IRFR8314PbF
HEXFET® Power MOSFET
Application
Optimized for UPS/Inverter Applications
Low Voltage Power Tools
D
G
VDSS
30
RDS(on) max
(@ VGS = 10V)
2.2
(@ VGS = 4.5V)
3.1
Qg (typical)
40
ID (Silicon Limited)
179
ID (Package Limited)
90A
S
Benefits
Fully Characterized Avalanche Voltage and Current
Lead-Free, RoHS Compliant
V
m
nC
A
D
S
G
D-Pak
G
Gate
Base part number
Package Type
IRFR8314PbF
D-Pak
Standard Pack
Form
Quantity
Tape and Reel
D
Drain
S
Source
Orderable Part Number
2000
IRFR8314TRPbF
Absolute Maximum Rating
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 100°C
TJ
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
TSTG
Thermal Resistance
Symbol
Parameter
Junction-to-Case
RJC
Junction-to-Ambient (PCB Mount)
RJA
Junction-to-Ambient
RJA
Max.
30
± 20
179
127
90
357
125
63
0.83
Units
V
A
W
W
W/°C
-55 to + 175
°C
300
Typ.
–––
–––
–––
Max.
1.2
50
110
Units
°C/W
Notes through are on page 9
1
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IRFR8314PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
1.2
Typ. Max. Units
Conditions
––– –––
V VGS = 0V, ID = 250µA
18
––– mV/°C Reference to 25°C, ID = 1mA
1.6
2.2
m VGS = 10V, ID = 90A
2.6
3.1
VGS = 4.5V, ID = 72A
1.7
2.2
V VDS = VGS, ID = 100µA
VGS(th)/TJ
Gate Threshold Voltage Coefficient
IDSS
Drain-to-Source Leakage Current
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
RG
td(on)
tr
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
189
–––
–––
–––
–––
–––
–––
–––
–––
–––
-7.0
–––
–––
–––
–––
–––
36
10
7.7
10
8.3
20
2.0
19
98
td(off)
Turn-Off Delay Time
–––
28
–––
tf
Ciss
Coss
Crss
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
30
4945
908
493
–––
–––
–––
–––
IGSS
Min.
30
–––
–––
–––
––– mV/°C
1.0
VDS =24 V, VGS = 0V
µA
150
VDS =24V,VGS = 0V,TJ =125°C
100
VGS = 20V
nA
-100
VGS = -20V
–––
S VDS = 15V, ID =72A
54
–––
VDS = 15V
–––
nC VGS = 4.5V
–––
ID = 72A
–––
–––
–––
–––
VDD = 15V
–––
ns ID = 72A
RG= 1.8
VGS = 4.5V
VGS = 0V
pF VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
EAS (tested)
Single Pulse Avalanche Energy Tested Value
IA
Avalanche Current
180
279
72
mJ
A
Diode Characteristics
Symbol
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ. Max. Units
–––
––– 179
–––
–––
357
VSD
Diode Forward Voltage
–––
–––
1.0
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
31
87
47
130
IS
ISM
2
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A
V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C,IS = 72A,VGS = 0V
ns TJ = 25°C IF = 72A ,VDD=15V
nC di/dt = 360A/µs
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IRFR8314PbF
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
5.5V
4.5V
4.0V
3.5V
3.3V
3.0V
2.8V
BOTTOM
100
10
2.8V
2.8V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
10
1
0.1
1
10
0.1
100
1000
100
2.0
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
T J = 175°C
T J = 25°C
10
1
VDS = 15V
60µs PULSE WIDTH
0.1
1
2
3
4
5
ID = 90A
VGS = 10V
1.5
1.0
0.5
6
-60 -40 -20 0 20 40 60 80 100120140160180
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
100000
VGS, Gate-to-Source Voltage (V)
ID= 72A
10000
Ciss
Coss
1000
Fig 4. Normalized On-Resistance vs. Temperature
14
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Crss
100
12
VDS= 24V
VDS= 15V
10
8
6
4
2
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
C, Capacitance (pF)
VGS
10V
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
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0
20
40
60
80
100
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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IRFR8314PbF
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100µsec
T J = 175°C
100
T J = 25°C
10
1
100
1msec
LIMITED BY PACKAGE
10
OPERATION IN THIS
AREA LIMITED BY R DS(on)
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1.6
1
10
VDS, Drain-toSource Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
2.5
180
VGS(th) , Gate threshold Voltage (V)
200
Limited By Package
160
ID, Drain Current (A)
DC
140
120
100
80
60
40
2.0
1.5
ID = 150µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
1.0
0.5
20
0.0
0
25
50
75
100
125
150
-75 -50 -25 0
175
25 50 75 100 125 150 175 200
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage vs. Temperature
Thermal Response ( Z thJC ) °C/W
10
1
0.1
0.01
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFR8314PbF
8
800
ID = 90A
6
4
TJ = 125°C
2
TJ = 25°C
0
2
4
6
8
10
12
14
16
18
VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance vs. Gate Voltage
5
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance (m)
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20
ID
16A
33A
BOTTOM 72A
700
TOP
600
500
400
300
200
100
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
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IRFR8314PbF
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
I AS
0.01
Fig 15a. Unclamped Inductive Test Circuit
Fig 15b. Unclamped Inductive Waveforms
Fig 16a. Switching Time Test Circuit
Fig 16b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 17a. Gate Charge Test Circuit
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Qgd
Qgodr
Fig 17b. Gate Charge Waveform
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IRFR8314PbF
D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
WITH ASSEMBLY
LOT CODE 1234
ASSEMBLED ON WW 16, 2001
IN THE ASSEMBLY LINE "A"
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
Note: "P" in assembly line position
indicates "Lead-Free"
IRFR120
12
116A
34
ASSEMBLY
LOT CODE
DATE CODE
YEAR 1 = 2001
WEEK 16
LINE A
"P" in assembly line position indicates
"Lead-Free" qualification to the consumer-level
OR
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
IRFR120
12
ASSEMBLY
LOT CODE
34
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
P = DESIGNATES LEAD-FREE
PRODUCT QUALIFIED TO THE
CONSUMER LEVEL (OPTIONAL)
YEAR 1 = 2001
WEEK 16
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRFR8314PbF
D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRFR8314PbF
Qualification Information†
Industrial
Qualification Level
(per JEDEC JESD47F) ††
D-Pak
Moisture Sensitivity Level
MSL1
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC standard at the time of product release.
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is
90A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.07mH, RG = 50, IAS = 72A, VGS =10V.
Pulse width 400µs; duty cycle 2%.
R is measured at TJ approximately 90°C.
This value determined from sample failure population, starting TJ =25°C,
L=0.07mH, RG = 50, IAS = 72A, VGS =10V.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.please refer to application note to AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
Revision History
Date
07/01/2014
Comments
The Device is active without bulk part which is removed from Table on page 1
IR WORLD HEADQUARTERS: 101N Sepulveda Blvd, El Segundo, California 90245, USA
To contact Interna onal Rec fier, please visit h p://www.irf.com/whoto‐call/
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IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
