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IRFR7740TRPBF

IRFR7740TRPBF

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    SOT428

  • 描述:

    MOSFETN-CH75V87AD2PAK

  • 数据手册
  • 价格&库存
IRFR7740TRPBF 数据手册
StrongIRFET™ IRFR7740PbF IRFU7740PbF HEXFET® Power MOSFET Application  Brushed motor drive applications  BLDC motor drive applications  Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC inverters D   VDSS 75V RDS(on) typ. 6.0m max 7.2m G ID S 87A D Benefits  Improved gate, avalanche and dynamic dV/dt ruggedness  Fully characterized capacitance and avalanche SOA  Enhanced body diode dV/dt and dI/dt capability  Lead-free, RoHS compliant S G IRFR7740PbF D-Pak IRFU7740PbF I-Pak 20 S Source Orderable Part Number IRFR7740PbF IRFR7740TRPbF IRFU7740PbF 100 ID = 52A 80 15 10 T J = 125°C 5 60 40 20 T J = 25°C 0 0 0 5 10 15 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 D Drain Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tube 75 ID, Drain Current (A) RDS(on), Drain-to -Source On Resistance (m ) Package Type S D I-Pak IRFU7740PbF D-Pak IRFR7740PbF G Gate Base part number G www.irf.com © 2014 International Rectifier 25 50 75 100 125 150 175 T C , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback November 5, 2014 IRFR/U7740PbF   Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics  Symbol Parameter EAS (Thermally limited) Single Pulse Avalanche Energy  EAS (Thermally limited) Single Pulse Avalanche Energy  IAR Avalanche Current  Repetitive Avalanche Energy  EAR Thermal Resistance   Symbol Parameter Junction-to-Case  RJC Junction-to-Ambient (PCB Mount)  RJA Junction-to-Ambient  RJA Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS RG Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance Min. 75 ––– ––– ––– 2.1 ––– ––– ––– ––– ––– Max. 87 62 330 140 0.95 ± 20 Units A  W W/°C V -55 to + 175   °C   300 Max. 160 242 Units mJ   A mJ See Fig 15, 16, 23a, 23b Typ. ––– ––– ––– Max. 1.05 50 110 Units °C/W   Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 51 ––– mV/°C Reference to 25°C, ID = 1mA 6.0 7.2 m VGS = 10V, ID = 52A  7.0 ––– VGS = 6.0V, ID = 26A   ––– 3.7 V VDS = VGS, ID = 100µA ––– 1.0 VDS =75 V, VGS = 0V µA ––– 150 VDS =75V,VGS = 0V,TJ =125°C ––– 100 VGS = 20V nA ––– -100 VGS = -20V 2.2 –––  Notes:  Repetitive rating; pulse width limited by max. junction temperature.  Limited by TJmax, starting TJ = 25°C, L = 120µH, RG = 50, IAS = 52A, VGS =10V.  ISD  52A, di/dt  570A/µs, VDD  V(BR)DSS, TJ 175°C.  Pulse width  400µs; duty cycle  2%.  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.  R is measured at TJ approximately 90°C. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf  Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 22A, VGS =10V 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 5, 2014 IRFR/U7740PbF   Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg – Qgd) Turn-On Delay Time Rise Time Min. 110 ––– ––– ––– ––– ––– ––– Typ. ––– 84 20 26 58 10 36 td(off) Turn-Off Delay Time ––– 55 tf Ciss Coss Crss Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) ––– ––– ––– ––– 30 4430 370 230 ––– 340 ––– VGS = 0V, VDS = 0V to 60V ––– 440 ––– VGS = 0V, VDS = 0V to 60V Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– 87 ––– ––– 330 Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 dv/dt Peak Diode Recovery dv/dt trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ––– ––– ––– ––– ––– ––– 12 35 40 45 61 2.3 ––– ––– ––– ––– ––– ––– Coss eff.(ER) Coss eff.(TR) Max. Units Conditions ––– S VDS = 25V, ID = 52A 126 ID = 52A ––– VDS = 38V nC   ––– VGS = 10V  ––– ––– VDD = 38V ––– ID = 52A ns ––– RG= 2.7 VGS = 10V  ––– ––– ––– ––– pF   VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig.7 Diode Characteristics   Symbol IS ISM 3 www.irf.com © 2014 International Rectifier A V D G S TJ = 25°C,IS = 52A,VGS = 0V  V/ns TJ = 175°C,IS = 52A,VDS = 75V  TJ = 25°C VDD = 64V ns TJ = 125°C IF = 52A, TJ = 25°C di/dt = 100A/µs  nC TJ = 125°C   A TJ = 25°C  Submit Datasheet Feedback November 5, 2014 IRFR/U7740PbF   1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 4.5V 10 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 10 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 175°C Tj = 25°C 1 1 0.1 1 10 0.1 100 1 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 1000 100 T J = 175°C 10 T J = 25°C 1 VDS = 25V 60µs PULSE WIDTH 2.0 3.0 4.0 5.0 ID = 52A V GS = 10V 2.5 2.0 1.5 1.0 0.5 0.0 0.1 -60 -40 -20 0 20 40 60 80 100120140160180 6.0 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Fig 6. Normalized On-Resistance vs. Temperature Fig 5. Typical Transfer Characteristics 100000 14.0 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd VGS, Gate-to-Source Voltage (V) ID= 52A Coss = Cds + Cgd C, Capacitance (pF) 100 Fig 4. Typical Output Characteristics Fig 3. Typical Output Characteristics 10000 Ciss Coss 1000 Crss 100 12.0 10.0 VDS= 60V 8.0 VDS= 15V VDS= 38V 6.0 4.0 2.0 0.0 1 10 100 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage 4 10 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) www.irf.com © 2014 International Rectifier 0 20 40 60 80 100 120 QG, Total Gate Charge (nC) Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback November 5, 2014 IRFR/U7740PbF   1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 TJ = 175°C 10 TJ = 25°C 1 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 1 10msec 0.1 DC Tc = 25°C Tj = 175°C Single Pulse V GS = 0V 0.01 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1.4 1 10 VDS, Drain-toSource Voltage (V) V SD, Source-to-Drain Voltage (V) Fig 10. Maximum Safe Operating Area Fig 9. Typical Source-Drain Diode Forward Voltage 0.9 95 Id = 1.0mA 0.8 0.7 90 0.6 Energy (µJ) V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 100µsec 1msec 100 85 0.5 0.4 0.3 80 0.2 0.1 0.0 75 -10 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Temperature ( °C ) 0 10 20 30 40 50 60 70 80 VDS, Drain-to-Source Voltage (V) Fig 11. Drain-to-Source Breakdown Voltage Fig 12. Typical Coss Stored Energy RDS(on), Drain-to -Source On Resistance ( m) 11.0 VGS = 5.5V VGS = 6.0V 10.0 VGS = 7.0V VGS = 8.0V VGS =10V 9.0 8.0 7.0 6.0 0 50 100 150 200 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 5, 2014 IRFR/U7740PbF   Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming  Tj = 150°C and Tstart = 25°C (Single Pulse) 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Avalanche Current vs. Pulse Width 200 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 52A EAR , Avalanche Energy (mJ) 160 120 80 40 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature 6 www.irf.com © 2014 International Rectifier Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav   Submit Datasheet Feedback November 5, 2014 IRFR/U7740PbF   16 IF = 35A V R = 64V TJ = 25°C 3.5 12 TJ = 125°C 3.0 2.5 IRRM (A) V GS(th) , Gate threshold Voltage (V) 4.0 ID = 100µA ID = 250µA 2.0 ID = 1.0mA ID = 1.0A 1.5 4 1.0 -75 -50 -25 8 0 0 25 50 75 100 125 150 175 0 200 TJ , Temperature ( °C ) 600 800 1000 diF /dt (A/µs) Fig 18. Typical Recovery Current vs. dif/dt Fig 17. Threshold Voltage vs. Temperature 20 300 16 IF = 52A V R = 64V 250 TJ = 25°C TJ = 125°C IF = 35A V R = 64V TJ = 25°C 200 TJ = 125°C 12 QRR (nC) IRRM (A) 400 8 150 100 4 50 0 0 0 200 400 600 800 1000 0 200 diF /dt (A/µs) 400 600 800 1000 diF /dt (A/µs) Fig 19. Typical Recovery Current vs. dif/dt Fig 20. Typical Stored Charge vs. dif/dt QRR (nC) 300 250 IF = 52A V R = 64V TJ = 25°C 200 TJ = 125°C 150 100 50 0 0 200 400 600 800 1000 diF /dt (A/µs) Fig 21. Typical Stored Charge vs. dif/dt 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 5, 2014 IRFR/U7740PbF   Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V DRIVER L VDS D.U.T RG IAS 20V tp + V - DD A I AS 0.01 Fig 23a. Unclamped Inductive Test Circuit Fig 24a. Switching Time Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24b. Switching Time Waveforms Id Vds Vgs VDD  Vgs(th) Qgs1 Qgs2 Fig 25a. Gate Charge Test Circuit 8 www.irf.com © 2014 International Rectifier Qgd Qgodr Fig 25b. Gate Charge Waveform Submit Datasheet Feedback November 5, 2014 IRFR/U7740PbF   D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches)) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 2001 IN THE ASSEMBLY LINE "A" PART NUMBER INTERNATIONAL RECTIFIER LOGO Note: "P" in assembly line position indicates "Lead-Free" IRFR120 12 116A 34 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 16 LINE A "P" in assembly line position indicates "Lead-Free" qualification to the consumer-level OR INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFR120 12 ASSEMBLY LOT CODE 34 DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) P = DESIGNATES LEAD-FREE PRODUCT QUALIFIED TO THE CONSUMER LEVEL (OPTIONAL) YEAR 1 = 2001 WEEK 16 A = ASSEMBLY SITE CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 5, 2014 IRFR/U7740PbF   I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches)) I-Pak (TO-251AA) Part Marking Information EXAMPLE: THIS IS AN IRFU120 WITH ASSEMBLY LOT CODE 5678 ASSEMBLED ON WW 19, 2001 IN THE ASSEMBLY LINE "A" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFU120 119A 56 78 ASSEMBLY LOT CODE Note: "P" in assembly line position indicates Lead-Free" DATE CODE YEAR 1 = 2001 WEEK 19 LINE A OR INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFU120 56 ASSEMBLY LOT CODE 78 DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 1 = 2001 WEEK 19 A = ASSEMBLY SITE CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 5, 2014 IRFR/U7740PbF   D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 5, 2014 IRFR/U7740PbF   Qualification Information†   Industrial (per JEDEC JESD47F) †† Qualification Level   Moisture Sensitivity Level D-Pak MSL1 I-Pak Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date 11/5/2014 Comment Updated EAS (L =1mH) = 242mJ on page 2 Updated note 9 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 22A, VGS =10V” on page 2 IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 5, 2014 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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