IRFR4615PbF
IRFU4615PbF
HEXFET® Power MOSFET
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
VDSS
RDS(on) typ.
max.
ID
D
G
S
D
D
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Base Part Number
Package Type
IRFR4615PbF
IRFR4615TRLPbF
D-PAK
IRFU4615PbF
I-PAK
S
G
G
DPak
IRFR4615PbF
D
S
IPAK
IRFU4615PbF
G
D
S
Gate
Drain
Source
Standard Pack
Form
Quantity
Tube/Bulk
75
Tape and Reel Left
3000
Tube/Bulk
150V
34m:
42m:
33A
Orderable Part Number
IRFR4615PbF
IRFR4615TRLPbF
75
IRFU4615PbF
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
c
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
e
dv/dt
TJ
TSTG
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
c
d
Units
33
24
140
144
0.96
± 20
38
-55 to + 175
A
W
W/°C
V
V/ns
°C
300
109
See Fig. 14, 15, 22a, 22b,
c
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθJA
RθJA
Parameter
j
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
i
Typ.
Max.
Units
–––
–––
–––
1.045
50
110
°C/W
Notes through are on page 11
1
www.irf.com © 2013 International Rectifier
May 16, 2013
IRFR/U4615PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
RG(int)
Min. Typ. Max. Units
Conditions
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
150
–––
–––
3.0
–––
–––
–––
–––
–––
0.19
34
–––
–––
–––
–––
–––
–––
V VGS = 0V, ID = 250μA
––– V/°C Reference to 25°C, ID = 5mA
42
mΩ VGS = 10V, ID = 21A
5.0
V VDS = VGS, ID = 100μA
20
VDS = 150V, VGS = 0V
μA
250
VDS = 150V, VGS = 0V, TJ = 125°C
VGS = 20V
100
nA
-100
VGS = -20V
Internal Gate Resistance
–––
2.7
–––
c
f
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Min. Typ. Max. Units
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
g
h
35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
26
8.6
9.0
17
15
35
25
20
1750
155
40
179
382
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
S
VDS = 50V, ID = 21A
ID = 21A
VDS = 75V
nC
VGS = 10V
ID = 21A, VDS =0V, VGS = 10V
VDD = 98V
ID = 21A
ns
RG = 7.3Ω
VGS = 10V
VGS = 0V
VDS = 50V
(See Fig.5)
pF ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V (See Fig.11)
VGS = 0V, VDS = 0V to 120V
f
f
h
g
Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
VSD
trr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
2
c
www.irf.com © 2013 International Rectifier
Min. Typ. Max. Units
–––
–––
33
A
–––
–––
140
Conditions
MOSFET symbol
showing the
integral reverse
D
G
S
p-n junction diode.
––– –––
1.3
V TJ = 25°C, IS = 21A, VGS = 0V
TJ = 25°C
VR = 100V,
–––
70
–––
ns
T
=
125°C
IF = 21A
–––
83
–––
J
di/dt = 100A/μs
TJ = 25°C
––– 177 –––
nC
TJ = 125°C
––– 247 –––
–––
4.9
–––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
f
f
May 16, 2013
IRFR/U4615PbF
1000
1000
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
ID, Drain-to-Source Current (A)
100
BOTTOM
10
TOP
ID, Drain-to-Source Current (A)
TOP
1
5.0V
0.1
100
BOTTOM
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
10
5.0V
1
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
Tj = 25°C
Tj = 175°C
0.1
0.01
0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
3.0
TJ = 175°C
TJ = 25°C
10
1
VDS = 50V
≤60μs PULSE WIDTH
0.1
ID = 21A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
2
4
6
8
10
12
14
16
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
14.0
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
10000
C, Capacitance (pF)
10
Fig 2. Typical Output Characteristics
1000
Ciss
1000
Coss
Crss
100
10
ID= 21A
12.0
VDS= 120V
VDS= 75V
10.0
VDS= 30V
8.0
6.0
4.0
2.0
0.0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
www.irf.com © 2013 International Rectifier
0
5
10
15
20
25
30
35
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
May 16, 2013
IRFR/U4615PbF
1000
ID, Drain-to-Source Current (A)
100
T J = 175°C
T J = 25°C
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100μsec
1msec
10
10msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
1.6
ID, Drain Current (A)
35
30
25
20
15
10
5
0
75
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
40
50
1000
190
Id = 5mA
185
180
175
170
165
160
155
150
145
140
-60 -40 -20 0 20 40 60 80 100120140160180
T C , Case Temperature (°C)
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
3.0
EAS , Single Pulse Avalanche Energy (mJ)
500
2.5
2.0
1.5
1.0
0.5
0.0
-20
0
20
40
60
80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
100
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
25
10
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
Energy (μJ)
ISD, Reverse Drain Current (A)
1000
www.irf.com © 2013 International Rectifier
ID
TOP
2.8A
5.3A
BOTTOM 21A
450
400
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
May 16, 2013
IRFR/U4615PbF
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
τJ
0.01
R1
R1
τJ
τ1
R2
R2
R3
R3
τC
τ
τ1
τ2
τ3
τ2
τ3
τ4
τ4
Ci= τi/Ri
Ci i/Ri
1E-005
τi (sec)
0.02324
0.000008
0.26212
0.000106
0.50102
0.001115
0.25880
0.005407
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
Ri (°C/W)
R4
R4
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
0.01
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
120
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 21A
100
80
60
40
20
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
5
www.irf.com © 2013 International Rectifier
May 16, 2013
IRFR/U4615PbF
30
25
IF = 14A
V R = 100V
20
TJ = 25°C
TJ = 125°C
5.5
5.0
4.5
4.0
3.5
IRRM (A)
VGS(th) , Gate threshold Voltage (V)
6.0
ID = 100μA
3.0
ID = 250uA
10
ID = 1.0mA
ID = 1.0A
2.5
2.0
15
5
1.5
1.0
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
200
T J , Temperature ( °C )
600
800
1000
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
35
800
IF = 21A
V R = 100V
30
IF = 14A
V R = 100V
700
TJ = 25°C
TJ = 125°C
25
TJ = 25°C
TJ = 125°C
600
20
QRR (A)
IRRM (A)
400
diF /dt (A/μs)
15
500
400
10
300
5
200
0
100
0
200
400
600
800
1000
0
200
diF /dt (A/μs)
400
600
800
1000
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
1000
IF = 21A
V R = 100V
900
800
TJ = 25°C
TJ = 125°C
QRR (A)
700
600
500
400
300
200
100
0
200
400
600
800
1000
diF /dt (A/μs)
6
Fig. 20 - Typical Stored Charge vs. dif/dt
www.irf.com © 2013 International Rectifier
May 16, 2013
IRFR/U4615PbF
Driver Gate Drive
D.U.T
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
VGS
20V
+
V
- DD
IAS
A
0.01Ω
tp
I AS
Fig 22a. Unclamped Inductive Test Circuit
RD
VDS
Fig 22b. Unclamped Inductive Waveforms
VDS
90%
VGS
D.U.T.
RG
+
- VDD
V10V
GS
10%
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
Fig 23a. Switching Time Test Circuit
tr
t d(off)
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
12V
tf
.2μF
.3μF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 24a. Gate Charge Test Circuit
7
www.irf.com © 2013 International Rectifier
Qgs1 Qgs2
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
May 16, 2013
IRFR/U4615PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
WITH ASS EMBLY
LOT CODE 1234
AS S EMBLED ON WW 16, 2001
IN THE AS S EMBLY LINE "A"
PART NUMBER
INTERNATIONAL
RECT IFIER
LOGO
Note: "P" in as sembly line pos ition
indicates "Lead-Free"
IRFR120
116A
12
34
AS SEMBLY
LOT CODE
DAT E CODE
YEAR 1 = 2001
WEEK 16
LINE A
"P" in ass embly line position indicates
"Lead-Free" qualification to the consumer-level
OR
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
IRFR120
12
AS S EMBLY
LOT CODE
34
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
P = DES IGNAT ES LEAD-FREE
PRODUCT QUALIFIED T O THE
CONS UMER LEVEL (OPTIONAL)
YEAR 1 = 2001
WEEK 16
A = ASS EMBLY S ITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
www.irf.com © 2013 International Rectifier
May 16, 2013
IRFR/U4615PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: THIS IS AN IRFU120
WITH AS SEMBLY
LOT CODE 5678
AS SEMBLED ON WW 19, 2001
IN THE ASS EMBLY LINE "A"
INTERNAT IONAL
RECTIFIER
LOGO
PART NUMBER
IRFU120
119A
56
78
ASS EMBLY
LOT CODE
Note: "P" in ass embly line position
indicates Lead-Free"
DAT E CODE
YEAR 1 = 2001
WEEK 19
LINE A
OR
INTERNAT IONAL
RECTIFIER
LOGO
PART NUMBER
IRFU120
56
ASS EMBLY
LOT CODE
78
DATE CODE
P = DESIGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 1 = 2001
WEEK 19
A = ASS EMBLY S IT E CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
www.irf.com © 2013 International Rectifier
May 16, 2013
IRFR/U4615PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
TRL
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com © 2013 International Rectifier
May 16, 2013
IRFR/U4615PbF
†
Qualification Information
Qualification level
Moisture Sensitivity Level
Industrial
(per JEDEC JESD47F†† guidelines)
MSL1
D-PAK
(per JEDEC J-STD-020D††)
Not applicable
I-PAK
RoHS Compliant
Yes
† Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.51mH
RG = 25Ω, IAS = 21A, VGS =10V. Part not recommended for use
above this value .
ISD ≤ 21A, di/dt ≤ 549A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Revision History
Date
5/16/2013
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application
note #AN-994
Rθ is measured at TJ approximately 90°C
Comments
•Updated datasheet to new IR corporate formatting template
•Updated Orderable part number from "IRFR4615TRPbF" to "IRFR4615TRLPbF", on page 1
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
11
www.irf.com © 2013 International Rectifier
May 16, 2013
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
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