25°C Linear Derating Factor Gate-to-Source Voltage VGS Peak Diode Recovery  dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy  IAR Avalanche Current  EAR Repetitive Avalanche Energy  Thermal Resistance Symbol Parameter Junction-to-Case  RJC Case-to-Sink, Flat Greased Surface RCS Junction-to-Ambient RJA   www.irf.com © 2013 International Rectifier     Max. 270 190 195 1080 375 2.5 ± 20 Units A       W W/°C V 10 V/ns -55 to + 175 TJ TSTG 1 Orderable Part Number   IRFP3006PbF °C 300 10lbfin (1.1Nm)       320 See Fig. 14, 15, 22a, 22b     Typ. ––– 0.24 ––– mJ A mJ   Max. 0.4 ––– 40 Units °C/W September 06, 2013 IRFP3006PbF   Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Drain-to-Source Breakdown Voltage V(BR)DSS V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage Drain-to-Source Leakage Current IDSS IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage RG Internal Gate Resistance Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter gfs Forward Transconductance Qg Total Gate Charge Qgs Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Qgd Total Gate Charge Sync. (Qg - Qgd) Qsync Turn-On Delay Time td(on) tr Rise Time Turn-Off Delay Time td(off) tf Fall Time Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Coss eff. (ER) Effective Output Capacitance (Energy Related) Coss eff. (TR) Effective Output Capacitance (Time Related) Diode Characteristics Symbol Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode)  VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current     Min. Typ. Max. 60 ––– ––– ––– 0.07 ––– ––– 2.1 2.5 2.0 ––– 4.0 ––– ––– 20 ––– ––– 250 ––– ––– 100 ––– ––– -100 ––– 2.0 –––     Min. Typ. Max. 280 ––– ––– ––– 200 300 ––– 37 ––– ––– 60 ––– ––– 140 ––– ––– 16 ––– ––– 182 ––– ––– 118 ––– ––– 189 ––– ––– 8970 ––– ––– 1020 ––– ––– 534 ––– ––– 1480 ––– –––     Units Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 5mA m VGS = 10V, ID = 170A  V VDS = VGS, ID = 250µA µA VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V      Units Conditions S VDS = 25V, ID = 170A ID = 170A VDS =30V nC VGS = 10V  ID = 170A, VDS =0V, VGS = 10V VDD = 39V ID = 170A ns RG = 2.7 VGS = 10V  VGS = 0V VDS = 50V ƒ = 1.0 MHz, See Fig. 5 pF VGS = 0V, VDS = 0V to 48V  See Fig. 11 ––– VGS = 0V, VDS = 0V to 48V  1920         Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 257 showing the A G integral reverse ––– ––– 1028 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 170A, VGS = 0V  ––– 44 ––– ns TJ = 25°C ––– 48 ––– TJ = 125°C VR = 51V, ––– 63 ––– nC TJ = 25°C IF = 170A ––– 77 ––– TJ = 125°C di/dt = 100A/µs  ––– 2.4 ––– A TJ = 25°C Notes:  Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A.Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)  Repetitive rating; pulse width limited by max. Junction temperature.  Limited by TJmax, starting TJ = 25°C, L = 0.022mH, RG = 50, IAS = 170A,VGS =10V. Part not Recommended for use above this value.  ISD ≤ 170A, di/dt ≤ 1360A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.  Pulse width ≤ 400µs; duty cycle ≤ 2%.  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.  R is measured at TJ approximately 90°C. * All spec data and curves based on (TO-220 Pak -IRFB3006PbF) Datasheet. 2 www.irf.com © 2013 International Rectifier September 06, 2013 IRFP3006PbF   1000 1000 100 BOTTOM VGS 15V 10V 8.0V 6.0V 5.0V 4.5V 4.0V 3.5V 10 3.5V  60µs PULSE WIDTH Tj = 25°C 1 BOTTOM 100 3.5V  60µs PULSE WIDTH Tj = 175°C 10 0.1 1 10 100 0.1 VDS , Drain-to-Source Voltage (V) 10 100 Fig 2. Typical Output Characteristics 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 ID, Drain-to-Source Current) 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics TJ = 175°C 100 TJ = 25°C 10 VDS = 25V  60µs PULSE WIDTH 1 ID = 170A VGS = 10V 2.0 1.5 1.0 0.5 2.0 3.0 4.0 5.0 6.0 7.0 -60 -40 -20 VGS, Gate-to-Source Voltage (V) 16000 Fig 4. Normalized On-Resistance vs. Temperature VGS, Gate-to-Source Voltage (V) Coss = Cds + Cgd C iss 8000 4000 20 40 60 80 100 120 140 160 180 16 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 12000 0 TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics C, Capacitance (pF) VGS 15V 10V 8.0V 6.0V 5.0V 4.5V 4.0V 3.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP C oss ID= 170A 12 VDS = 48V VDS = 30V 8 4 Crss 0 0 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 www.irf.com © 2013 International Rectifier 0 40 80 120 160 200 240 280 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage September 06, 2013 IRFP3006PbF   10000 TJ = 175°C ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 1000 100 10 TJ = 25°C 1 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 100µsec 100 LIMITED BY PACKAGE 10 10msec 1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.0 0.4 0.8 1.2 1.6 2.0 0.1 VSD , Source-to-Drain Voltage (V) LIMITED BY PACKAGE ID , Drain Current (A) 250 200 150 100 50 0 50 75 100 125 150 10 100 Fig 8. Maximum Safe Operating Area V(BR)DSS , Drain-to-Source Breakdown Voltage 300 25 1 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-to-Drain Diode Forward Voltage 80 ID = 5mA 75 70 65 60 55 175 -60 -40 -20 TC , Case Temperature (°C) 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 10. Drain-to-Source Breakdown Voltage Fig 9. Maximum Drain Current vs. Case Temperature 1400 EAS, Single Pulse Avalanche Energy (mJ) 2.0 1.5 Energy (µJ) DC 0.1 0.1 1.0 0.5 ID 20A 27A BOTTOM 170A 1200 TOP 1000 800 600 400 200 0 0.0 0 10 20 30 40 50 60 VDS, Drain-to-Source Voltage (V) Fig 11. Typical Coss Stored Energy 4 1msec www.irf.com © 2013 International Rectifier 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) Fig 12. Maximum Avalanche Energy vs. Drain Current September 06, 2013 IRFP3006PbF   Thermal Response ( Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) 0.01 0.05 0.10 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming  j = 25°C and Tstart = 150°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs. Pulsewidth EAR , Avalanche Energy (mJ) 400 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 170A 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 15. Maximum Avalanche Energy vs. Temperature 5 www.irf.com © 2013 International Rectifier Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav September 06, 2013 IRFP3006PbF   20 ID = 1.0A ID = 1.0mA ID = 250µA 3.5 16 3.0 12 IRRM - (A) VGS(th) Gate threshold Voltage (V) 4.0 2.5 8 2.0 IF = 112A VR = 51V 4 1.5 TJ = 125°C TJ = 25°C 0 1.0 -75 -50 -25 0 25 50 75 100 100 125 150 175 200 300 400 500 600 700 800 dif / dt - (A / µs) TJ , Temperature ( °C ) Fig. 17 Typical Recovery Current vs. dif/dt Fig. 16 Threshold Voltage vs. Temperature 700 20 600 16 QRR - (nC) IRRM - (A) 500 12 8 4 0 100 200 300 400 400 300 IF = 170A VR = 51V 200 IF = 112A VR = 51V TJ = 125°C TJ = 25°C 100 TJ = 125°C TJ = 25°C 500 600 0 700 100 800 200 300 400 500 600 700 800 dif / dt - (A / µs) dif / dt - (A / µs) Fig 19. Typical Stored Charge vs. dif/dt Fig 18. Typical Recovery Current vs. dif/dt 700 600 QRR - (nC) 500 400 300 200 IF = 170A VR = 51V 100 TJ = 125°C TJ = 25°C 0 100 200 300 400 500 600 700 800 dif / dt - (A / µs) Fig 20. Typical Stored Charge vs. dif/dt 6 www.irf.com © 2013 International Rectifier September 06, 2013 IRFP3006PbF   Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Fig 22a. Unclamped Inductive Test Circuit 7 Fig 22b. Unclamped Inductive Waveforms Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform www.irf.com © 2013 International Rectifier September 06, 2013 IRFP3006PbF   TO-247AC Package Outline (Dimensions are shown in millimeters (inches)) TO-247AC Part Marking Information TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2013 International Rectifier September 06, 2013 IRFP3006PbF   Qualification information† Industrial Qualification level (per JEDEC JESD47F )†† Moisture Sensitivity Level   N/A TO-247AC   RoHS compliant † †† Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: 101N Sepulveda Blvd, El Segundo, California 90245, USA To contact Interna onal Rec fier, please visit h p://www.irf.com/whoto‐call/ 9 www.irf.com © 2013 International Rectifier September 06, 2013 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 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