IRFR3711TRL

PD- 94061B IRFR3711 IRFU3711 SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity l 100% RG Tested Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current l HEXFET® Power MOSFET VDSS RDS(on) max ID 20V 6.5mΩ 110A„ D-Pak IRFR3711 I-Pak IRFU3711 Absolute Maximum Ratings Symbol Parameter Max Units 20 V VDS Drain-Source Voltage VGS ID @ TC = 25°C Gate-Source Voltage Continuous Drain Current, VGS @ 10V ± 20 100 ID @ TC = 100°C 69 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TA = 25°C Maximum Power Dissipation PD @TC = 25°C Maximum Power Dissipation TJ, TSTG Linear Derating Factor Junction and Storage Temperature Range c f f A 440 g 2.5 W 120 0.96 -55 to +150 W/°C °C Thermal Resistance Symbol Parameter h RθJC Junction-to-Case RθJA Junction-to-Ambient (PCB Mount) RθJA Junction-to-Ambient h gh Typ Max ––– 1.04 ––– 50 ––– 110 Units °C/W Notes  through † are on page 10 www.irf.com 1 1/27/04 IRFR/U3711 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Min Typ Max Units 20 ––– ––– ––– 0.022 ––– ––– 5.2 6.5 ––– 6.7 8.5 1.0 ––– 3.0 ––– ––– 140 ––– ––– 20 ––– ––– 100 Gate-to-Source Forward Leakage ––– ––– 200 Gate-to-Source Reverse Leakage ––– ––– -200 V Conditions VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ V VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A e e VDS = VGS, ID = 250µA VDS = 20V, VGS = 0V µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min Typ Max Units 53 ––– ––– Conditions gfs Forward Transconductance Qg Total Gate Charge ––– 29 44 ID = 15A Qgs Gate-to-Source Charge ––– 7.3 ––– VDS = 10V Qgd Gate-to-Drain ("Miller") Charge ––– 8.9 ––– Qoss Output Gate Charge ––– 33 ––– RG Gate Resistance 0.3 ––– 2.5 td(on) Turn-On Delay Time ––– 12 ––– VDD = 10V tr Rise Time ––– 220 ––– ID = 30A td(off) Turn-Off Delay Time ––– 17 ––– tf Fall Time ––– 12 ––– VGS = 4.5V Ciss Input Capacitance ––– 2980 ––– VGS = 0V Coss Output Capacitance ––– 1770 ––– Crss Reverse Transfer Capacitance ––– 280 ––– S nC VDS = 16V, ID = 30A e VGS = 4.5V VGS = 0V, VDS = 10V Ω ns pF RG = 1.8Ω e VDS = 10V ƒ = 1.0MHz Avalanche Characteristics Symbol EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ ––– Max 460 Units mJ ––– 30 A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current Min Typ ––– ––– (Body Diode) Pulsed Source Current c Max Units 110 f MOSFET symbol A ––– ––– 440 ––– 0.88 1.3 ––– 0.82 ––– showing the integral reverse (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time ––– 50 75 ns Qrr Reverse Recovery Charge ––– 61 92 nC trr Reverse Recovery Time ––– 48 72 ns Qrr Reverse Recovery Charge ––– 65 98 nC 2 Conditions V p-n junction diode. TJ = 25°C, IS = 30A, VGS = 0V e e TJ = 125°C, IS = 30A, VGS = 0V TJ = 25°C, IF = 16A, VR = 10V di/dt = 100A/µs e TJ = 125°C, IF = 16A, VR = 10V di/dt = 100A/µs e www.irf.com IRFR/U3711 1000 1000 VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 2.7V 100 2.7V 20µs PULSE WIDTH TJ = 25 °C 10 0.1 1 10 10 0.1 100 Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.0 TJ = 25 ° C TJ = 150 ° C 100 V DS = 25V 20µs PULSE WIDTH 4.0 5.0 6.0 7.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 1000 3.0 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 10 2.0 20µs PULSE WIDTH TJ = 150 ° C 8.0 ID = 110A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFR/U3711 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd C, Capacitance(pF) Coss = Cds + Cgd 10000 Ciss Coss 1000 Crss VGS , Gate-to-Source Voltage (V) 10 100000 ID = 30A VDS = 16V VDS = 10V 8 6 4 2 100 1 10 100 0 VDS , Drain-to-Source Voltage (V) 0 10 20 30 40 50 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 1000 1000 TJ = 150 ° C 10 TJ = 25 ° C 1 0.1 0.2 V GS = 0 V 0.8 1.4 2.0 VSD,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 2.6 100 100µsec 1msec 10 10msec Tc = 25°C Tj = 150°C Single Pulse 1 1 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFR/U3711 120 V DS LIMITED BY PACKAGE VGS ID , Drain Current (A) 100 RD D.U.T. RG + -VDD 80 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 60 40 Fig 10a. Switching Time Test Circuit VDS 20 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 PDM 0.10 0.1 t1 0.05 0.02 0.01 0.01 0.00001 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR/U3711 EAS , Single Pulse Avalanche Energy (mJ) 1400 15V TOP 1200 L VDS DRIVER BOTTOM ID 13A 19A 30A 1000 D.U.T RG + V - DD IAS 20V 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A 800 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF VGS QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform 6 ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFR/U3711 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ƒ + ‚ - - „ +  RG • • • • Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRFR/U3711 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 2.38 (.094) 2.19 (.086) 6.73 (.265) 6.35 (.250) -A1.27 (.050) 0.88 (.035) 5.46 (.215) 5.21 (.205) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 10.42 (.410) 9.40 (.370) 1 2 1 - GATE 0.51 (.020) MIN. -B1.52 (.060) 1.15 (.045) 3X 2X 1.14 (.045) 0.76 (.030) LEAD ASSIGNMENTS 3 0.89 (.035) 0.64 (.025) 0.25 (.010) 2 - DRAIN 3 - SOURCE 4 - DRAIN 0.58 (.023) 0.46 (.018) M A M B NOTES: 2.28 (.090) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 4.57 (.180) 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006). D-Pak (TO-252AA) Part Marking Information 8 www.irf.com IRFR/U3711 I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250) 2.38 (.094) 2.19 (.086) -A1.27 (.050) 0.88 (.035) 5.46 (.215) 5.21 (.205) 0.58 (.023) 0.46 (.018) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.52 (.060) 1.15 (.045) 1 2 LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 3 -B- NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2.28 (.090) 1.91 (.075) 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 9.65 (.380) 8.89 (.350) 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006). 3X 1.14 (.045) 0.76 (.030) 2.28 (.090) 2X 3X 1.14 (.045) 0.89 (.035) 0.89 (.035) 0.64 (.025) 0.25 (.010) M A M B 0.58 (.023) 0.46 (.018) I-Pak (TO-251AA) Part Marking Information www.irf.com 9 IRFR/U3711 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 1.0mH RG = 25Ω, IAS = 30A. … When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 † Rθ is measured at TJ approximately at 90°C ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 1/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/