IRFR3418TRLPBF

PD - 95516A IRFR3418PbF IRFU3418PbF HEXFET® Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS RDS(on) Max 14m: 80V Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current ID 30A l D-Pak IRFR3418 I-Pak IRFU3418 Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage Parameter 80 V VGS Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ± 20 70 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current 280 PD @TC = 25°C Maximum Power Dissipation 140 PD @TA = 25°C Maximum Power Dissipation 3.8 Linear Derating Factor 0.95 W/°C 5.2 -55 to + 175 V/ns °C ID @ TC = 25°C ID @ TC = 100°C h e dv/dt TJ Peak Diode Recovery dv/dt Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds A 50 c W 300 (1.6mm from case ) Thermal Resistance Typ. Max. RθJC Junction-to-Case Parameter ––– 1.05 RθJA Junction-to-Ambient (PCB Mount) * ––– 40 RθJA Junction-to-Ambient ––– 110 Units °C/W Notes  through † are on page 10 www.irf.com 1 12/03/04 IRFR/U3418PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 80 ––– ––– ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.08 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 11.5 14 Gate Threshold Voltage 3.5 ––– 5.5 mΩ V VGS = 10V, ID = 18A VGS(th) IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 80V, VGS = 0V ––– ––– 250 Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 IGSS V VGS = 0V, ID = 250µA f VDS = VGS, ID = 250µA VDS = 64V, VGS = 0V, TJ = 150°C VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units 66 ––– ––– S Conditions gfs Qg Forward Transconductance VDS = 25V, ID = 18A Total Gate Charge ––– 63 94 Qgs Gate-to-Source Charge ––– 23 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 23 ––– VGS = 10V td(on) Turn-On Delay Time ––– 24 ––– VDD = 40V tr Rise Time ––– 72 ––– ID = 18A td(off) Turn-Off Delay Time ––– 41 ––– tf Fall Time ––– 27 ––– VGS = 10V Ciss Input Capacitance ––– 3510 ––– VGS = 0V Coss Output Capacitance ––– 330 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 190 ––– Coss Output Capacitance ––– 1220 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 240 ––– VGS = 0V, VDS = 64V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 360 ––– VGS = 0V, VDS = 0V to 64V ID = 18A nC ns pF VDS = 40V RG = 6.8Ω f f ƒ = 1.0MHz e Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c dh Typ. Max. Units ––– 260 mJ ––– 18 A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 70 ISM (Body Diode) Pulsed Source Current ––– ––– 280 VSD (Body Diode) Diode Forward Voltage ––– ––– 1.3 trr Reverse Recovery Time ––– 57 ––– ns Qrr Reverse Recovery Charge ––– 130 ––– nC ton Forward Turn-On Time 2 ch A Conditions MOSFET symbol D showing the integral reverse V G p-n junction diode. TJ = 25°C, IS = 18A, VGS = 0V S f TJ = 150°C, IF = 18A, VDD = 25V di/dt = 100A/µs f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFR/U3418PbF 1000 1000 100 10 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 9.0V 8.0V 7.5V 7.0V 6.5V 6.0V 1 0.1 6.0V 0.01 100 BOTTOM 10 6.0V 1 20µs PULSE WIDTH Tj = 175°C 20µs PULSE WIDTH Tj = 25°C 0.1 0.001 0.1 1 10 100 0.1 1000 1 10 100 1000 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 2.5 ID = 70A RDS(on), Drain-to-Source On Resistance (Normalized) 1000.00 ID, Drain-to-Source Current (Α) VGS 15V 10V 9.0V 8.0V 7.5V 7.0V 6.5V 6.0V 2.0 100.00 T J = 175°C 1.5 10.00 1.0 1.00 T J = 25°C 0.5 0.10 VDS = 25V 20µs PULSE WIDTH 0.01 5 6 7 8 9 10 11 12 13 14 15 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TTJ, Junction Temperature (°C) ( °C) VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFR/U3418PbF 100000 VGS , Gate-to-Source Voltage (V) ID= 18A Coss = Cds + Cgd 10000 C, Capacitance(pF) 12.0 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Ciss 1000 Coss Crss 100 VDS= 64V VDS= 40V 10.0 VDS= 16V 8.0 6.0 4.0 2.0 10 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) 30 40 50 60 70 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000.00 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 20 Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100.00 T J = 175°C 10.00 T J = 25°C 1.00 100 100µsec 10 1msec 1 TC = 25°C Tj = 175°C Single Pulse VGS = 0V 0.10 10msec 0.1 0.0 0.5 1.0 1.5 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10 2.0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFR/U3418PbF 80 LIMITED BY PACKAGE ID , Drain Current (A) RD V DS VGS 60 RG 40 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + -VDD VGS Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 PDM 0.10 0.1 0.05 0.02 0.01 0.01 0.00001 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR/U3418PbF 600 L VDS D.U.T RG IAS VGS 20V tp DRIVER + V - DD A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS EAS, Single Pulse Avalance Energy (mJ) 15V TOP 500 BOTTOM ID 7.3A 13A 18A 400 300 200 100 tp 0 25 50 75 100 125 150 175 StartingTTJ,, Junction Junction Temperature (°C)°C) Starting Temperature( Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF VGS QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform 6 ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFR/U3418PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D.U.T ƒ + ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRFR/U3418PbF D-Pak (TO-252AA) Package Outline D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH AS SEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 1999 IN T HE AS SEMBLY LINE "A" PART NUMBER INT ERNATIONAL RECT IFIER LOGO Note: "P" in as sembly line position indicates "Lead-Free" IRFU120 12 916A 34 ASSEMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INT ERNATIONAL RECT IFIER LOGO IRFU120 12 ASSEMBLY LOT CODE 8 34 DAT E CODE P = DESIGNATES LEAD-F REE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = ASSEMBLY SITE CODE www.irf.com IRFR/U3418PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRFU120 WIT H AS SEMBLY LOT CODE 5678 AS SEMB LED ON WW 19, 1999 IN T HE AS SEMB LY LINE "A" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFU120 919A 56 78 ASS EMBLY LOT CODE Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMB ER IRF U120 56 ASS EMB LY LOT CODE www.irf.com 78 DAT E CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = AS SEMBLY S IT E CODE 9 IRFR/U3418PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 1.6mH RG = 25Ω, IAS = 18A. ƒ ISD ≤ 18A, di/dt ≤ 350A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS † Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/