IRFS33N15D

PD- 93903 IRFB33N15D IRFS33N15D IRFSL33N15D SMPS MOSFET HEXFET® Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS 150V RDS(on) max ID 0.056Ω 33A l TO-220AB IRFB33N15D D2Pak IRFS33N15D TO-262 IRFSL33N15D Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† Max. 33 24 130 3.8 170 1.1 ± 30 4.4 -55 to + 175 Units A W W/°C V V/ns °C 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typical SMPS Topologies l Telecom 48V input Active Clamp Forward Converter Notes  through ‡ www.irf.com are on page 11 1 6/29/00 IRFB/IRFS/IRFSL33N15D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 150 ––– ––– V V GS = 0V, ID = 250µA ––– 0.18 ––– V/°C Reference to 25°C, I D = 1mA † ––– ––– 0.056 Ω VGS = 10V, ID = 20A „ 3.0 ––– 5.5 V VDS = VGS, ID = 250µA ––– ––– 25 VDS = 150V, VGS = 0V µA ––– ––– 250 VDS = 120V, VGS = 0V, TJ = 150°C ––– ––– 100 VGS = 30V nA ––– ––– -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 14 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 60 17 27 13 38 23 21 2020 400 91 2440 180 320 Max. Units Conditions ––– S VDS = 50V, ID = 20A 90 ID = 20A 26 nC VDS = 120V 41 VGS = 10V, „† ––– VDD = 75V ––– ID = 20A ns ––– RG = 3.6Ω ––– VGS = 10VΩ „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz† ––– VGS = 0V, V DS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 120V … Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚† Avalanche Current Repetitive Avalanche Energy Typ. Max. Units ––– ––– ––– 330 20 17 mJ A mJ Typ. Max. Units ––– 0.50 ––– ––– 0.90 ––– 62 40 Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface † Junction-to-Ambient† Junction-to-Ambient‡ °C/W Diode Characteristics IS ISM VSD trr Qrr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) † Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 33 ––– ––– showing the A G integral reverse ––– ––– 130 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 20A, VGS = 0V „ ––– 150 ––– ns TJ = 25°C, IF = 20A ––– 920 ––– nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFB/IRFS/IRFSL33N15D 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 100 10 1 4.5V 20µs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 10 4.5V 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) 100 TJ = 175 ° C 10 TJ = 25 ° C 1 V DS = 50V 20µs PULSE WIDTH 5 6 7 8 9 10 11 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 1000 4 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 0.1 20µs PULSE WIDTH TJ = 175 °C 1 0.1 100 VDS , Drain-to-Source Voltage (V) I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 12 ID = 33A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFB/IRFS/IRFSL33N15D VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 10000 Ciss 1000 Coss 100 Crss VGS , Gate-to-Source Voltage (V) 20 100000 10 100 VDS = 120V VDS = 75V VDS = 30V 16 12 8 4 10 1 ID = 20A FOR TEST CIRCUIT SEE FIGURE 13 0 1000 0 20 VDS , Drain-to-Source Voltage (V) 60 80 100 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ISD , Reverse Drain Current (A) 40 QG , Total Gate Charge (nC) 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) 100 TJ = 175 ° C 10 TJ = 25 ° C 10us 100us 10 1ms 1 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 100 TC = 25 ° C TJ = 175 ° C Single Pulse 1 1.4 1 10ms 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFB/IRFS/IRFSL33N15D 35 RD VDS VGS 30 D.U.T. I D , Drain Current (A) RG + -VDD 25 10V 20 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 15 Fig 10a. Switching Time Test Circuit 10 VDS 5 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 0.00001 P DM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFB/IRFS/IRFSL33N15D 800 D R IV E R L VDS D .U .T RG + V - DD IA S 20V tp A 0 .0 1 Ω Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp EAS , Single Pulse Avalanche Energy (mJ) 1 5V TOP BOTTOM ID 8.1A 14A 20A 600 400 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 10 V 50KΩ 12V .2µF .3µF QGS QGD D.U.T. VG + V - DS VGS 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFB/IRFS/IRFSL33N15D Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ƒ + ‚ - - „ +  • • • • RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. D= Period + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRFB/IRFS/IRFSL33N15D TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 ) 1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) -B - 3 .7 8 (.1 4 9 ) 3 .5 4 (.1 3 9 ) 4 .6 9 (.1 8 5 ) 4 .2 0 (.1 6 5 ) -A - 1 .3 2 (.0 5 2 ) 1 .2 2 (.0 4 8 ) 6.4 7 (.2 5 5 ) 6.1 0 (.2 4 0 ) 4 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1 .1 5 (.0 4 5 ) M IN 1 2 3 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) 4 .0 6 (.1 6 0 ) 3 .5 5 (.1 4 0 ) 3X 3X 1 .4 0 (.0 5 5 ) 1 .1 5 (.0 4 5 ) L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S OU RC E 4 - D R A IN 0 .9 3 (.0 3 7 ) 0 .6 9 (.0 2 7 ) 0 .3 6 (.0 1 4 ) 3X M B A M 0 .5 5 (.0 2 2 ) 0 .4 6 (.0 1 8 ) 2 .9 2 (.1 1 5 ) 2 .6 4 (.1 0 4 ) 2 .5 4 (.1 0 0) 2X N O TE S : 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H 3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O -2 2 0 A B . 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S . TO-220AB Part Marking Information E X A M P L E : T H IS IS A N IR F 1 0 1 0 W IT H A S S E M B L Y LOT C ODE 9B1M A IN T E R N A T IO N A L R E C T IF IE R LOGO ASSEMBLY LOT CODE 8 PART NU M BER IR F 1 0 1 0 9246 9B 1M D ATE CO DE (Y Y W W ) YY = YEAR W W = W EEK www.irf.com IRFB/IRFS/IRFSL33N15D D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A- 1.3 2 (.05 2) 1.2 2 (.04 8) 2 1.7 8 (.07 0) 1.2 7 (.05 0) 1 1 0.16 (.4 00 ) RE F. -B - 4.69 (.1 85) 4.20 (.1 65) 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 3 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 5 .28 (.20 8) 4 .78 (.18 8) 3X 1.40 (.0 55) 1.14 (.0 45) 3X 5 .08 (.20 0) 0.5 5 (.022 ) 0.4 6 (.018 ) 0 .93 (.03 7 ) 0 .69 (.02 7 ) 0 .25 (.01 0 ) M 8.8 9 (.3 50 ) R E F. 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) B A M M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S. LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E 8.89 (.3 50 ) 17 .78 (.70 0) 3 .8 1 (.15 0) 2 .08 (.08 2) 2X 2.5 4 (.100 ) 2X D2Pak Part Marking Information IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E www.irf.com A PART NUM BER F530S 9 24 6 9B 1M DATE CODE (Y YW W ) YY = Y E A R W W = W EEK 9 IRFB/IRFS/IRFSL33N15D TO-262 Package Outline TO-262 Part Marking Information 10 www.irf.com IRFB/IRFS/IRFSL33N15D D2Pak Tape & Reel Information TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 ( .1 6 1 ) 3 .9 0 ( .1 5 3 ) F E E D D IR E C TIO N 1 .8 5 ( .0 7 3 ) 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 1 1.6 0 (.4 57 ) 1 1.4 0 (.4 49 ) 1 .6 5 ( .0 6 5 ) 0.3 6 8 (.01 4 5 ) 0.3 4 2 (.01 3 5 ) 1 5 .42 (.60 9 ) 1 5 .22 (.60 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TRL 1 0.9 0 (.4 2 9) 1 0.7 0 (.4 2 1) 1 .75 (.06 9 ) 1 .25 (.04 9 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) 16 .1 0 (.63 4 ) 15 .9 0 (.62 6 ) F E E D D IR E C T IO N 13.50 (.532 ) 12.80 (.504 ) 2 7.4 0 (1.079 ) 2 3.9 0 (.9 41) 4 3 30 .00 ( 14.1 73 ) MAX. Notes: N O TE S : 1 . CO M F OR M S TO E IA -418 . 2 . CO N TR O L LIN G D IM E N SIO N : M IL LIM E T ER . 3 . DIM E NS IO N M EA S UR E D @ H U B. 4 . IN C LU D ES FL AN G E DIST O R T IO N @ O UT E R E D G E.  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 1.7mH RG = 25Ω, IAS = 20A. ƒ ISD ≤ 20A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 6 0.0 0 (2.36 2) M IN . 26 .40 (1 .03 9) 24 .40 (.9 61 ) 3 30.4 0 (1.19 7) M A X. 4 „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS † This is only applied to TO-220AB package ‡ This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 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