IRFS4321-7PPBF

IRFS4321-7PPbF Application  Motion Control Applications  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply  Hard Switched and High Frequency Circuits HEXFET® Power MOSFET   VDSS 150V RDS(on) typ. 11.7m D G max S Benefits Low Rdson Reduces Losses Low Gate Charge Improves the Switching Performance Improved Diode Recovery Improves Switching & EMI Performance  30V Gate Voltage Rating Improves Robustness  Fully Characterized Avalanche SOA 14.7m ID 86A    Base part number Package Type IRFS4321-7PPbF D2Pak-7Pin D2Pak 7Pin G D S Gate Drain Source Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 Orderable Part Number IRFS4321-7PPbF IRFS4321TRL7PP Parameter Continuous Drain Current, VGS @ 10V Max. 86 Units ID @ TC = 25°C ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 61 A IDM Pulsed Drain Current  343 PD @TC = 25°C Maximum Power Dissipation 350 W Linear Derating Factor 2.3 W/°C VGS EAS (Thermally limited) TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy  Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) ± 30 120 V mJ -55 to + 175   °C   300 Thermal Resistance   Parameter Junction-to-Case  Junction-to-Ambient  RJC RJA Typ. ––– ––– Max. 0.43* 40 Units °C/W   RJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C and is accounted for by the physical wear out of the die attach medium. Notes through  are on page 2 1 www.irf.com © 2013 International Rectifier June 14, 2013 IRFS4321-7PPbF   Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units 150 ––– ––– V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 150 ––– mV/°C Reference to 25°C, ID = 1mA  RDS(on) Static Drain-to-Source On-Resistance ––– 11.7 14.7 VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 IDSS Drain-to-Source Leakage Current ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.8 100 -100 ––– V(BR)DSS Drain-to-Source Breakdown Voltage Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance IGSS RG(int) V Conditions VGS = 0V, ID = 250µA m VGS = 10V, ID = 34A  V VDS = VGS, ID = 250µA 20 µA VDS =150 V, VGS = 0V 1.0 mA  VDS =150V,VGS = 0V,TJ =125°C nA VGS = 20V VGS = -20V  Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain (“Miller”) Charge Turn-On Delay Time Rise Time 130 ––– ––– ––– ––– ––– ––– 71 24 21 18 60 ––– 110 td(off) Turn-Off Delay Time ––– 25 ––– tf Ciss Coss Fall Time Input Capacitance Output Capacitance ––– ––– ––– 35 4460 390 ––– ––– ––– Crss Reverse Transfer Capacitance ––– 82 ––– ––– VDS = 25V, ID =50A ID = 50A nC   VDS = 75V VGS = 10V VDD = 98V ID = 50A ns RG= 2.5 VGS = 10V S   VGS = 0V pF   VDS = 50V ƒ = 1.0MHz –––   Diode Characteristics   Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– 86 ––– ––– 343 VSD Diode Forward Voltage ––– ––– 1.3 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ––– ––– ––– 89 300 6.5 130 450 ––– ns nC A IS ISM A Conditions MOSFET symbol showing the integral reverse p-n junction diode. D G S TJ = 25°C,IS = 50A,VGS = 0V  IF = 50A, VDD = 128V di/dt = 100A/µs  Notes:  Repetitive rating; pulse width limited by max. junction temperature.  Limited by Tjmax, starting TJ = 25°C, L = 0.096mH, RG = 25, IAS = 50A, VGS =10V. Part not recommended for use above this value.  Pulse width 400µs; duty cycle  2%.  Ris measured at TJ approximately 90°C 2 www.irf.com © 2013 International Rectifier June 14, 2013 IRFS4321-7PPbF   1000 1000 VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 100 BOTTOM 10 1 5.0V  60µs PULSE WIDTH Tj = 25°C 1 10 100 BOTTOM 5.0V 10  60µs PULSE WIDTH Tj = 175°C 1 0.1 0.1 0.1 100 1000 100 3.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current) 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 TJ = 175°C 10 TJ = 25°C 1 VDS = 25V  60µs PULSE WIDTH 0.1 3.0 4.0 5.0 6.0 7.0 8.0 ID = 50A VGS = 10V 3.0 2.5 2.0 1.5 1.0 0.5 9.0 -60 -40 -20 VGS, Gate-to-Source Voltage (V) 7000 VGS, Gate-to-Source Voltage (V) Coss = Cds + Cgd 5000 Ciss 4000 3000 Coss 2000 1000 Crss 10 100 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage www.irf.com ID= 50A VDS = 120V 16 VDS= 75V VDS= 30V 12 8 4 0 0 1 20 40 60 80 100 120 140 160 180 Fig 4. Normalized On-Resistance vs. Temperature 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 6000 0 TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics C, Capacitance (pF) 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 3 VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP © 2013 International Rectifier 0 20 40 60 80 100 120 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage June 14, 2013 IRFS4321-7PPbF   1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 100 TJ = 175°C 10 TJ = 25°C 1 OPERATION IN THIS AREA LIMITED BY R DS (on) 100µsec 100 1msec 10 10msec 1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1 1.4 90 80 ID, Drain Current (A) 70 60 50 40 30 20 10 0 50 75 100 125 150 1000 190 180 170 160 150 140 -60 -40 -20 175 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) TC , Case Temperature (°C) Fig 10. Drain-to–Source Breakdown Voltage Fig 9. Maximum Drain Current vs. Case Temperature 500 EAS, Single Pulse Avalanche Energy (mJ) 5.0 4.0 Energy (µJ) 100 Fig 8. Maximum Safe Operating Area V(BR)DSS , Drain-to-Source Breakdown Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 25 10 VDS , Drain-toSource Voltage (V) VSD , Source-to-Drain Voltage (V) 3.0 2.0 1.0 I D 13A 20A BOTTOM 50A TOP 400 300 200 100 0 0.0 0 20 40 60 80 100 120 140 160 VDS, Drain-to-Source Voltage (V) Fig 11. Typical Coss Stored Energy 4 DC www.irf.com © 2013 International Rectifier 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) Fig 12. Maximum Avalanche Energy Vs. Drain Current June 14, 2013 IRFS4321-7PPbF   Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 J 0.02 0.01 0.01 R1 R1 J 1 R2 R2 2 1 R3 R3 2 3 3 Ci= iRi Ci= iRi SINGLE PULSE ( THERMAL RESPONSE ) Ri (°C/W) C  (sec) 0.085239 0.000052 0.18817 0.00098 0.176912 0.008365 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming  Tj = 150°C and Tstart =25°C (Single Pulse) Duty Cycle = Single Pulse Avalanche Current (A) 0.01 10 0.05 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming  j = 25°C and Tstart = 150°C. 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs. Pulse width EAR , Avalanche Energy (mJ) 120 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 50A 100 80 60 40 20 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav   Fig 15. Maximum Avalanche Energy vs. Temperature 5 www.irf.com © 2013 International Rectifier June 14, 2013 IRFS4321-7PPbF   40 ID = 1.0A ID = 1.0mA 5.0 ID = 250µA 30 IRRM - (A) VGS(th), Gate threshold Voltage (V) 6.0 4.0 3.0 20 IF = 33A VR = 128V 10 2.0 TJ = 125°C TJ = 25°C 0 1.0 -75 -50 -25 0 25 50 75 100 200 300 400 500 600 700 800 900 1000 100 125 150 175 dif / dt - (A / µs) TJ , Temperature ( °C ) Fig 17. Typical Recovery Current vs. dif/dt Fig 16. Threshold Voltage vs. Temperature 3200 40 2800 2400 QRR - (nC) IRRM - (A) 30 20 IF = 50A VR = 128V 10 1600 1200 IF = 33A VR = 128V 800 TJ = 125°C TJ = 25°C 0 2000 TJ = 125°C TJ = 25°C 400 0 100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000 dif / dt - (A / µs) dif / dt - (A / µs) Fig 18. Typical Recovery Current vs. dif/dt Fig 19. Typical Stored Charge vs. dif/dt 3200 2800 QRR - (nC) 2400 2000 1600 1200 IF = 50A VR = 128V 800 TJ = 125°C TJ = 25°C 400 0 100 200 300 400 500 600 700 800 900 1000 dif / dt - (A / µs) Fig 20. Typical Stored Charge vs. dif/dt 6 www.irf.com © 2013 International Rectifier June 14, 2013 IRFS4321-7PPbF   Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A I AS 0.01 Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 24a. Gate Charge Test Circuit 7 www.irf.com © 2013 International Rectifier Qgd Qgodr Fig 24b. Gate Charge Waveform June 14, 2013 IRFS4321-7PPbF   D2Pak-7Pin Package Outline (Dimensions are shown in millimeters (inches)) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2013 International Rectifier June 14, 2013 IRFS4321-7PPbF   D2Pak-7Pin Part Marking Information D2Pak-7Pin Tape and Reel Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2013 International Rectifier June 14, 2013 IRFS4321-7PPbF   Qualification Information†   Industrial Qualification Level   (per JEDEC JESD47F) †† Moisture Sensitivity Level D2Pak-7Pin MSL1 Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 10 www.irf.com © 2013 International Rectifier June 14, 2013 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 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