StrongIRFET™
IRFP7537PbF
HEXFET® Power MOSFET
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
3.30m
172A
S
TO-247
IRFP7537PbF
D
Drain
Standard Pack
Form
Quantity
Tube
25
12
S
Source
Orderable Part Number
IRFP7537PbF
200
ID = 100A
10
8
6
TJ = 125°C
4
TJ = 25°C
2
0
2
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1
max
GD
ID, Drain Current (A)
RDS(on), Drain-to -Source On Resistance (m)
TO-247
2.75m
ID
G
Gate
IRFP7537PbF
RDS(on) typ.
S
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
Package Type
60V
G
Base part number
VDSS
D
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150
100
50
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
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IRFP7537PbF
Absolute Maximum Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Parameter
Max.
Continuous Drain Current, VGS @ 10V
172
Continuous Drain Current, VGS @ 10V
121
Pulsed Drain Current
700
Maximum Power Dissipation
230
Linear Derating Factor
1.5
VGS
Gate-to-Source Voltage
± 20
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
250
EAS (Thermally limited)
Single Pulse Avalanche Energy
554
EAS (Thermally limited)
Single Pulse Avalanche Energy
IAR
Avalanche Current
See Fig 15, 16, 23a, 23b
Repetitive Avalanche Energy
EAR
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Junction-to-Case
RJC
–––
0.66
Case-to-Sink, Flat Greased Surface
RCS
0.24
–––
Junction-to-Ambient
RJA
–––
40
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
RG
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
60
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ. Max.
––– –––
40
–––
2.75 3.30
3.50 –––
–––
3.7
–––
1.0
––– 150
––– 100
––– -100
2.0
–––
Units
A
W
W/°C
V
°C
mJ
A
mJ
Units
°C/W
Units
Conditions
V
VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 100A
m
VGS = 6.0V, ID = 50A
V
VDS = VGS, ID = 150µA
VDS =60 V, VGS = 0V
µA
VDS =60V,VGS = 0V,TJ =125°C
VGS = 20V
nA
VGS = -20V
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 50µH, RG = 50, IAS = 100A, VGS =10V.
ISD 100A, di/dt 1130A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
R is measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 33A, VGS =10V.
2
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IRFP7537PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Min.
190
–––
–––
–––
–––
–––
–––
Typ.
–––
142
36
43
99
15
105
td(off)
Turn-Off Delay Time
–––
82
tf
Ciss
Coss
Crss
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
–––
–––
–––
–––
84
7020
640
395
–––
665
–––
VGS = 0V, VDS = 0V to 48V
–––
880
–––
VGS = 0V, VDS = 0V to 48V
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max. Units
–––
–––
172
–––
–––
700
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
dv/dt
Peak Diode Recovery dv/dt
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
–––
–––
–––
–––
–––
–––
10
39
41
46
56
2.1
–––
–––
–––
–––
–––
–––
Coss eff.(ER)
Coss eff.(TR)
Max. Units
Conditions
–––
S VDS = 10V, ID =100A
210
ID = 100A
–––
VDS = 30V
nC
–––
VGS = 10V
–––
–––
VDD = 30V
–––
ID = 100A
ns
–––
RG= 2.7
VGS = 10V
–––
–––
–––
–––
pF
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig.7
Diode Characteristics
Symbol
IS
ISM
3
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A
V
D
G
S
TJ = 25°C,IS = 100A,VGS = 0V
V/ns TJ = 175°C,IS =100A,VDS = 60V
TJ = 25°C
VDD = 51V
ns
TJ = 125°C
IF = 100A,
TJ = 25°C di/dt = 100A/µs
nC
TJ = 125°C
A TJ = 25°C
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IRFP7537PbF
1000
1000
100
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
10
BOTTOM
4.5V
100
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
10
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
2.4
1000
100
TJ = 175°C
TJ = 25°C
10
1
VDS = 25V
60µs PULSE WIDTH
ID = 100A
VGS = 10V
2.0
1.6
1.2
0.8
0.4
0.1
2
3
4
5
6
-60
7
VGS, Gate-to-Source Voltage (V)
Coss = Cds + Cgd
Ciss
Coss
Crss
1000
60
100
140
180
14.0
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
10000
20
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
100000
-20
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
10
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
ID = 100A
12.0
VDS = 48V
VDS = 30V
10.0
VDS= 12V
8.0
6.0
4.0
2.0
0.0
100
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
4
1
VDS, Drain-to-Source Voltage (V)
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0
50
100
150
QG, Total Gate Charge (nC)
Fig 8. Typical Gate Charge vs.
Gate-to-Source Voltage
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IRFP7537PbF
1000
TJ = 175°C
100
TJ = 25°C
10
100µsec
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
1
VGS = 0V
100
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
DC
0.1
0.1
0.1
0.4
0.7
1.0
1.3
1.6
1.9
0.1
2.2
1
10
VDS , Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
1.2
78
Id = 1.0mA
76
1.0
74
0.8
Energy (µJ)
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
1msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
72
70
0.6
0.4
68
0.2
66
0.0
64
-60
-20
20
60
100
140
0
180
TJ , Temperature ( °C )
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
RDS (on), Drain-to -Source On Resistance (m)
Fig 11. Drain-to-Source Breakdown Voltage
Fig 12. Typical Coss Stored Energy
5.1
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
4.6
4.1
3.6
3.1
2.6
0
50
100
150
200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5
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IRFP7537PbF
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width
EAR , Avalanche Energy (mJ)
300
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 100A
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
6
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Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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IRFP7537PbF
12
IF = 60A
VR = 51V
4.0
TJ = 25°C
TJ = 125°C
9
3.5
IRRM (A)
VGS(th), Gate threshold Voltage (V)
4.5
3.0
2.5
2.0
6
ID = 150µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
1.5
3
1.0
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
200
TJ , Temperature ( °C )
600
800
1000
diF /dt (A/µs)
Fig 18. Typical Recovery Current vs. dif/dt
Fig 17. Threshold Voltage vs. Temperature
15
225
12
IF = 100A
VR = 51V
200
TJ = 25°C
TJ = 125°C
175
9
QRR (nC)
IRRM (A)
400
6
IF = 60A
VR = 51V
TJ = 25°C
TJ = 125°C
150
125
100
75
3
50
0
25
0
200
400
600
800
1000
0
200
diF /dt (A/µs)
400
600
800
1000
diF /dt (A/µs)
Fig 19. Typical Recovery Current vs. dif/dt
Fig 20. Typical Stored Charge vs. dif/dt
225
IF = 100A
VR = 51V
200
TJ = 25°C
TJ = 125°C
QRR (nC)
175
150
125
100
75
50
25
0
200
400
600
800
1000
diF /dt (A/µs)
Fig 21. Typical Stored Charge vs. dif/dt
7
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IRFP7537PbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T
RG
IAS
20V
tp
+
V
- DD
A
I AS
0.01
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1 Qgs2
Fig 25a. Gate Charge Test Circuit
8
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Qgd
Qgodr
Fig 25b. Gate Charge Waveform
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IRFP7537PbF
TO-247AC Package Outline (Dimensions are shown in millimeters (inches))
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
Note: "P" in assembly line position
indicates "Lead-Free"
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
IRFPE30
56
135H
57
ASSEMBLY
LOT CODE
DATE CODE
YEAR 1 = 2001
WEEK 35
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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IRFP7537PbF
Qualification Information†
Industrial
(per JEDEC JESD47F) ††
Qualification Level
Moisture Sensitivity Level
TO-247
N/A
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
11/18/2014
Comments
Updated EAS (L =1mH) = 554mJ on page 2
Updated note 8 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 33A, VGS =10V”. on page 2
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
10
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IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
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