IRFR2405TRL

PD - 93861 IRFR2405 IRFU2405 Surface Mount (IRFR2405) l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description HEXFET® Power MOSFET l D VDSS = 55V RDS(on) = 0.016Ω G Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ID = 56A† S D-Pak IRFR2405 I-Pak IRFU2405 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. Units 56† 40† 220 110 0.71 ± 20 130 34 11 5.0 -55 to + 175 A W W/°C V mJ A mJ V/ns °C 300 (1.6mm from case ) Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Typ. Max. Units ––– ––– ––– 1.4 50 110 °C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com 1 3/1/00 IRFR/U2405 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 55 ––– ––– 2.0 30 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance ––– LS Internal Source Inductance ––– Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance … ––– ––– ––– ––– ––– ––– V(BR)DSS ∆V(BR)DSS/∆TJ IGSS Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 0.052 ––– V/°C Reference to 25°C, ID = 1mA 0.0118 0.016 Ω VGS = 10V, ID = 34A „ ––– 4.0 V VDS = 10V, ID = 250µA ––– ––– S VDS = 25V, ID = 34A ––– 20 VDS = 55V, VGS = 0V µA ––– 250 VDS = 44V, VGS = 0V, T J = 150°C ––– 200 VGS = 20V nA ––– -200 VGS = -20V 70 110 ID = 34A 16 23 nC VDS = 44V 19 29 VGS = 10V„ 15 ––– VDD = 28V 130 ––– ID = 34A ns 55 ––– RG = 6.8Ω 78 ––– VGS = 10V „ D Between lead, 4.5 ––– 6mm (0.25in.) nH G from package 7.5 ––– and center of die contact S 2430 ––– VGS = 0V 470 ––– pF VDS = 25V 100 ––– ƒ = 1.0MHz, See Fig. 5 2040 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz 350 ––– VGS = 0V, VDS = 44V, ƒ = 1.0MHz 350 ––– VGS = 0V, VDS = 0V to 44V Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 0.22mH RG = 25Ω, IAS = 34A. ƒ ISD ≤ 34A, di/dt ≤ 190A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 2 Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 56† showing the A G integral reverse ––– ––– 220 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 34A, VGS = 0V „ ––– 62 93 ns TJ = 25°C, IF = 34A ––– 170 260 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS † Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A www.irf.com IRFR/U2405 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 100 4.5V 4.5V 20µs PULSE WIDTH TJ = 25 °C 10 0.1 1 10 100 Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 TJ = 25 ° C TJ = 175 ° C 100 V DS = 25V 20µs PULSE WIDTH 6.0 7.0 8.0 9.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 1000 5.0 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 10 4.0 20µs PULSE WIDTH TJ = 175 °C 10 0.1 10.0 ID = 56A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFR/U2405 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 3200 Ciss 2400 1600 800 Coss 20 VGS , Gate-to-Source Voltage (V) 4000 ID = 34A VDS = 44V VDS = 27V VDS = 11V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 Crss 0 1 10 0 100 0 VDS , Drain-to-Source Voltage (V) 20 40 60 80 100 Q G , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 100 I D , Drain Current (A) ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 25 ° C 10 1 0.4 V GS = 0 V 0.8 1.2 1.6 2.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10us 100 TJ = 175 ° C 2.4 100us 10 1ms TC = 25 ° C TJ = 175 ° C Single Pulse 1 1 10ms 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFR/U2405 60 VDS RD LIMITED BY PACKAGE VGS 50 D.U.T. RG + I D , Drain Current (A) -VDD 40 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 10 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 P DM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR/U2405 240 D R IV E R L VDS D .U .T RG + V - DD IA S 20V tp A 0 .0 1 Ω Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS EAS , Single Pulse Avalanche Energy (mJ) 1 5V TOP 200 BOTTOM 160 120 80 40 0 25 tp ID 14A 24A 34A 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ QGS QGD 12V .2µF .3µF D.U.T. VG + V - DS VGS 3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform 6 Fig 13b. Gate Charge Test Circuit www.irf.com IRFR/U2405 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ƒ + ‚ - - „ +  • • • • RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. D= Period + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRFR/U2405 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5 0 ) -A 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 4 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) 1.0 2 (.0 4 0 ) 1.6 4 (.0 2 5 ) 1 0 .4 2 (.4 1 0 ) 9 .4 0 (.3 7 0 ) 1 2 1 - GATE 0 .5 1 (.0 2 0 ) M IN . -B 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 3X 2X 1 .1 4 (.0 4 5 ) 0 .7 6 (.0 3 0 ) L E A D A S S IG N M E N T S 3 0 .8 9 (.0 3 5 ) 0 .6 4 (.0 2 5 ) 0 .2 5 ( .0 1 0 ) 2 - D R A IN 3 - S OU R CE 4 - D R A IN 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) M A M B N O TE S : 2 .2 8 ( .0 9 0 ) 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 4 .5 7 ( .1 8 0 ) 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0 .1 6 (.0 0 6 ) . D-Pak (TO-252AA) Part Marking Information 8 www.irf.com IRFR/U2405 I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.26 5 ) 6 .3 5 (.25 0 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) -A 1 .2 7 ( .0 5 0 ) 0 .8 8 ( .0 3 5 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 4 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 ( .2 4 5 ) 5 .9 7 ( .2 3 5 ) 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 1 2 L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - SOURCE 4 - D R A IN 3 -B - N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5M , 19 8 2 . 2.2 8 (.0 9 0) 1.9 1 (.0 7 5) 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R MS TO J E D E C O U T L IN E TO -2 5 2 A A . 9 .6 5 ( .3 8 0 ) 8 .8 9 ( .3 5 0 ) 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0.1 6 (.0 0 6 ). 3X 1 .1 4 (.0 45 ) 0 .7 6 (.0 30 ) 2 .28 (.0 9 0 ) 2X 3X 1 .1 4 ( .0 4 5 ) 0 .8 9 ( .0 3 5 ) 0 .8 9 (.0 35 ) 0 .6 4 (.0 25 ) 0 .2 5 (.0 1 0 ) M A M B 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) I-Pak (TO-251AA) Part Marking Information www.irf.com 9 IRFR/U2405 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) F E E D D IR E C T IO N TR L 16 .3 ( .64 1 ) 15 .7 ( .61 9 ) 8.1 ( .3 18 ) 7.9 ( .3 12 ) F E E D D IR E C T IO N N OTES : 1 . C O N T R O LL IN G D IM E N S IO N : M ILL IM E T E R . 2 . A LL D IM E N S IO N S A R E S H O W N IN M ILLIM E T E R S ( IN C H E S ). 3 . O U T LIN E C O N F O R M S T O E IA -4 81 & E IA -54 1. 13 IN C H 16 m m NO TES : 1. O U T LIN E C O N F O R M S T O E IA -481. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 3/00 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/