IRFR3707

PD - 93934B IRFR3707 IRFU3707 SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l HEXFET® Power MOSFET VDSS RDS(on) max ID 30V 13mΩ 61A„ High Frequency Buck Converters for Computer Processor Power Benefits l Ultra-Low RDS(on) l Very Low Gate Impedance l Fully Characterized Avalanche Voltage and Current D-Pak IRFR3707 I-Pak IRFU3707 Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Max. Units 30 ± 20 61 „ 51 „ 244 87 61 0.59 -55 to + 175 V V A W W mW/°C °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Typ. Max. Units ––– ––– ––– 1.73 50 110 °C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Notes  through „ are on page 9 www.irf.com 1 8/22/00 IRFR/U3707 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.027 9.7 13.2 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 13 VGS = 10V, ID = 15A ƒ mΩ 17.5 VGS = 4.5V, ID = 12A ƒ 3.0 V VDS = VGS, ID = 250µA 20 VDS = 24V, VGS = 0V µA 100 VDS = 24V, VGS = 0V, TJ = 125°C 200 VGS = 16V nA -200 VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 37 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 19 8.2 6.3 18 8.5 78 11.8 3.3 1990 707 50 Max. Units Conditions ––– S VDS = 15V, ID = 49.6A ––– ID = 24.8A ––– nC VDS = 15V ––– VGS = 4.5V ƒ 27 VGS = 0V, VDS = 15V ––– VDD = 15V ––– ID = 24.8A ns ––– RG = 1.8Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– VDS = 15V ––– pF ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. Max. Units ––– ––– 213 61 mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Qrr trr Qrr Reverse Reverse Reverse Reverse 2 Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– ––– 61„ ––– ––– 244 ––– ––– ––– ––– ––– ––– 0.88 0.8 39 49 42 62 1.3 ––– 59 74 63 93 A V ns nC ns nC Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 31A, VGS = 0V ƒ TJ = 125°C, I S = 31A, VGS = 0V ƒ TJ = 25°C, I F = 31A, VR=20V di/dt = 100A/µs ƒ TJ = 125°C, IF = 31A, VR=20V di/dt = 100A/µs ƒ www.irf.com IRFR/U3707 1000 1000 VGS 10.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V VGS 10.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V 100 3.5V 10 20µs PULSE WIDTH Tj = 25°C TOP ID, Drain-to-Source Current (A) ID , Drain-to-Source Current (A) TOP 100 1 3.5V 10 20µs PULSE WIDTH Tj = 175°C 1 0.1 1 10 100 0.1 VDS , Drain-to-Source Voltage (V) TJ = 25 ° C  TJ = 175 ° C  100  V DS = 15V 20µs PULSE WIDTH 6.0 7.0 8.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 5.0 100 Fig 2. Typical Output Characteristics 1000 4.0 10 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 3.0 1 ID = 61A  2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V  0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( ° C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFR/U3707 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 2500 Ciss  2000 1500 Coss  1000 500 10 VGS , Gate-to-Source Voltage (V)  3000 ID = 24.8A   VDS = 15V 8 6 4 2 C rss 0 0 1 10 0 100 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 30 40 OPERATION IN THIS AREA LIMITED BY R  DS(on) 100  10us TJ = 175 ° C  I D , Drain Current (A) ISD , Reverse Drain Current (A) 20 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 100 10 TJ = 25 ° C  1 0.1 0.2 V GS = 0 V  0.6 1.0 1.4 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 1.8  100us  1ms 10 1  10ms  TC = 25 ° C TJ = 175 ° C Single Pulse 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFR/U3707 RD VDS 70  LIMITED BY PACKAGE VGS 60 D.U.T. I D , Drain Current (A) RG + -VDD 50 10V 40 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 10 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20  0.10 PDM 0.05 0.1 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) t1 t2  Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 R DS(on) , Drain-to -Source On Resistance ( Ω ) R DS ( on ) , Drain-to-Source On Resistance ( Ω ) IRFR/U3707 0.10 0.09 VGS = 4.5V 0.08 0.07 0.06 0.05 0.04 VGS = 10V 0.03 0.02 0.01 0.00 0 50 100 150 200 0.013 0.012 0.011 ID = 31A 0.010 0.009 4.0 250 5.0 6.0 7.0 8.0 9.0 10.0 VGS, Gate -to -Source Voltage (V) ID , Drain Current ( A ) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS .2µF QGS .3µF D.U.T. + V - DS QGD VG VGS 3mA Charge IG ID Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveforms 15V V (B R )D S S tp L VD S D.U .T RG IA S 20 V tp IAS DRIVER + - VD D 0.0 1 Ω Fig 15a&b. Unclamped Inductive Test Circuit and Waveforms 6  600 EAS , Single Pulse Avalanche Energy (mJ) 50KΩ 12V A ID 10.1A 20.7A BOTTOM 24.8A TOP 500 400 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( ° C) Fig 15c. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRFR/U3707 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5 0 ) -A 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 4 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) 1.0 2 (.0 4 0 ) 1.6 4 (.0 2 5 ) 1 2 1 0 .4 2 (.4 1 0 ) 9 .4 0 (.3 7 0 ) 0 .5 1 (.0 2 0 ) M IN . -B 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 2X 1 .1 4 (.0 4 5 ) 0 .7 6 (.0 3 0 ) L E A D A S S IG N M E N T S 1 - GATE 3 2 - D R A IN 3 - S OU R CE 4 - D R A IN 0 .8 9 (.0 3 5 ) 3X 0 .6 4 (.0 2 5 ) 0 .2 5 ( .0 1 0 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) M A M B N O TE S : 2 .2 8 ( .0 9 0 ) 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 4 .5 7 ( .1 8 0 ) 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0 .1 6 (.0 0 6 ) . D-Pak (TO-252AA) Part Marking Information www.irf.com 7 IRFR/U3707 I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.26 5 ) 6 .3 5 (.25 0 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) -A 1 .2 7 ( .0 5 0 ) 0 .8 8 ( .0 3 5 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) L E A D A S S IG N M E N T S 4 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 ( .2 4 5 ) 5 .9 7 ( .2 3 5 ) 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 1 2 2.2 8 (.0 9 0) 1.9 1 (.0 7 5) 1 .1 4 (.0 45 ) 0 .7 6 (.0 30 ) 2 .28 (.0 9 0 ) 2X 3 - SOURCE 4 - D R A IN 3 -B - 3X 1 - GATE 2 - D R A IN 3X 9 .6 5 ( .3 8 0 ) 8 .8 9 ( .3 5 0 ) N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5M , 19 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R MS TO J E D E C O U T L IN E TO -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0.1 6 (.0 0 6 ). 0 .8 9 (.0 35 ) 0 .6 4 (.0 25 ) 1 .1 4 ( .0 4 5 ) 0 .8 9 ( .0 3 5 ) 0 .2 5 (.0 1 0 ) M A M B 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) I-Pak (TO-251AA) Part Marking Information 8 www.irf.com IRFR/U3707 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TR L 1 6 .3 ( .6 4 1 ) 1 5 .7 ( .6 1 9 ) 1 2 .1 ( .4 7 6 ) 1 1 .9 ( .4 6 9 ) FE E D D IR E C TIO N 1 6 .3 ( .64 1 ) 1 5 .7 ( .61 9 ) 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) FE E D D IR E C T IO N N O T ES : 1 . C O N T R O L L IN G D IM EN S IO N : M IL L IM ET E R . 2 . AL L D IM EN SIO N S AR E SH O W N IN M IL L IM ET E R S ( IN C H E S ). 3 . O U TL IN E C O N F O R M S T O E IA -4 81 & E IA -54 1 . 1 3 IN C H 16 m m N O T ES : 1 . O U TL IN E C O N F O R M S T O E IA-4 8 1 . Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 0.7 mH RG = 25Ω, IAS = 24.8 A. ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%. „ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 8/00 www.irf.com 9 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/