IRFR3704TRPBF

PD - 95034A IRFR3704PbF IRFU3704PbF SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use HEXFET® Power MOSFET VDSS RDS(on) max ID 20V 9.5mΩ 75A High Frequency Buck Converters for Computer Processor Power l 100% RG Tested l Lead-Free Benefits l Ultra-Low RDS(on) l l Very Low Gate Impedance l Fully Characterized Avalanche Voltage and Current D-Pak IRFR3704 I-Pak IRFU3704 Absolute Maximum Ratings Symbol Max Parameter VDS Drain-Source Voltage VGS ID @ TC = 25°C Gate-Source Voltage Continuous Drain Current, VGS @ 10V ± 20 75 ID @ TC = 70°C 63 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current Units 20 c Maximum Power Dissipation Maximum Power Dissipation TJ, TSTG Linear Derating Factor Junction and Storage Temperature Range f f A 300 e e PD @TC = 25°C PD @TA = 70°C V 90 W 62 0.58 -55 to +175 W/°C °C Thermal Resistance Symbol Parameter g RθJC Junction-to-Case RθJA Junction-to-Ambient (PCB Mount) * RθJA Junction-to-Ambient g g Typ Max ––– 1.7 ––– 50 ––– 110 Units °C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Notes  through … are on page 9 www.irf.com 1 12/13/04 IRFR/U3704PbF Static @ TJ = 25°C (unless otherwise specified) Min Typ Max Units V (BR)DSS ∆V(BR)DSS/∆TJ Symbol Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient 20 ––– ––– 0.021 ––– ––– V V GS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 7.3 11 9.5 14 mΩ V GS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current 1.0 ––– ––– ––– 3.0 10 Gate-to-Source Forward Leakage ––– ––– ––– ––– 100 200 Gate-to-Source Reverse Leakage ––– ––– -200 IGSS Parameter V µA nA Conditions e e V GS = 10V, ID = 15A V GS = 4.5V, ID = 12A V DS = VGS, ID = 250µA V DS = 20V, VGS = 0V V DS = 16V, VGS = 0V, TJ = 125°C V GS = 16V V GS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min Typ Max Units gfs Qg Symbol Forward Transconductance Total Gate Charge 42 ––– ––– 19 ––– ––– S V DS = 25V, ID = 57A ID = 28.4A Qgs Qgd Gate-to-Source Charge Gate-to-Drain ("Miller") Charge ––– ––– 8.1 6.4 ––– ––– nC QOSS RG Output Gate Charge Gate Resistance ––– 0.3 16 ––– 24 3.2 V DS = 10V V GS = 4.5V V GS = 0V, VDS = 10V td(on) tr Turn-On Delay Time Rise Time ––– ––– 8.4 98 ––– ––– td(off) Turn-Off Delay Time Fall Time ––– ––– 12 5.0 ––– ––– Input Capacitance Output Capacitance ––– ––– 1996 1085 ––– ––– Reverse Transfer Capacitance ––– 155 ––– tf Ciss Coss Crss Conditions e Ω V DD = 10V ID = 28.4A ns pF RG = 1.8Ω V GS = 4.5V e V GS = 0V V DS = 10V ƒ = 1.0MHz Avalanche Characteristics Symbol E AS IAR Parameter Single Pulse Avalanche Energy Avalanche Current c d Typ Max Units ––– ––– 216 71 mJ A Diode Characteristics Symbol Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current trr Qrr trr Qrr 2 ––– Typ ––– Max Units 75 f Conditions MOSFET symbol A showing the integral reverse ––– ––– 300 Diode Forward Voltage ––– ––– 0.88 0.82 1.3 ––– V Reverse Recovery Time Reverse Recovery Charge ––– ––– 38 45 57 68 ns nC TJ = 25°C, IF = 35.5A, V R = 20V di/dt = 100A/µs Reverse Recovery Time ––– 41 62 ns Reverse Recovery Charge ––– 50 75 nC TJ = 125°C, IF = 35.5A, VR= 20V di/dt = 100A/µs (Body Diode) V SD c Min p-n junction diode. TJ = 25°C, IS = 35.5A, VGS = 0V TJ = 125°C, IS = 35.5A, VGS = 0V e e e e www.irf.com IRFR/U3704PbF 1000 VGS TOP 10.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V 100 3.5V 10 VGS 10.0V 9.00V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 1000 100 3.5V 10 20µs PULSE WIDTH Tj = 175°C 20µs PULSE WIDTH Tj = 25°C 1 1 0.1 1 10 100 0.1 1 VDS, Drain-to-Source Voltage (V) 10 1000 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) Fig 2. Typical Output Characteristics I D , Drain-to-Source Current (A) Fig 1. Typical Output Characteristics TJ = 25 ° C TJ = 175 ° C 100 10 3.0 V DS = 15V 20µs PULSE WIDTH 4.0 5.0 6.0 7.0 8.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 100 VDS, Drain-to-Source Voltage (V) ID = 75A 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFR/U3704PbF VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 2000 1500 Coss 1000 500 ID = 28.4A VDS = 10V 8 6 4 2 Crss 0 1 10 0 100 0 10 VDS , Drain-to-Source Voltage (V) 30 40 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) 10us I D , Drain Current (A) 100 TJ = 175 ° C 100 10 TJ = 25 ° C 100us 1ms 10 10ms 1 0.1 0.2 V GS = 0 V 0.5 0.8 1.1 1.4 1.7 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ISD , Reverse Drain Current (A) C, Capacitance (pF) 2500 10 VGS , Gate-to-Source Voltage (V) 3000 2.0 TC = 25 ° C TJ = 175° C Single Pulse 1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFR/U3704PbF LIMITED BY PACKAGE ID , Drain Current (A) RD VDS 80 VGS D.U.T. RG 60 + -VDD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 175 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 PDM 0.05 0.1 0.02 0.01 0.01 0.00001 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.020 RDS(on) , Drain-to -Source On Resistance ( Ω) RDS ( on ) , Drain-to-Source On Resistance ( Ω ) IRFR/U3704PbF VGS = 4.5V 0.015 0.010 VGS = 10V 0.005 0 50 100 150 200 250 0.010 0.009 0.008 ID = 35.5A 0.007 0.006 300 4.0 ID , Drain Current ( A ) 5.0 6.0 7.0 8.0 9.0 10.0 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS .2µF QGS .3µF D.U.T. + V - DS QGD 600 EAS , Single Pulse Avalanche Energy (mJ) 50KΩ 12V VG VGS 3mA Charge IG ID Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveforms 15V V(BR)DSS tp L VDS D.U.T RG IAS 20V tp I AS DRIVER + - VDD 0.01Ω Fig 15a&b. Unclamped Inductive Test Circuit and Waveforms 6 A ID 11.6A 23.8A BOTTOM 28.4A TOP 500 400 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 15c. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRFR/U3704PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 1999 IN T HE ASSEMBLY LINE "A" PART NUMBER INTERNATIONAL RECT IFIER LOGO Note: "P" in as sembly line position indicates "Lead-Free" IRFU120 12 916A 34 ASSEMBLY LOT CODE DATE CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INTERNATIONAL RECTIFIER LOGO IRFU120 12 ASSEMBLY LOT CODE www.irf.com 34 DATE CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = ASS EMBLY SITE CODE 7 IRFR/U3704PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRF U120 WITH ASS EMBLY LOT CODE 5678 AS SEMB LED ON WW 19, 1999 IN THE AS SEMBLY LINE "A" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFU120 919A 56 78 ASS EMBLY LOT CODE Note: "P" in assembly line position indicates "Lead-Free" DATE CODE YEAR 9 = 1999 WEEK 19 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRF U120 56 AS SEMBLY LOT CODE 8 78 DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = ASS EMB LY SIT E CODE www.irf.com IRFR/U3704PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 0.5 mH RG = 25Ω, IAS = 28.4 A. ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%. „ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A … Rθ is measured at TJ approximately 90°C Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/04 www.irf.com 9 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/