IRFR825PBF

PD - 96433A IRFR825TRPbF HEXFET® Power MOSFET Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications VDSS RDS(on) typ. Trr typ. 500V ID 92ns 1.05Ω 6.0A D Features and Benefits • Fast body diode eliminates the need for external diodes in ZVS applications. • Lower Gate charge results in simpler drive requirements. • Higher Gate voltage threshold offers improved noise immunity. S G D-Pak IRFR825TRPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V Max. 6.0 Units ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 3.9 A IDM 24 Pulsed Drain Current PD @TC = 25°C Power Dissipation c VGS Linear Derating Factor Gate-to-Source Voltage dv/dt TJ Peak Diode Recovery dv/dt Operating Junction and TSTG e W 1.0 ± 20 W/°C V 9.9 -55 to + 150 V/ns Storage Temperature Range °C 300 (1.6mm from case ) Soldering Temperature, for 10 seconds Diode Characteristics IS Parameter Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr Qrr 119 Min. Typ. Max. Units Conditions MOSFET symbol D ––– ––– 6.0 (Body Diode) Diode Forward Voltage ––– ––– 24 ––– ––– 1.2 V p-n junction diode. TJ = 25°C, IS = 6.0A, VGS = 0V Reverse Recovery Time ––– 92 138 ns TJ = 25°C, IF = 6.0A ––– 152 228 c Reverse Recovery Charge IRRM Reverse Recovery Current ton Forward Turn-On Time A showing the integral reverse G TJ = 125°C, di/dt = 100A/μs f ––– 167 251 ––– 292 438 nC TJ = 25°C, IS = 6.0A, VGS = 0V TJ = 125°C, di/dt = 100A/μs ––– 3.6 5.4 A f S f f TJ = 25°C, IS = 6.0A, VGS = 0V di/dt = 100A/μs f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes  through ‡ are on page 2 www.irf.com 1 12/19/12 IRFR825TRPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 500 ––– ––– 3.0 ––– ––– ––– ––– ––– 0.33 1.05 ––– ––– ––– ––– ––– ––– ––– 1.3 5.0 25 2.0 100 -100 V V/°C Ω V μA mA nA Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 3.7A VDS = VGS, ID = 250μA VDS = 500V, VGS = 0V VDS = 400V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V f Dynamic @ TJ = 25°C (unless otherwise specified) Parameter gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Coss eff. (ER) Min. Typ. Max. Units Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Effective Output Capacitance (Energy Related) 7.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 8.5 25 30 20 1346 76 15 1231 25 51 ––– 34 11 14 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 43 ––– S nC ns Conditions VDS = 50V, ID = 3.7A ID = 6.0A VDS = 400V VGS = 10V, See Fig.14a &14b VDD = 250V ID = 6.0A RG =7.5Ω VGS = 10V, See Fig. 15a & 15b VGS = 0V VDS = 25V ƒ = 1.0KHz, See Fig. 5 VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 400V, ƒ = 1.0MHz f f pF VGS = 0V,VDS = 0V to 400V g Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy c Thermal Resistance c Parameter RθJC RθJA RθJA h Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient Max. 178 3 11.9 Units ––– ––– ––– Typ. Max. Units ––– ––– ––– 1.05 50 110 °C/W Typ. d i mJ A mJ Notes: … Coss eff. is a fixed capacitance that gives the same charging time as  Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) ‚ Starting TJ = 25°C, L = 40mH, RG = 25Ω,I AS = 3.0A. (See Figure 13). ƒ ISD = 6.0A, di/dt ≤ 416A/μs, VDDV(BR)DSS,TJ ≤ 150°C. „ Pulse width ≤ 300μs; duty cycle ≤ 2%. C oss while VDS is rising from 0 to 80% VDSS. Coss eff.(ER) is a fixed capacitance that stores the same energy as C oss while VDS is rising from 0 to 80% V DSS. † Rθ is measured at TJ approximately 90°C ‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniquea refer to applocation note # AN- 994 echniques refer to application note #AN-994. 2 www.irf.com IRFR825TRPbF 100 100 10 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.8V 5.5V 5.3V 1 5.3V 0.1 10 BOTTOM 5.3V 1 0.1 ≤60μs PULSE WIDTH Tj = 150°C ≤60μs PULSE WIDTH Tj = 25°C 0.01 0.01 0.1 1 10 0.1 100 1 10 100 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) 100 ID, Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.8V 5.5V 5.3V 10 T J = 150°C TJ = 25°C 1 VDS = 50V ≤60μs PULSE WIDTH 4 6 8 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com ID = 6.0A VGS = 10V 1.9 1.6 1.3 1.0 0.7 0.4 0.1 2 2.2 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature 3 100000 VGS = 0V, f = 1 KHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C, Capacitance (pF) 10000 C oss = Cds + C gd Ciss 1000 100 Coss 10 Crss 1 1 10 100 1000 V(BR)DSS , Drain-to-Source Breakdown Voltage (V) IRFR825TRPbF 625 Id = 1mA 600 575 550 525 500 -60 -40 -20 0 T J , Temperature ( °C ) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typ. Breadown Voltage vs. Temperature 100 ID= 6.0A 12 VDS= 400V VDS= 250V 10 ISD, Reverse Drain Current (A) VGS, Gate-to-Source Voltage (V) 14 VDS= 100V 8 6 4 2 10 T J = 150°C TJ = 25°C 1 VGS = 0V 0 0.1 0 5 10 15 20 25 QG, Total Gate Charge (nC) 4 20 40 60 80 100 120 140 160 30 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) www.irf.com IRFR825TRPbF RDS (on) , Drain-to-Source On Resistance (Ω) 7 ID, Drain Current (A) 6 5 4 3 2 1 0 25 50 75 100 125 150 2.0 1.8 1.6 1.4 1.2 VGS = 10V 1.0 0.8 0 2 4 6 8 10 12 ID , Drain Current (A) T C , Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 9. Typical Rdson Vs. Drain Current Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 0.01 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR825TRPbF 800 OPERATION IN THIS AREA LIMITED BY R DS(on) EAS , Single Pulse Avalanche Energy (mJ) ID, Drain-to-Source Current (A) 100 100μsec 10 1msec 10msec 1 Tc = 25°C Tj = 150°C Single Pulse DC 0.1 ID 0.59A 1.02A BOTTOM 3.0A 700 TOP 600 500 400 300 200 100 0 1 10 100 1000 VDS, Drain-toSource Voltage (V) 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 12. Maximum Safe Operating Area Fig 13. Maximum Avalanche Energy vs. Drain Current V(BR)DSS 15V tp DRIVER L VDS D.U.T RG + V - DD IAS 20V tp A 0.01Ω I AS Fig 13a. Unclamped Inductive Test Circuit Fig 13b. Unclamped Inductive Waveforms Id Vds Vgs L DUT 0 1K S VCC Vgs(th) Qgs1 Qgs2 Fig 14a. Gate Charge Test Circuit 6 Qgd Qgodr Fig 14b. Gate Charge Waveform www.irf.com IRFR825TRPbF RD VDS VDS 90% V GS D.U.T. RG + - VDD 10% VGS V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 td(on) Fig 15a. Switching Time Test Circuit D.U.T td(off) Driver Gate Drive + ‚ P.W. - Reverse Recovery Current VDD P.W. Period D.U.T. ISD Waveform + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test D= *  • • • • Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer -„ tf Fig 15b. Switching Time Waveforms + ƒ RG tr + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRFR825TRPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H AS S EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 2001 IN T HE AS SEMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO Note: "P" in as s embly line pos ition indicates "Lead-Free" IRF R120 12 116A 34 ASS EMBLY LOT CODE DAT E CODE YEAR 1 = 2001 WEEK 16 LINE A "P" in as s embly line pos ition indicates "Lead-Free" qualification to the cons umer-level OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFR120 12 AS S EMBLY LOT CODE 34 DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) P = DES IGNAT ES LEAD-FREE PRODUCT QUALIFIED T O T HE CONS UMER LEVEL (OPT IONAL) YEAR 1 = 2001 WEEK 16 A = AS SEMBLY S IT E CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRFR825TRPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/2012 www.irf.com 9 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 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