PD - 97771
IRFS4510PbF
IRFSL4510PbF
HEXFET® Power MOSFET
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
D
G
S
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
100V
11.3mΩ
13.9mΩ
61A
D
D
G
D
S
G
D2Pak
IRFS4510PbF
D
S
TO-262
IRFSL4510PbF
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
61
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
43
IDM
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
140
W
Linear Derating Factor
0.95
VGS
Gate-to-Source Voltage
± 20
W/°C
V
dv/dt
TJ
Operating Junction and
TSTG
Storage Temperature Range
c
Peak Diode Recovery
A
250
e
3.2
V/ns
°C
-55 to + 175
300
Soldering Temperature, for 10 seconds
(1.6mm from case)
x
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
f
x
10lb in (1.1N m)
Mounting torque, 6-32 or M3 screw
d
130
mJ
See Fig. 14, 15, 22a, 22b,
A
mJ
Thermal Resistance
Parameter
RθJC
RθJA
www.irf.com
i
Junction-to-Case
Junction-to-Ambient
ij
Typ.
Max.
Units
–––
–––
1.05
40
°C/W
1
4/10/12
IRFS/SL4510PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
RG
Min. Typ. Max. Units
100
–––
–––
2.0
–––
–––
–––
–––
–––
–––
0.11
11.3
–––
–––
–––
–––
–––
0.6
–––
–––
13.9
4.0
20
250
100
-100
–––
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 5mA
mΩ VGS = 10V, ID = 37A
V VDS = VGS, ID = 100μA
μA VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
Ω
c
f
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Parameter
Min. Typ. Max. Units
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
g
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
h
–––
58
14
18
40
13
32
28
28
3180
220
120
260
325
–––
87
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
Conditions
VDS = 25V, ID = 37A
ID = 37A
VDS =50V
VGS = 10V
ID = 37A, VDS =0V, VGS = 10V
VDD = 65V
ID = 37A
RG =2.7Ω
VGS = 10V
VGS = 0V
VDS = 50V
ƒ = 1.0MHz, See Fig.5
VGS = 0V, VDS = 0V to 80V , See Fig.11
VGS = 0V, VDS = 0V to 80V
f
ns
pF
f
f
h
g
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
61
A
MOSFET symbol
ISM
(Body Diode)
Pulsed Source Current
–––
–––
250
A
showing the
integral reverse
VSD
trr
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
c
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.192mH
RG = 25Ω, IAS = 37A, VGS =10V. Part not recommended for use
above this value.
ISD ≤ 37A, di/dt ≤ 1550A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
D
G
p-n junction diode.
TJ = 25°C, IS = 37A, VGS = 0V
TJ = 25°C
VR = 85V,
TJ = 125°C
IF = 37A
di/dt = 100A/μs
TJ = 25°C
S
f
––– –––
1.3
V
–––
54
81
ns
–––
60
90
–––
95
140
nC
TJ = 125°C
––– 130 195
–––
3.3
–––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
f
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS .
Rθ is measured at TJ approximately 90°C.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
www.irf.com
IRFS/SL4510PbF
1000
1000
100
BOTTOM
10
1
4.0V
≤ 60μs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
BOTTOM
4.0V
10
≤ 60μs PULSE WIDTH
Tj = 175°C
1
100
0.1
VDS , Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1000
ID, Drain-to-Source Current(Α)
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
TJ = 175°C
10
TJ = 25°C
1
VDS = 50V
≤ 60μs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
ID = 37A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
0.0
7.0
-60 -40 -20 0
VGS, Gate-to-Source Voltage (V)
100000
Fig 4. Normalized On-Resistance vs. Temperature
14
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
C, Capacitance (pF)
VGS
15V
10V
6.0V
5.0V
4.8V
4.5V
4.3V
4.0V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
6.0V
5.0V
4.8V
4.5V
4.3V
4.0V
Ciss
1000
Coss
Crss
100
ID= 37A
VDS = 80V
VDS = 50V
12
10
VDS = 20V
8
6
4
2
0
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com
0
20
40
60
80
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
IRFS/SL4510PbF
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
TJ = 175°C
10
TJ = 25°C
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
1msec
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
1.6
ID, Drain Current (A)
60
50
40
30
20
10
0
75
100
125
150
175
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
70
50
100
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
25
10
VDS, Drain-toSource Voltage (V)
VSD, Source-to-Drain Voltage (V)
125
Id = 5mA
120
115
110
105
100
95
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
600
EAS , Single Pulse Avalanche Energy (mJ)
1.2
1.0
0.8
Energy (μJ)
DC
0.1
0.1
0.6
0.4
0.2
0.0
0
20
40
60
80
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
100μsec
100
ID
4.7A
12A
BOTTOM 37A
500
TOP
400
300
200
100
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
www.irf.com
IRFS/SL4510PbF
Thermal Response ( ZthJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
0.01
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
140
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 37A
120
100
80
60
40
20
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
www.irf.com
5
4.5
24
4.0
20
3.5
16
IRRM - (A)
VGS(th), Gate threshold Voltage (V)
IRFS/SL4510PbF
3.0
2.5
2.0
1.5
8
ID = 100μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
IF = 24A
VR = 80V
4
TJ = 125°C
TJ = 25°C
0
1.0
-75 -50 -25 0
100 200 300 400 500 600 700 800 900 1000
25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
dif / dt - (A / μs)
Fig 16. Threshold Voltage vs. Temperature
Fig. 17 - Typical Recovery Current vs. dif/dt
24
600
20
500
16
400
QRR - (nC)
IRRM - (A)
12
12
8
4
0
300
200
IF = 37A
VR = 80V
IF = 24A
VR = 80V
100
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
dif / dt - (A / μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
600
500
QRR - (nC)
400
300
200
100
0
IF = 37A
VR = 80V
TJ = 125°C
TJ = 25°C
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
6
Fig. 20 - Typical Stored Charge vs. dif/dt
www.irf.com
IRFS/SL4510PbF
D.U.T
Driver Gate Drive
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
tp
A
I AS
0.01Ω
Fig 22a. Unclamped Inductive Test Circuit
Fig 22b. Unclamped Inductive Waveforms
LD
VDS
VDS
90%
+
VDD D.U.T
10%
VGS
VGS
Second Pulse Width < 1μs
Duty Factor < 0.1%
td(on)
Fig 23a. Switching Time Test Circuit
tr
td(off)
tf
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
L
DUT
0
20K
1K
VCC
Vgs(th)
S
Qgodr
Fig 24a. Gate Charge Test Circuit
www.irf.com
Qgd
Qgs2 Qgs1
Fig 24b. Gate Charge Waveform
7
IRFS/SL4510PbF
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
T HIS IS AN IRF530S WIT H
LOT CODE 8024
AS S EMBLED ON WW 02, 2000
IN T HE AS S EMBLY LINE "L"
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
F530S
DAT E CODE
YEAR 0 = 2000
WEEK 02
LINE L
AS S EMBLY
LOT CODE
OR
INT ERNAT IONAL
RECT IF IER
LOGO
AS SEMBLY
LOT CODE
PART NUMBER
F 530S
DAT E CODE
P = DES IGNAT ES LEAD - F REE
PRODUCT (OPT IONAL)
YEAR 0 = 2000
WEEK 02
A = AS SEMBLY S IT E CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
www.irf.com
IRFS/SL4510PbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L
LOT CODE 1789
AS S EMBLED ON WW 19, 1997
IN THE AS S EMBLY LINE "C"
PART NUMBER
INT ERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 7 = 1997
WEEK 19
LINE C
AS S EMBLY
LOT CODE
OR
INT ERNAT IONAL
RECT IFIER
LOGO
AS S EMBLY
LOT CODE
PART NUMBER
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
WEEK 19
A = ASS EMBLY S IT E CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
IRFS/SL4510PbF
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 101N Sepulveda., El Segundo, California 90245, USA Tel: (310) 2527105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/2012
10
www.irf.com
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
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